| What a difference a bond makes: the structural, chemical, and physical properties of methyl-terminated Si (111) surfaces KT Wong, NS Lewis Accounts of chemical research 47 (10), 3037-3044, 2014 | 104 | 2014 |
| Periodic trends in organic functionalization of group IV semiconductor surfaces JS Kachian, KT Wong, SF Bent Accounts of chemical research 43 (2), 346-355, 2010 | 102 | 2010 |
| Self-assembled monolayer blocking with intermittent air-water exposure T Kaufman-Osborn, KT WONG US Patent 10,192,752, 2019 | 57 | 2019 |
| Modular device and method for moving fluids to and from a sample delivery element J Ramunas, JG Santiago, HM Blau, KT Wong, V Shkolnikov, K Stahl, ... US Patent App. 12/802,063, 2010 | 53 | 2010 |
| Gas delivery system for high pressure processing chamber AM Khan, Q Liang, S Malik, KT WONG, SD Nemani US Patent 10,179,941, 2019 | 26 | 2019 |
| Reaction of Hydroquinone and p-Benzoquinone with the Ge(100)-2 × 1 Surface B Shong, KT Wong, SF Bent The Journal of Physical Chemistry C 116 (7), 4705-4713, 2012 | 24 | 2012 |
| High pressure wafer processing systems and related methods Q Liang, SD Nemani, AM Khan, VR Kasibhotla, S Malik, S Kang, KT Wong US Patent 10,224,224, 2018 | 23 | 2018 |
| Synthesis and characterization of atomically flat methyl-terminated Ge (111) surfaces KT Wong, YG Kim, MP Soriaga, BS Brunschwig, NS Lewis Journal of the American Chemical Society 137 (28), 9006-9014, 2015 | 22 | 2015 |
| Single versus Dual Attachment in the Adsorption of Diisocyanates at the Ge (100)-2× 1 Surface KT Wong, SN Chopra, SF Bent The Journal of Physical Chemistry C 116 (23), 12670-12679, 2012 | 22 | 2012 |
| High pressure treatment of silicon nitride film KT Wong, S Kang, SD Nemani, EY Yieh US Patent 10,847,360, 2020 | 21 | 2020 |
| Reaction of Phenyl Isocyanate and Phenyl Isothiocyanate with the Ge (100)-2× 1 Surface PW Loscutoff, KT Wong, SF Bent The Journal of Physical Chemistry C 114 (33), 14193-14201, 2010 | 21 | 2010 |
| Methods for fabricating nanowire for semiconductor applications KT WONG, S Sun, SS Kang, NS Kim, SD Nemani, EY Yieh US Patent 10,269,571, 2019 | 20 | 2019 |
| Low interface trap density in scaled bilayer gate oxides on 2D materials via nanofog low temperature atomic layer deposition I Kwak, M Kavrik, JH Park, L Grissom, B Fruhberger, KT Wong, S Kang, ... Applied Surface Science 463, 758-766, 2019 | 19 | 2019 |
| Selective oxidation for 3D device isolation S Sun, KT Wong, K Leschkies, KIM Namsung, S Nemani US Patent 10,790,183, 2020 | 17 | 2020 |
| High pressure wafer processing systems and related methods Q Liang, SD Nemani, AM Khan, VR Kasibhotla, S Malik, S Kang, KT Wong US Patent 10,529,603, 2020 | 16 | 2020 |
| Strong Carbon-Surface Dative Bond Formation by tert-Butyl Isocyanide on the Ge(100)-2 × 1 Surface B Shong, KT Wong, SF Bent Journal of the American Chemical Society 136 (16), 5848-5851, 2014 | 16 | 2014 |
| Tungsten defluorination by high pressure treatment KT Wong, TJ Kwon, S Kang, EY Yieh US Patent 10,622,214, 2020 | 15 | 2020 |
| Adsorption of Structural and Stereoisomers of Cyclohexanediamine at the Ge (100)-2× 1 Surface: Geometric Effects in Adsorption on a Semiconductor Surface KT Wong, SF Bent The Journal of Physical Chemistry C 117 (37), 19063-19073, 2013 | 15 | 2013 |
| Highly selective atomic layer deposition of MoSiOx using inherently substrate-dependent processes JY Choi, CF Ahles, KT Wong, S Nemani, E Yieh, AC Kummel Applied Surface Science 512, 144307, 2020 | 13 | 2020 |
| Reaction of tert-butyl isocyanate and tert-butyl isothiocyanate at the Ge (100)− 2× 1 Surface PW Loscutoff, KT Wong, SF Bent Surface Science 604 (19-20), 1791-1799, 2010 | 13 | 2010 |
