Ville Polojärvi
Title
Cited by
Cited by
Year
Nanostructured broadband antireflection coatings on AlInP fabricated by nanoimprint lithography
J Tommila, V Polojärvi, A Aho, A Tukiainen, J Viheriälä, J Salmi, ...
Solar Energy Materials and Solar Cells 94 (10), 1845-1848, 2010
892010
Composition dependent growth dynamics in molecular beam epitaxy of GaInNAs solar cells
A Aho, V Polojärvi, VM Korpijärvi, J Salmi, A Tukiainen, P Laukkanen, ...
Solar Energy Materials and Solar Cells 124, 150-158, 2014
542014
Moth‐eye antireflection coating fabricated by nanoimprint lithography on 1 eV dilute nitride solar cell
J Tommila, A Aho, A Tukiainen, V Polojärvi, J Salmi, T Niemi, M Guina
Progress in Photovoltaics: Research and Applications 21 (5), 1158-1162, 2013
502013
Performance assessment of multijunction solar cells incorporating GaInNAsSb
A Aho, A Tukiainen, V Polojärvi, M Guina
Nanoscale research letters 9 (1), 1-7, 2014
452014
High‐efficiency GaInP/GaAs/GaInNAs solar cells grown by combined MBE‐MOCVD technique
A Tukiainen, A Aho, G Gori, V Polojärvi, M Casale, E Greco, R Isoaho, ...
Progress in Photovoltaics: Research and Applications 24 (7), 914-919, 2016
382016
Influence of As/group-III flux ratio on defects formation and photovoltaic performance of GaInNAs solar cells
V Polojärvi, A Aho, A Tukiainen, M Raappana, T Aho, A Schramm, ...
Solar Energy Materials and Solar Cells 149, 213-220, 2016
352016
Dynamics of time-resolved photoluminescence in GaInNAs and GaNAsSb solar cells
A Gubanov, V Polojärvi, A Aho, A Tukiainen, NV Tkachenko, M Guina
Nanoscale research letters 9 (1), 1-4, 2014
312014
Lattice‐matched four‐junction tandem solar cell including two dilute nitride bottom junctions
A Aho, R Isoaho, L Hytönen, T Aho, M Raappana, V Polojärvi, ...
Progress in Photovoltaics: Research and Applications 27 (4), 299-305, 2019
202019
Comparative study of defect levels in GaInNAs, GaNAsSb, and GaInNAsSb for high-efficiency solar cells
V Polojärvi, A Aho, A Tukiainen, A Schramm, M Guina
Applied Physics Letters 108 (12), 122104, 2016
172016
Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells
A Aho, R Isoaho, A Tukiainen, V Polojärvi, T Aho, M Raappana, M Guina
AIP Conference Proceedings 1679 (1), 050001, 2015
172015
High current generation in dilute nitride solar cells grown by molecular beam epitaxy
A Aho, A Tukiainen, V Polojärvi, J Salmi, M Guina
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II …, 2013
172013
Annealing of self-assembled InAs/GaAs quantum dots: A stabilizing effect of beryllium doping
J Pakarinen, V Polojärvi, A Aho, P Laukkanen, CS Peng, A Schramm, ...
Applied Physics Letters 94 (7), 072105, 2009
172009
Nanostructures for light management in thin-film GaAs quantum dot solar cells
A Musu, F Cappelluti, T Aho, V Polojärvi, T Niemi, M Guina
Solid-State Lighting, JW4A. 45, 2016
162016
Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well
J Pakarinen, CS Peng, V Polojärvi, A Tukiainen, VM Korpijärvi, ...
Applied Physics Letters 93 (5), 052102, 2008
152008
Effects of and surface treatments prior to capping and thermal annealing on GaInAsN/GaAs quantum well structures
V Polojärvi, J Salmi, A Schramm, A Tukiainen, M Guina, J Pakarinen, ...
Applied Physics Letters 97 (11), 111109, 2010
142010
Enhancement of photocurrent in GaInNAs solar cells using Ag/Cu double-layer back reflector
T Aho, A Aho, A Tukiainen, V Polojärvi, T Salminen, M Raappana, ...
Applied Physics Letters 109 (25), 251104, 2016
112016
Comparison of GaInNAs and GaInNAsSb solar cells grown by plasma-assisted molecular beam epitaxy
A Aho, A Tukiainen, VM Korpijärvi, V Polojärvi, J Salmi, M Guina
AIP Conference Proceedings 1477 (1), 49-52, 2012
112012
Oxidation of the GaAs semiconductor at the Al 2 O 3/GaAs junction
M Tuominen, M Yasir, J Lång, J Dahl, M Kuzmin, J Mäkelä, M Punkkinen, ...
Physical Chemistry Chemical Physics 17 (10), 7060-7066, 2015
102015
Removal of strain relaxation induced defects by flushing of InAs quantum dots
V Polojärvi, A Schramm, A Aho, A Tukiainen, M Guina
Journal of Physics D: Applied Physics 45 (36), 365107, 2012
102012
Properties of the SiO2- and SiNx-capped GaAs(100) surfaces of GaInAsN/GaAs quantum-well heterostructures studied by photoelectron spectroscopy and …
J Dahl, V Polojärvi, J Salmi, P Laukkanen, M Guina
Applied Physics Letters 99 (10), 102105, 2011
102011
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