| Synthesis of a new mesoporous carbon and its application to electrochemical double-layer capacitors SM Oh, KB Kim Chemical communications, 2177-2178, 1999 | 860 | 1999 |
| Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases BS Lee, JR Abelson, SG Bishop, DH Kang, B Cheong, KB Kim Journal of Applied Physics 97 (9), 2005 | 779 | 2005 |
| Thermal conductivity of phase-change material Ge2Sb2Te5 HK Lyeo, DG Cahill, BS Lee, JR Abelson, MH Kwon, KB Kim, SG Bishop, ... Applied Physics Letters 89 (15), 2006 | 391 | 2006 |
| Comparative study of tantalum and tantalum nitrides (Ta2N and TaN) as a diffusion barrier for Cu metallization KH Min, KC Chun, KB Kim Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996 | 351 | 1996 |
| Transparent amorphous oxide semiconductor thin film transistor JY Kwon, DJ Lee, KB Kim Electronic Materials Letters 7, 1-11, 2011 | 318 | 2011 |
| Reactively sputtered TiN as a diffusion barrier between Cu and Si SQ Wang, I Raaijmakers, BJ Burrow, S Suthar, S Redkar, KB Kim Journal of applied physics 68 (10), 5176-5187, 1990 | 316 | 1990 |
| Ionic field effect transistors with sub-10 nm multiple nanopores SW Nam, MJ Rooks, KB Kim, SM Rossnagel Nano letters 9 (5), 2044-2048, 2009 | 313 | 2009 |
| Structural and electrical properties of atomic layer deposited Al‐doped ZnO films DJ Lee, HM Kim, JY Kwon, H Choi, SH Kim, KB Kim Advanced Functional Materials 21 (3), 448-455, 2011 | 295 | 2011 |
| Comparison of the agglomeration behavior of Au and Cu films sputter deposited on silicon dioxide JY Kwon, TS Yoon, KB Kim, SH Min Journal of applied physics 93 (6), 3270-3278, 2003 | 229 | 2003 |
| Understanding of hydrogen silsesquioxane electron resist for sub--half-pitch lithography JKW Yang, B Cord, H Duan, KK Berggren, J Klingfus, SW Nam, KB Kim, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | 223 | 2009 |
| High‐performance micro‐solid oxide fuel cells fabricated on nanoporous anodic aluminum oxide templates CW Kwon, JW Son, JH Lee, HM Kim, HW Lee, KB Kim Advanced Functional Materials 21 (6), 1154-1159, 2011 | 198 | 2011 |
| One-dimensional heat conduction model for an electrical phase change random access memory device with an memory cell DH Kang, DH Ahn, KB Kim, JF Webb, KW Yi Journal of applied physics 94 (5), 3536-3542, 2003 | 190 | 2003 |
| Recent progress in solid‐state nanopores K Lee, KB Park, HJ Kim, JS Yu, H Chae, HM Kim, KB Kim Advanced materials 30 (42), 1704680, 2018 | 179 | 2018 |
| Phase equilibria in metal‐gallium‐arsenic systems: Thermodynamic considerations for metallization materials R Beyers, KB Kim, R Sinclair Journal of applied physics 61 (6), 2195-2202, 1987 | 164 | 1987 |
| Copper interconnect structure having stuffed diffusion barrier KB Kim, PJ Soininen, I Raaijmakers US Patent 6,936,535, 2005 | 160 | 2005 |
| A low-noise solid-state nanopore platform based on a highly insulating substrate MH Lee, A Kumar, KB Park, SY Cho, HM Kim, MC Lim, YR Kim, KB Kim Scientific reports 4 (1), 7448, 2014 | 135 | 2014 |
| Controlled nanoparticle metal phosphates (metal= Al, Fe, Ce, and Sr) coatings on LiCoO2 cathode materials J Kim, M Noh, J Cho, HM Kim, KB Kim Journal of The electrochemical society 152 (6), A1142, 2005 | 135 | 2005 |
| The effect of density and microstructure on the performance of TiN barrier films in Cu metallization KC Park, KB Kim, IJMM Raaijmakers, K Ngan Journal of applied Physics 80 (10), 5674-5681, 1996 | 122 | 1996 |
| Direct evidence of phase separation in Ge2Sb2Te5 in phase change memory devices C Kim, D Kang, TY Lee, KHP Kim, YS Kang, J Lee, SW Nam, KB Kim, ... Applied Physics Letters 94 (19), 2009 | 105 | 2009 |
| Nucleation kinetics of Ru on silicon oxide and silicon nitride surfaces deposited by atomic layer deposition SS Yim, DJ Lee, KS Kim, SH Kim, TS Yoon, KB Kim Journal of Applied Physics 103 (11), 2008 | 101 | 2008 |
Hyun-Mi KimKorea Electronics Technolgy InstituteVerified email at keti.re.kr
