Alexandre Pofelski
Alexandre Pofelski
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14nm FDSOI technology for high speed and energy efficient applications
O Weber, E Josse, F Andrieu, A Cros, E Richard, P Perreau, E Baylac, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics
S Zhao, SY Woo, SM Sadaf, Y Wu, A Pofelski, DA Laleyan, RT Rashid, ...
Apl Materials 4 (8), 086115, 2016
Photochemical carbon dioxide reduction on Mg-doped Ga (In) N nanowire arrays under visible light irradiation
B AlOtaibi, X Kong, S Vanka, SY Woo, A Pofelski, F Oudjedi, S Fan, ...
ACS Energy Letters 1 (1), 246-252, 2016
Selective area epitaxy of AlGaN nanowire arrays across nearly the entire compositional range for deep ultraviolet photonics
X Liu, BH Le, SY Woo, S Zhao, A Pofelski, GA Botton, Z Mi
Optics express 25 (24), 30494-30502, 2017
UTBB FDSOI scaling enablers for the 10nm node
L Grenouillet, Q Liu, R Wacquez, P Morin, N Loubet, D Cooper, A Pofelski, ...
2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2013
A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies
B DeSalvo, P Morin, M Pala, G Ghibaudo, O Rozeau, Q Liu, A Pofelski, ...
2014 IEEE International Electron Devices Meeting, 7.2. 1-7.2. 4, 2014
2D strain mapping using scanning transmission electron microscopy Moiré interferometry and geometrical phase analysis
A Pofelski, SY Woo, BH Le, X Liu, S Zhao, Z Mi, S Löffler, GA Botton
Ultramicroscopy 187, 1-12, 2018
Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs
F Andrieu, M Casse, E Baylac, P Perreau, O Nier, D Rideau, R Berthelon, ...
2014 44th European Solid State Device Research Conference (ESSDERC), 106-109, 2014
A review of the mechanical stressors efficiency applied to the ultra-thin body & buried oxide fully depleted silicon on insulator technology
P Morin, S Maitrejean, F Allibert, E Augendre, Q Liu, N Loubet, ...
Solid-State Electronics 117, 100-116, 2016
Design/technology co-optimization of strain-induced layout effects in 14nm UTBB-FDSOI CMOS: Enablement and assessment of continuous-RX designs
R Berthelon, F Andrieu, E Josse, R Bingert, O Weber, E Serret, A Aurand, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
Innovative through-Si 3D lithography for ultimate self-aligned planar Double-Gate and Gate-All-Around nanowire transistors
R Coquand, S Monfray, S Barraud, MP Samson, C Arvet, J Pradelles, ...
2013 Symposium on VLSI Technology, T226-T227, 2013
APL Mater. 4, 086115 (2016)
S Zhao, SY Woo, SM Sadaf, Y Wu, A Pofelski, DA Laleyan, RT Rashid, ...
this citation, the temperature is thermal couple reading. The real …, 0
The performance evaluation of direct detection electron energy-loss spectroscopy at 200 kV and 80 kV accelerating voltages
S Cheng, A Pofelski, P Longo, RD Twesten, Y Zhu, GA Botton
Ultramicroscopy 212, 112942, 2020
Sampling optimization of Moire geometrical phase analysis for strain characterization in scanning transmission electron microscopy
A Pofelski, S Ghanad-Tavakoli, DA Thompson, GA Botton
Ultramicroscopy 209, 112858, 2020
Advanced TEM Characterization for the Development of 28-14nm nodes based on fully-depleted Silicon-on-Insulator Technology
G Servanton, L Clement, K Lepinay, F Lorut, R Pantel, A Pofelski, N Bicais
Journal of Physics: Conference Series 471 (1), 012026, 2013
Impact of laser anneal on NiPt silicide texture and chemical composition
C Feautrier, AS Ozcan, C Lavoie, A Valery, R Beneyton, C Borowiak, ...
Journal of Applied Physics 121 (22), 225109, 2017
Dealing With Multiple Grains in TEM Lamellae Thickness for Microstructure Analysis Using Scanning Precession Electron Diffraction
A Valery, EF Rauch, A Pofelski, L Clement, F Lorut
Microscopy and Microanalysis 21 (S3), 1243-1244, 2015
Ge Condensation Using Rapid Thermal Oxidation for SGOI Substrate Preparation
O Gourhant, C Pribat, D Barge, V Mazzocchi, F Andrieu, F Abbate, ...
ECS Transactions 64 (6), 469, 2014
Macroscopic and nanometer scale stress measurement of Ni (Pt) Si silicide: Impact of thermal treatments ranging from millisecond to several hours
PF Morin, R Beneyton, M Gregoire, A Pofelski, L Clement, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2014
Mechanical analyses of extended and localized UTBB stressors formed with Ge enrichment techniques
PF Morin, L Grenouillet, N Loubet, A Pofelski, D Lu, Q Liu, E Augendre, ...
ECS Transactions 66 (4), 57, 2015
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