The island-gate varactor—A high-Q MOS varactor for millimeter-wave applications Y Oh, S Kim, S Lee, JS Rieh IEEE microwave and wireless components letters 19 (4), 215-217, 2009 | 20 | 2009 |
A Comprehensive Study of High- Island-Gate Varactors (IGVs) for CMOS Millimeter-Wave Applications Y Oh, JS Rieh IEEE transactions on microwave theory and techniques 59 (6), 1520-1528, 2011 | 15 | 2011 |
A 47 GHz Cross-Coupled VCO Employing High- Island-Gate Varactor for Phase Noise Reduction N Kim, Y Oh, JS Rieh IEEE Microwave and Wireless Components Letters 20 (2), 94-96, 2010 | 15 | 2010 |
MOS varactor and fabricating method of the same JS Rieh, YH Oh, SY Kim, SY Lee US Patent 7,989,868, 2011 | 13 | 2011 |
Semiconductor device YH Oh US Patent App. 11/931,946, 2008 | 11 | 2008 |
Semiconductor device YH Oh US Patent App. 11/932,206, 2008 | 8 | 2008 |
Gate workfunction optimization of a 32 nm metal gate MOSFET for low power applications O Yong-Ho Journal of Electrical Engineering and Technology 1 (2), 237-240, 2006 | 8 | 2006 |
Effect of device layout on the stability of RF MOSFETs Y Oh, JS Rieh IEEE transactions on microwave theory and techniques 61 (5), 1861-1869, 2013 | 6 | 2013 |
An overview of challenges and current status of Si-based terahertz monolithic integrated circuits JS Rieh, Y Oh, D Yoon, N Kim, DH Kim, J Yun, H Kim, K Song 2012 IEEE 11th International Conference on Solid-State and Integrated …, 2012 | 5 | 2012 |
Variation in rf performance of mosfets due to substrate digital noise coupling Y Oh, S Jeon, JS Rieh IEEE Microwave and Wireless Components Letters 20 (7), 384-386, 2010 | 4 | 2010 |
Impact of substrate digital noise coupling on the high-frequency noise performance of RF MOSFETs Y Oh, S Lee, CH Park, JS Rieh IEEE microwave and wireless components letters 19 (9), 557-559, 2009 | 4 | 2009 |
Trench‐type deep N‐well dual guard ring for the suppression of substrate noise coupling Y Oh, S Lee, H Shin, JS Rieh International Journal of RF and Microwave Computer‐Aided Engineering 21 (1 …, 2011 | 3 | 2011 |
Semiconductor device and method for manufacturing the same YH Oh US Patent 7,682,971, 2010 | 3 | 2010 |
Noise figure formulas of RF MOSFETs in the presence of digital substrate noise CH Park, Y Oh, JS Rieh IEEE microwave and wireless components letters 20 (11), 622-624, 2010 | 2 | 2010 |
Semiconductor device and method of forming gate thereof YH Oh US Patent App. 12/136,793, 2008 | 2 | 2008 |
Semiconductor Device and Method for Manufacturing Thereof YH Oh US Patent App. 11/929,840, 2008 | 2 | 2008 |
Phase noise calculation and variability analysis of RFCMOS LC oscillator based on physics-based mixed-mode simulation SM Hong, Y Oh, N Kim, JS Rieh Solid-state electronics 79, 152-158, 2013 | 1 | 2013 |
The effect of device layout schemes on RF performance of multi-finger MOSFETs Y Oh, JS Rieh IEICE transactions on electronics 95 (5), 785-791, 2012 | 1 | 2012 |
Method of fabricating mosfet device YH Oh US Patent App. 11/926,026, 2008 | 1 | 2008 |
Semiconductor device and fabricating method thereof YH Oh US Patent App. 11/981,322, 2008 | 1 | 2008 |