| Stateful reconfigurable logic via a single-voltage-gated spin hall-effect driven magnetic tunnel junction in a spintronic memory H Zhang, W Kang, L Wang, KL Wang, W Zhao IEEE Transactions on Electron Devices 64 (10), 4295-4301, 2017 | 86 | 2017 |
| Failure analysis in magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy W Zhao, X Zhao, B Zhang, K Cao, L Wang, W Kang, Q Shi, M Wang, ... Materials 9 (1), 41, 2016 | 79 | 2016 |
| Field-free switching of perpendicular magnetization through voltage-gated spin-orbit torque SZ Peng, JQ Lu, WX Li, LZ Wang, H Zhang, X Li, KL Wang, WS Zhao 2019 IEEE International Electron Devices Meeting (IEDM), 28.6. 1-28.6. 4, 2019 | 51 | 2019 |
| Voltage-controlled magnetic tunnel junctions for processing-in-memory implementation L Wang, W Kang, F Ebrahimi, X Li, Y Huang, C Zhao, KL Wang, W Zhao IEEE Electron Device Letters 39 (3), 440-443, 2018 | 40 | 2018 |
| Interfacial perpendicular magnetic anisotropy in sub-20 nm tunnel junctions for large-capacity spin-transfer torque magnetic random-access memory S Peng, W Kang, M Wang, K Cao, X Zhao, L Wang, Y Zhang, Y Zhang, ... IEEE Magnetics Letters 8, 1-5, 2017 | 37 | 2017 |
| Recent progresses in spin transfer torque-based magnetoresistive random access memory (STT-MRAM) L Wang, Y Zhang, Z Wang, W Zhao, S Peng, L Chang SCIENTIA SINICA Physica, Mechanica & Astronomica 46 (10), 107306, 2016 | 19 | 2016 |
| Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale Y Zhang, Z Zhang, L Wang, J Nan, Z Zheng, X Li, K Wong, Y Wang, ... Applied Physics Letters 111 (5), 2017 | 18 | 2017 |
| Thermal spin torques in magnetic insulators H Yu, SD Brechet, P Che, FA Vetro, M Collet, S Tu, YG Zhang, Y Zhang, ... Physical Review B 95 (10), 104432, 2017 | 18 | 2017 |
| Low-temperature performance of nanoscale perpendicular magnetic tunnel junctions with double MgO-interface free layer K Cao, H Li, W Cai, J Wei, L Wang, Y Hu, Q Jiang, H Cui, C Zhao, W Zhao IEEE Transactions on Magnetics 55 (3), 1-4, 2018 | 13 | 2018 |
| Enhancement of perpendicular magnetic anisotropy through Fe insertion at the CoFe/W interface S Peng, L Wang, X Li, Z Wang, J Zhou, J Qiao, R Chen, Y Zhang, ... IEEE Transactions on Magnetics 54 (11), 1-5, 2018 | 13 | 2018 |
| Tuning the pinning direction of giant magnetoresistive sensor by post annealing process Z Cao, Y Wei, W Chen, S Yan, L Lin, Z Li, L Wang, H Yang, Q Leng, ... Science China Information Sciences 64, 1-7, 2021 | 9 | 2021 |
| Interface control of domain wall depinning field Y Huang, X Li, L Wang, G Yu, KL Wang, W Zhao AIP Advances 8 (5), 2018 | 8 | 2018 |
| Large spin Hall effect of perpendicularly magnetized β-W/CoFeB/MgO layers with high thermal stability L Wang, K Shi, S Peng, K Cao, H Yang, J Gao, W Zhao, C Zhao Japanese Journal of Applied Physics 58 (5), 050903, 2019 | 7 | 2019 |
| Novel magnetic tunneling junction memory cell with negative capacitance-amplified voltage-controlled magnetic anisotropy effect L Zeng, T Gao, D Zhang, S Peng, L Wang, F Gong, X Qin, M Long, ... IEEE Transactions on Electron Devices 64 (12), 4919-4927, 2017 | 7 | 2017 |
| Field-free switching of perpendicular magnetic tunnel junction via voltage-gated spin hall effect for low-power spintronic memory S Peng, X Li, W Kang, H Zhang, L Wang, Z Wang, Z Wang, Y Zhang, ... arXiv preprint arXiv:1804.11025, 2018 | 3 | 2018 |
| STT-MRAM 存储器的研究进展 赵巍胜， 王昭昊， 彭守仲， 王乐知， 常亮， 张有光 中国科学: 物理学, 力学, 天文学, 63-83, 2016 | 2 | 2016 |
| 1700 V High-performance GaN HEMTs on 6-inch Sapphire with 1.5 μm Thin Buffer X Li, J Wang, J Zhang, Z Han, S You, L Chen, L Wang, Z Li, W Yang, ... IEEE Electron Device Letters, 2023 | | 2023 |
| High voltage-controlled magnetic anisotropy and interface magnetoelectric effect in sputtered multilayers annealed at high temperatures KLW LeZhi Wang, Xiang Li, Taisuke Sasaki, Kin Wong, GuoQiang Yu, ShouZhong ... 277512 (2020) 63 (5), 54, 2020 | | 2020 |
