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Hui Deng (邓辉)
Hui Deng (邓辉)
Associate Professor @ Southern University of Science and Technology
Verified email at sustech.edu.cn - Homepage
Title
Cited by
Cited by
Year
Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface
K Yamamura, T Takiguchi, M Ueda, H Deng, AN Hattori, N Zettsu
CIRP annals 60 (1), 571-574, 2011
2002011
Electro-chemical mechanical polishing of single-crystal SiC using CeO2 slurry
H Deng, K Hosoya, Y Imanishi, K Endo, K Yamamura
Electrochemistry Communications 52, 5-8, 2015
1102015
Atomic-scale flattening mechanism of 4H-SiC (0 0 0 1) in plasma assisted polishing
H Deng, K Yamamura
CIRP Annals 62 (1), 575-578, 2013
892013
Plasma-assisted polishing of gallium nitride to obtain a pit-free and atomically flat surface
H Deng, K Endo, K Yamamura
CIRP Annals 64 (1), 531-534, 2015
612015
Polishing and planarization of single crystal diamonds: state-of-the-art and perspectives
H Luo, KM Ajmal, W Liu, K Yamamura, H Deng
International Journal of Extreme Manufacturing 3 (2), 022003, 2021
532021
Damage-free finishing of CVD-SiC by a combination of dry plasma etching and plasma-assisted polishing
H Deng, K Endo, K Yamamura
International Journal of Machine Tools and Manufacture 115, 38-46, 2017
532017
Competition between surface modification and abrasive polishing: a method of controlling the surface atomic structure of 4H-SiC (0001)
H Deng, K Endo, K Yamamura
Scientific reports 5 (1), 8947, 2015
532015
Optimization of the plasma oxidation and abrasive polishing processes in plasma-assisted polishing for highly effective planarization of 4H-SiC
H Deng, K Monna, T Tabata, K Endo, K Yamamura
CIRP Annals 63 (1), 529-532, 2014
482014
Highly efficient and damage-free polishing of GaN (0 0 0 1) by electrochemical etching-enhanced CMP process
L Zhang, H Deng
Applied Surface Science 514, 145957, 2020
382020
High efficient polishing of sliced 4H-SiC (0001) by molten KOH etching
Y Zhang, H Chen, D Liu, H Deng
Applied Surface Science 525, 146532, 2020
342020
Atomic-scale finishing of carbon face of single crystal SiC by combination of thermal oxidation pretreatment and slurry polishing
H Deng, N Liu, K Endo, K Yamamura
Applied Surface Science 434, 40-48, 2018
332018
Characterization of 4H-SiC (0001) surface processed by plasma-assisted polishing
H Deng, M Ueda, K Yamamura
The International Journal of Advanced Manufacturing Technology 72, 1-7, 2014
312014
Atomic-scale and damage-free polishing of single crystal diamond enhanced by atmospheric pressure inductively coupled plasma
H Luo, KM Ajmal, W Liu, K Yamamura, H Deng
Carbon 182, 175-184, 2021
302021
An efficient approach for atomic-scale polishing of single-crystal silicon via plasma-based atom-selective etching
Z Fang, Y Zhang, R Li, Y Liang, H Deng
International Journal of Machine Tools and Manufacture 159, 103649, 2020
302020
A comprehensive study on electrochemical polishing of tungsten
F Wang, X Zhang, H Deng
Applied Surface Science 475, 587-597, 2019
302019
Oxygen-shielded ultrasonic vibration cutting to suppress the chemical wear of diamond tools
XQ Zhang, H Deng, K Liu
CIRP Annals 68 (1), 69-72, 2019
292019
Damage-free dry polishing of 4H-SiC combined with atmospheric-pressure water vapor plasma oxidation
H Deng, T Takiguchi, M Ueda, AN Hattori, N Zettsu, K Yamamura
Japanese Journal of Applied Physics 50 (8S1), 08JG05, 2011
282011
A generic approach of polishing metals via isotropic electrochemical etching
R Yi, Y Zhang, X Zhang, F Fang, H Deng
International Journal of Machine Tools and Manufacture 150, 103517, 2020
272020
Suppression of diamond tool wear in machining of tungsten carbide by combining ultrasonic vibration and electrochemical processing
X Zhang, R Huang, K Liu, AS Kumar, H Deng
Ceramics International 44 (4), 4142-4153, 2018
262018
Indiscriminate revelation of dislocations in single crystal SiC by inductively coupled plasma etching
Y Zhang, R Li, Y Zhang, D Liu, H Deng
Journal of the European Ceramic Society 39 (9), 2831-2838, 2019
252019
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Articles 1–20