| Effect of random field fluctuations on excitonic transitions of individual CdSe quantum dots V Türck, S Rodt, O Stier, R Heitz, R Engelhardt, UW Pohl, D Bimberg, ... Physical Review B 61 (15), 9944, 2000 | 272 | 2000 |
| Chaotic behavior of a random laser with static disorder S Mujumdar, V Türck, R Torre, DS Wiersma Physical Review A—Atomic, Molecular, and Optical Physics 76 (3), 033807, 2007 | 156 | 2007 |
| Rewritable photonic circuits F Intonti, S Vignolini, V Türck, M Colocci, P Bettotti, L Pavesi, ... Applied physics letters 89 (21), 2006 | 155 | 2006 |
| Low-pressure metal organic chemical vapor deposition of GaN on silicon (111) substrates using an AlAs nucleation layer A Strittmatter, A Krost, M Straßburg, V Türck, D Bimberg, J Bläsing, ... Applied physics letters 74 (9), 1242-1244, 1999 | 110 | 1999 |
| Zero-dimensional excitons in (Zn, Cd) Se quantum structures M Lowisch, M Rabe, B Stegemann, F Henneberger, M Grundmann, ... Physical Review B 54 (16), R11074, 1996 | 82 | 1996 |
| Radio frequency selective addressing of localized atoms in a periodic potential H Ott, E De Mirandes, F Ferlaino, G Roati, V Türck, G Modugno, ... Physical review letters 93 (12), 120407, 2004 | 65 | 2004 |
| InGaAs quantum wires grown by low pressure metalorganic chemical vapor deposition on InP V‐grooves M Kappelt, M Grundmann, A Krost, V Türck, D Bimberg Applied physics letters 68 (25), 3596-3598, 1996 | 49 | 1996 |
| High-gain excitonic lasing from a single InAs monolayer in bulk GaAs AR Goni, M Stroh, C Thomsen, F Heinrichsdorff, V Türck, A Krost, ... Applied physics letters 72 (12), 1433-1435, 1998 | 38 | 1998 |
| Charged Excitons and Biexcitons in Self‐Organized CdSe Quantum Dots V Türck, S Rodt, R Heitz, O Stier, M Strassburg, UW Pohl, D Bimberg physica status solidi (b) 224 (1), 217-221, 2001 | 37 | 2001 |
| Evolution strategies applied to least-squares curve fitting of spectroscopic data Y Heiner, O Stier, V Türck, J Waschull, B Sumpf, A Ostermeier Journal of Quantitative Spectroscopy and Radiative Transfer 56 (5), 769-782, 1996 | 32 | 1996 |
| Few‐Particle Effects in Self‐Organized Quantum Dots S Rodt, A Schliwa, R Heitz, V Türck, O Stier, RL Sellin, M Straßburg, ... physica status solidi (b) 234 (1), 354-367, 2002 | 31 | 2002 |
| Lateral carrier transfer in quantum dot layers S Rodt, V Türck, R Heitz, F Guffarth, R Engelhardt, UW Pohl, M Straßburg, ... Physical Review B 67 (23), 235327, 2003 | 30 | 2003 |
| Laterally structured ZnCdSe/ZnSe superlattices by diffusion induced disordering M Kuttler, M Strassburg, V Türck, R Heitz, UW Pohl, D Bimberg, E Kurtz, ... Applied physics letters 69 (18), 2647-2649, 1996 | 30 | 1996 |
| LP-MOCVD growth of GaN on silicon substrates—comparison between AlAs and ZnO nucleation layers A Strittmatter, A Krost, V Türck, M Straßburg, D Bimberg, J Bläsing, ... Materials Science and Engineering: B 59 (1-3), 29-32, 1999 | 25 | 1999 |
| MOCVD of vertically stacked CdSe/ZnSSe quantum islands UW Pohl, R Engelhardt, V Türck, D Bimberg Journal of crystal growth 195 (1-4), 569-573, 1998 | 25 | 1998 |
| Proceedings of the 23rd International Conference on the Physics of Semiconductors M Lowisch, M Rabe, N Hoffmann, R Mitdank, B Stegemann, ... World Scientific, Singapore, 1996 | 24 | 1996 |
| Three-dimensionally confined excitons and biexcitons in submonolayer-CdSe/ZnSe superlattices M Strassburg, R Heitz, V Türck, S Rodt, UW Pohl, A Hoffmann, D Bimberg, ... Journal of electronic materials 28, 506-514, 1999 | 23 | 1999 |
| Line broadening and localization mechanisms in CdSe/ZnSe quantum dots V Türck, S Rodt, O Stier, R Heitz, UW Pohl, R Engelhardt, D Bimberg Journal of Luminescence 87, 337-340, 2000 | 22 | 2000 |
| Interplay of surface charges and excitons localized in CdSe/ZnSe quantum dots V Türck, S Rodt, R Heitz, O Stier, M Straßburg, UW Pohl, D Bimberg Physica E: Low-dimensional Systems and Nanostructures 13 (2-4), 269-272, 2002 | 20 | 2002 |
| Optical identification of quantum dot types in CdSe/ZnSe structures M Strassburg, T Deniozou, A Hoffmann, S Rodt, V Türck, R Heitz, ... Journal of crystal growth 214, 756-760, 2000 | 19 | 2000 |
