Mark Buckwell
Mark Buckwell
Research Fellow, University College London
Verified email at ee.ucl.ac.uk - Homepage
Title
Cited by
Cited by
Year
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
1362019
Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory
A Mehonic, M Buckwell, L Montesi, L Garnett, S Hudziak, S Fearn, ...
Journal of Applied Physics 117 (12), 124505, 2015
722015
Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM
M Buckwell, L Montesi, S Hudziak, A Mehonic, AJ Kenyon
Nanoscale 7 (43), 18030-18035, 2015
482015
Nanoscale Transformations in Metastable, Amorphous, Silicon‐Rich Silica
A Mehonic, M Buckwell, L Montesi, MS Munde, D Gao, S Hudziak, ...
Advanced Materials 28 (34), 7486-7493, 2016
382016
Intrinsic resistance switching in amorphous silicon oxide for high performance SiOx ReRAM devices
A Mehonic, MS Munde, WH Ng, M Buckwell, L Montesi, M Bosman, ...
Microelectronic Engineering 178, 98-103, 2017
342017
Intrinsic resistance switching in amorphous silicon suboxides: the role of columnar microstructure
MS Munde, A Mehonic, WH Ng, M Buckwell, L Montesi, M Bosman, ...
Scientific reports 7 (1), 1-7, 2017
272017
Microscopic and spectroscopic analysis of the nature of conductivity changes during resistive switching in silicon‐rich silicon oxide
M Buckwell, L Montesi, A Mehonic, O Reza, L Garnett, M Munde, ...
physica status solidi (c) 12 (1‐2), 211-217, 2015
202015
Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices
Y Yang, Y Takahashi, A Tsurumaki-Fukuchi, M Arita, M Moors, M Buckwell, ...
Journal of Electroceramics 39 (1-4), 73-93, 2017
162017
Investigation of resistance switching in SiO x RRAM cells using a 3D multi-scale kinetic Monte Carlo simulator
T Sadi, A Mehonic, L Montesi, M Buckwell, A Kenyon, A Asenov
Journal of Physics: Condensed Matter 30 (8), 084005, 2018
152018
Nanosecond analog programming of substoichiometric silicon oxide resistive RAM
L Montesi, M Buckwell, K Zarudnyi, L Garnett, S Hudziak, A Mehonic, ...
IEEE Transactions on Nanotechnology 15 (3), 428-434, 2016
152016
Advanced physical modeling of SiOx resistive random access memories
T Sadi, L Wang, D Gao, A Mehonic, L Montesi, M Buckwell, A Kenyon, ...
2016 International Conference on Simulation of Semiconductor Processes and†…, 2016
122016
Simulation of inference accuracy using realistic rram devices
A Mehonic, D Joksas, WH Ng, M Buckwell, AJ Kenyon
Frontiers in neuroscience 13, 593, 2019
112019
Spike-timing dependent plasticity in unipolar silicon oxide rram devices
K Zarudnyi, A Mehonic, L Montesi, M Buckwell, S Hudziak, AJ Kenyon
Frontiers in neuroscience 12, 57, 2018
112018
unpublished
S Chen, L Jiang, M Buckwell, X Jing, Y Ji, E Grustan‐Gutierrez, F Hui, ...
WM Chen and B. Monemar, to be published, 1985
101985
On the limits of scalpel AFM for the 3D electrical characterization of nanomaterials
S Chen, L Jiang, M Buckwell, X Jing, Y Ji, E Grustan‐Gutierrez, F Hui, ...
Advanced Functional Materials 28 (52), 1802266, 2018
82018
High-performance resistance switching memory devices using spin-on silicon oxide
WH Ng, A Mehonic, M Buckwell, L Montesi, AJ Kenyon
IEEE Transactions on Nanotechnology 17 (5), 884-888, 2018
82018
Silica: Nanoscale Transformations in Metastable, Amorphous, Silicon‐Rich Silica (Adv. Mater. 34/2016)
A Mehonic, M Buckwell, L Montesi, MS Munde, D Gao, S Hudziak, ...
Advanced Materials 28 (34), 7549-7549, 2016
82016
Conductive AFM topography of intrinsic conductivity variations in silica based dielectrics for memory applications
M Buckwell, K Zarudnyi, L Montesi, WH Ng, S Hudziak, A Mehonic, ...
ECS Transactions 75 (5), 3, 2016
72016
The interplay between structure and function in redox-based resistance switching
AJ Kenyon, MS Munde, WH Ng, M Buckwell, D Joksas, A Mehonic
Faraday discussions 213, 151-163, 2019
62019
In situ transmission electron microscopy of resistive switching in thin silicon oxide layers
M Duchamp, V Migunov, AH Tavabi, A Mehonic, M Buckwell, M Munde, ...
Resolution and Discovery 1 (1), 27-33, 2016
62016
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Articles 1–20