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Citations per year
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Cited by
All
Since 2019
Citations
78
78
h-index
3
3
i10-index
3
3
0
38
19
2021
2022
2023
2024
3
32
38
5
Follow
Farzaneh Izadinasab
Unknown affiliation
Verified email at nit.ac.ir
Electrical & Electronics Engineering - VLSI - Low Power VLSI Design
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Year
A reliable low standby power 10T SRAM cell with expanded static noise margins
E Abbasian, F Izadinasab, M Gholipour
IEEE Transactions on Circuits and Systems I: Regular Papers 69 (4), 1606-1616
, 2022
45
2022
Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design
E Abbasian, M Gholipour, F Izadinasab
International Journal of Circuit Theory and Applications 49 (11), 3630-3652
, 2021
20
2021
Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technology
F Izadinasab, M Gholipour
Microelectronics Journal 113, 105100
, 2021
13
2021
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