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Anthony O'Neill
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Experimental observation of negative capacitance in ferroelectrics at room temperature
DJR Appleby, NK Ponon, KSK Kwa, B Zou, PK Petrov, T Wang, NM Alford, ...
Nano letters 14 (7), 3864-3868, 2014
2662014
Effect of deposition conditions and post deposition anneal on reactively sputtered titanium nitride thin films
NK Ponon, DJR Appleby, E Arac, PJ King, S Ganti, KSK Kwa, A O'Neill
Thin Solid Films 578, 31-37, 2015
2152015
Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide
IP Nikitina, KV Vassilevski, NG Wright, AB Horsfall, AG O’Neill, ...
Journal of Applied Physics 97 (8), 2005
2012005
Analysis of self-heating effects in ultrathin-body SOI MOSFETs by device simulation
C Fiegna, Y Yang, E Sangiorgi, AG O'Neill
IEEE Transactions on Electron Devices 55 (1), 233-244, 2007
1672007
A model for capacitance reconstruction from measured lossy MOS capacitance–voltage characteristics
KSK Kwa, S Chattopadhyay, ND Jankovic, SH Olsen, LS Driscoll, ...
Semiconductor science and technology 18 (2), 82, 2002
1252002
The sinusoidal probe: a new approach to improve electrode longevity
HS Sohal, A Jackson, R Jackson, GJ Clowry, K Vassilevski, A O’Neill, ...
Frontiers in neuroengineering 7, 10, 2014
1222014
Deep submicron CMOS based on silicon germanium technology
AG O'Neill, DA Antoniadis
IEEE Transactions on Electron Devices 43 (6), 911-918, 1996
1031996
Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs
GK Dalapati, S Chattopadhyay, KSK Kwa, SH Olsen, YL Tsang, R Agaiby, ...
IEEE Transactions on Electron Devices 53 (5), 1142-1152, 2006
952006
Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing
KV Vassilevski, NG Wright, IP Nikitina, AB Horsfall, AG O'neill, MJ Uren, ...
Semiconductor Science and Technology 20 (3), 271, 2005
952005
High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture
SH Olsen, AG O'Neill, LS Driscoll, KSK Kwa, S Chattopadhyay, AM Waite, ...
IEEE Transactions on Electron Devices 50 (9), 1961-1969, 2003
922003
Genomewide linkage scan of schizophrenia in a large multicenter pedigree sample using single nucleotide polymorphisms
PA Holmans, B Riley, AE Pulver, MJ Owen, DB Wildenauer, PV Gejman, ...
Molecular psychiatry 14 (8), 786-795, 2009
852009
No linkage or linkage disequilibrium between brain-derived neurotrophic factor (BDNF) dinucleotide repeat polymorphism and schizophrenia in Irish families
Z Hawi, RE Straub, A O'Neill, KS Kendler, D Walsh, M Gill
Psychiatry research 81 (2), 111-116, 1998
781998
Multicenter linkage study of schizophrenia loci on chromosome 22q
BJ Mowry, PA Holmans, AE Pulver, PV Gejman, B Riley, NM Williams, ...
Molecular psychiatry 9 (8), 784-795, 2004
742004
Mechanical flexibility reduces the foreign body response to long-term implanted microelectrodes in rabbit cortex
HS Sohal, GJ Clowry, A Jackson, A O’Neill, SN Baker
PloS one 11 (10), e0165606, 2016
702016
No association or linkage between the 5‐HT2a/T102C polymorphism and schizophrenia in Irish families
Z Hawi, MV Myakishev, RE Straub, A O'Neill, KS Kendler, D Walsh, M Gill
American journal of medical genetics 74 (4), 370-373, 1997
691997
A comprehensive study on the leakage current mechanisms of Pt/SrTiO3/Pt capacitor
SA Mojarad, KSK Kwa, JP Goss, Z Zhou, NK Ponon, DJR Appleby, ...
Journal of Applied Physics 111 (1), 2012
652012
Bended Gate-All-Around Nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress
KE Moselund, P Dobrosz, S Olsen, V Pott, L De Michielis, D Tsamados, ...
2007 IEEE International Electron Devices Meeting, 191-194, 2007
602007
Device and circuit performance of SiGe/Si MOSFETs
SG Badcock, AG O’Neill, EG Chester
Solid-State Electronics 46 (11), 1925-1932, 2002
582002
Top-down fabrication of single crystal silicon nanowire using optical lithography
NF Za’bah, KSK Kwa, L Bowen, B Mendis, A O’Neill
Journal of applied physics 112 (2), 2012
522012
A new version of crystal field theory and its application to ZnSe: Co
AG O'neill, JW Allen
Solid state communications 46 (11), 833-836, 1983
521983
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