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David Esseni
David Esseni
University of Udine
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Year
Electromechanical piezoresistive sensing in suspended graphene membranes
AD Smith, F Niklaus, A Paussa, S Vaziri, AC Fischer, M Sterner, ...
Nano letters 13 (7), 3237-3242, 2013
4252013
Nanoscale MOS transistors: semi-classical transport and applications
D Esseni, P Palestri, L Selmi
Cambridge University Press, 2011
2692011
Inverters with strained Si nanowire complementary tunnel field-effect transistors
L Knoll, QT Zhao, A Nichau, S Trellenkamp, S Richter, A Schäfer, ...
IEEE electron device letters 34 (6), 813-815, 2013
2202013
Physically based modeling of low field electron mobility in ultrathin single-and double-gate SOI n-MOSFETs
D Esseni, A Abramo, L Selmi, E Sangiorgi
IEEE transactions on electron devices 50 (12), 2445-2455, 2003
2012003
Understanding quasi-ballistic transport in nano-MOSFETs: part I-scattering in the channel and in the drain
P Palestri, D Esseni, S Eminente, C Fiegna, E Sangiorgi, L Selmi
IEEE Transactions on Electron Devices 52 (12), 2727-2735, 2005
1882005
Two-dimensional heterojunction interlayer tunneling field effect transistors (thin-TFETs)
MO Li, D Esseni, JJ Nahas, D Jena, HG Xing
IEEE Journal of the Electron Devices Society 3 (3), 200-207, 2015
1582015
Modeling of electron mobility degradation by remote Coulomb scattering in ultrathin oxide MOSFETs
D Esseni, A Abramo
IEEE Transactions on Electron Devices 50 (7), 1665-1674, 2003
1542003
Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application
D Esseni, M Mastrapasqua, GK Celler, C Fiegna, L Selmi, E Sangiorgi
IEEE Transactions on Electron Devices 48 (12), 2842-2850, 2001
1502001
Multisubband Monte Carlo study of transport, quantization, and electron-gas degeneration in ultrathin SOI n-MOSFETs
L Lucci, P Palestri, D Esseni, L Bergagnini, L Selmi
IEEE transactions on electron devices 54 (5), 1156-1164, 2007
147*2007
Piezoresistive properties of suspended graphene membranes under uniaxial and biaxial strain in nanoelectromechanical pressure sensors
AD Smith, F Niklaus, A Paussa, S Schröder, AC Fischer, M Sterner, ...
ACS nano 10 (11), 9879-9886, 2016
1392016
Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor
MO Li, D Esseni, G Snider, D Jena, H Grace Xing
Journal of Applied Physics 115 (7), 2014
1392014
An experimental study of mobility enhancement in ultrathin SOI transistors operated in double-gate mode
D Esseni, M Mastrapasqua, GK Celler, C Fiegna, L Selmi, E Sangiorgi
IEEE Transactions on Electron Devices 50 (3), 802-808, 2003
1392003
Universal analytic model for tunnel FET circuit simulation
H Lu, D Esseni, A Seabaugh
Solid-State Electronics 108, 110-117, 2015
135*2015
On the modeling of surface roughness limited mobility in SOI MOSFETs and its correlation to the transistor effective field
D Esseni
IEEE Transactions on Electron Devices 51 (3), 394-401, 2004
1342004
Strain-induced performance improvements in InAs nanowire tunnel FETs
F Conzatti, MG Pala, D Esseni, E Bano, L Selmi
IEEE transactions on electron devices 59 (8), 2085-2092, 2012
1132012
Investigation of the transport properties of silicon nanowires using deterministic and Monte Carlo approaches to the solution of the Boltzmann transport equation
M Lenzi, P Palestri, E Gnani, S Reggiani, A Gnudi, D Esseni, L Selmi, ...
IEEE Transactions on Electron Devices 55 (8), 2086-2096, 2008
1112008
Trading-off programming speed and current absorption in flash memories with the ramped-gate programming technique
D Esseni, C Villa, S Tassan, B Ricco
Ieee Transactions on Electron Devices 47 (4), 828-834, 2000
1052000
Leakage–delay tradeoff in FinFET logic circuits: A comparative analysis with bulk technology
M Agostinelli, M Alioto, D Esseni, L Selmi
IEEE Transactions on very large scale integration (VLSI) systems 18 (2), 232-245, 2009
1042009
A TCAD-based methodology to model the site-binding charge at ISFET/electrolyte interfaces
A Bandiziol, P Palestri, F Pittino, D Esseni, L Selmi
IEEE Transactions on Electron Devices 62 (10), 3379-3386, 2015
1022015
Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX2(, W;, Se)
M Hosseini, M Elahi, M Pourfath, D Esseni
IEEE Transactions on Electron Devices 62 (10), 3192-3198, 2015
1022015
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Articles 1–20