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| structure based on type-II strained layer superlattices JB Rodriguez, E Plis, G Bishop, YD Sharma, H Kim, LR Dawson, ... Applied Physics Letters 91 (4), 043514, 2007 | 270 | 2007 |
| Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers N Gautam, HS Kim, MN Kutty, E Plis, LR Dawson, S Krishna Applied Physics Letters 96 (23), 231107, 2010 | 151 | 2010 |
| Mid-IR focal plane array based on type-II strain layer superlattice detector with design HS Kim, E Plis, JB Rodriguez, GD Bishop, YD Sharma, LR Dawson, ... Applied Physics Letters 92 (18), 183502, 2008 | 133 | 2008 |
| Bias dependent dual band response from type II strain layer superlattice detectors A Khoshakhlagh, JB Rodriguez, E Plis, GD Bishop, YD Sharma, HS Kim, ... Applied Physics Letters 91 (26), 263504, 2007 | 110 | 2007 |
| III–V complementary metal–oxide–semiconductor electronics on silicon substrates J Nah, H Fang, C Wang, K Takei, MH Lee, E Plis, S Krishna, A Javey Nano letters 12 (7), 3592-3595, 2012 | 100 | 2012 |
| Ultrathin body InAs tunneling field-effect transistors on Si substrates AC Ford, CW Yeung, S Chuang, HS Kim, E Plis, S Krishna, C Hu, A Javey Applied Physics Letters 98 (11), 113105, 2011 | 95 | 2011 |
| Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors K Takei, M Madsen, H Fang, R Kapadia, S Chuang, HS Kim, CH Liu, ... Nano letters 12 (4), 2060-2066, 2012 | 94 | 2012 |
| Quantum confinement effects in nanoscale-thickness InAs membranes K Takei, H Fang, SB Kumar, R Kapadia, Q Gao, M Madsen, HS Kim, ... Nano letters 11 (11), 5008-5012, 2011 | 93 | 2011 |
| InAs/GaSb type-II superlattice detectors EA Plis Advances in Electronics 2014, 2014 | 89 | 2014 |
| Self-aligned, extremely high frequency III–V metal-oxide-semiconductor field-effect transistors on rigid and flexible substrates C Wang, JC Chien, H Fang, K Takei, J Nah, E Plis, S Krishna, ... Nano letters 12 (8), 4140-4145, 2012 | 85 | 2012 |
| Quantum of optical absorption in two-dimensional semiconductors H Fang, HA Bechtel, E Plis, MC Martin, S Krishna, E Yablonovitch, ... Proceedings of the National Academy of Sciences 110 (29), 11688-11691, 2013 | 84 | 2013 |
| Midwave infrared type-II superlattice detectors with mixed interfaces E Plis, S Annamalai, KT Posani, S Krishna, RA Rupani, S Ghosh Journal of Applied Physics 100 (1), 014510, 2006 | 82 | 2006 |
| Performance improvement of InAs/GaSb strained layer superlattice detectors by reducing surface leakage currents with SU-8 passivation HS Kim, E Plis, A Khoshakhlagh, S Myers, N Gautam, YD Sharma, ... Applied Physics Letters 96 (3), 033502, 2010 | 72 | 2010 |
| Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate E Plis, JB Rodriguez, G Balakrishnan, YD Sharma, HS Kim, T Rotter, ... Semiconductor Science and Technology 25 (8), 085010, 2010 | 70 | 2010 |
| Type II strain layer superlattice detectors with polarity E Plis, JB Rodriguez, HS Kim, G Bishop, YD Sharma, LR Dawson, ... Applied Physics Letters 91 (13), 133512, 2007 | 70 | 2007 |
| Passivation techniques for InAs/GaSb strained layer superlattice detectors EA Plis, MN Kutty, S Krishna Laser & Photonics Reviews 7 (1), 45-59, 2013 | 65 | 2013 |
| Modeling of electrical characteristics of midwave type II strain layer superlattice diodes V Gopal, E Plis, JB Rodriguez, CE Jones, L Faraone, S Krishna Journal of Applied Physics 104 (12), 124506, 2008 | 62 | 2008 |
| Reduction of surface leakage current in InAs/GaSb strained layer long wavelength superlattice detectors using SU-8 passivation HS Kim, E Plis, N Gautam, S Myers, Y Sharma, LR Dawson, S Krishna Applied Physics Letters 97 (14), 143512, 2010 | 59 | 2010 |
| InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations D Lackner, M Steger, MLW Thewalt, OJ Pitts, YT Cherng, SP Watkins, ... Journal of Applied Physics 111 (3), 034507, 2012 | 58 | 2012 |
