Greg Hughes
Greg Hughes
Prof of Physics, Dublin City University, Dublin, Ireland
Verified email at - Homepage
Cited by
Cited by
GaAs interfacial self-cleaning by atomic layer deposition
CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ...
Applied Physics Letters 92 (7), 2008
Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning
CL Hinkle, M Milojevic, B Brennan, AM Sonnet, FS Aguirre-Tostado, ...
Applied Physics Letters 94 (16), 2009
Observation of a C- Core Exciton in Diamond
JF Morar, FJ Himpsel, G Hollinger, G Hughes, JL Jordan
Physical review letters 54 (17), 1960, 1985
C 1s excitation studies of diamond (111). I. Surface core levels
JF Morar, FJ Himpsel, G Hollinger, JL Jordan, G Hughes, FR McFeely
Physical Review B 33 (2), 1340, 1986
Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2
G Mirabelli, C McGeough, M Schmidt, EK McCarthy, S Monaghan, ...
Journal of Applied Physics 120 (12), 2016
A dose-ranging study of the oral direct thrombin inhibitor, ximelagatran, and its subcutaneous form, melagatran, compared with dalteparin in the prophylaxis of thromboembolism …
BI Eriksson, AC Arfwidsson, L Frison, UG Eriksson, A Bylock, P Kälebo, ...
Thrombosis and haemostasis 87 (02), 231-237, 2002
A systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As …
É O’Connor, B Brennan, V Djara, K Cherkaoui, S Monaghan, ...
Journal of Applied Physics 109 (2), 2011
An X-ray photoelectron spectroscopy study of the HF etching of native oxides on Ge (111) and Ge (100) surfaces
T Deegan, G Hughes
Applied surface science 123, 66-70, 1998
C 1s excitation studies of diamond (111). II. Unoccupied surface states
JF Morar, FJ Himpsel, G Hollinger, JL Jordon, G Hughes, FR McFeely
Physical Review B 33 (2), 1346, 1986
Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation
CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ...
Applied Physics Letters 91 (16), 2007
Si (111) surface oxidation: O 1s core-level study using synchrotron radiation
G Hollinger, JF Morar, FJ Himpsel, G Hughes, JL Jordan
Surface Science 168 (1-3), 609-616, 1986
Optimisation of the ammonium sulphide (NH4) 2S passivation process on In0. 53Ga0. 47As
B Brennan, M Milojevic, CL Hinkle, FS Aguirre-Tostado, G Hughes, ...
Applied surface science 257 (9), 4082-4090, 2011
Photoelectron core-level spectroscopy and scanning-tunneling-microscopy study of the sulfur-treated GaAs (100) surface
P Moriarty, B Murphy, L Roberts, AA Cafolla, G Hughes, L Koenders, ...
Physical Review B 50 (19), 14237, 1994
Identification and thermal stability of the native oxides on InGaAs using synchrotron radiation based photoemission
B Brennan, G Hughes
Journal of Applied Physics 108 (5), 2010
Structure and bonding at the CaF2/Si (111) interface
FJ Himpsel, FU Hillebrecht, G Hughes, JL Jordan, UO Karlsson, ...
Applied physics letters 48 (9), 596-598, 1986
Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation
K Cherkaoui, S Monaghan, MA Negara, M Modreanu, PK Hurley, ...
Journal of Applied Physics 104 (6), 2008
Structural and tribological properties of the plasma nitrided Ti-alloy biomaterials: Influence of the treatment temperature
M Rahman, I Reid, P Duggan, DP Dowling, G Hughes, MSJ Hashmi
Surface and Coatings Technology 201 (9-11), 4865-4872, 2007
Indium stability on InGaAs during atomic H surface cleaning
FS Aguirre-Tostado, M Milojevic, CL Hinkle, EM Vogel, RM Wallace, ...
Applied Physics Letters 92 (17), 2008
In situ H2S passivation of In0. 53Ga0. 47As∕ InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric
E O’Connor, RD Long, K Cherkaoui, KK Thomas, F Chalvet, IM Povey, ...
Applied Physics Letters 92 (2), 2008
Sb/GaAs (110) interface: A reevaluation
F Schäffler, R Ludeke, A Taleb-Ibrahimi, G Hughes, D Rieger
Physical Review B 36 (2), 1328, 1987
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