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Metal oxide resistive memory switching mechanism based on conductive filament properties
G Bersuker, DC Gilmer, D Veksler, P Kirsch, L Vandelli, A Padovani, ...
Journal of Applied Physics 110 (12), 124518, 2011
Modeling and optimization of a solar energy harvester system for self-powered wireless sensor networks
D Dondi, A Bertacchini, D Brunelli, L Larcher, L Benini
IEEE Transactions on industrial electronics 55 (7), 2759-2766, 2008
Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors
M Pešić, FPG Fengler, L Larcher, A Padovani, T Schenk, ED Grimley, ...
Advanced Functional Materials 26 (25), 4601-4612, 2016
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
Analysis of reliability and power efficiency in cascode class-E PAs
A Mazzanti, L Larcher, R Brama, F Svelto
IEEE Journal of Solid-State Circuits 41 (5), 1222-1229, 2006
A Physical Model of the Temperature Dependence of the Current Through Stacks
L Vandelli, A Padovani, L Larcher, RG Southwick, WB Knowlton, ...
IEEE Transactions on Electron Devices 58 (9), 2878-2887, 2011
Coexistence of grain‐boundaries‐assisted bipolar and threshold resistive switching in multilayer hexagonal boron nitride
C Pan, Y Ji, N Xiao, F Hui, K Tang, Y Guo, X Xie, FM Puglisi, L Larcher, ...
Advanced functional materials 27 (10), 1604811, 2017
Impact of programming charge distribution on threshold voltage and subthreshold slope of NROM memory cells
L Larcher, G Verzellesi, P Pavan, E Lusky, I Bloom, B Eitan
IEEE Transactions on Electron Devices 49 (11), 1939-1946, 2002
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties
G Bersuker, DC Gilmer, D Veksler, J Yum, H Park, S Lian, L Vandelli, ...
2010 International Electron Devices Meeting, 19.6. 1-19.6. 4, 2010
Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching
A Padovani, L Larcher, O Pirrotta, L Vandelli, G Bersuker
IEEE Transactions on electron devices 62 (6), 1998-2006, 2015
Statistical simulation of leakage currents in MOS and flash memory devices with a new multiphonon trap-assisted tunneling model
L Larcher
IEEE Transactions on Electron Devices 50 (5), 1246-1253, 2003
A solar energy harvesting circuit for low power applications
D Dondi, A Bertacchini, L Larcher, P Pavan, D Brunelli, L Benini
2008 IEEE International Conference on Sustainable Energy Technologies, 945-949, 2008
Grain boundary-driven leakage path formation in HfO2 dielectrics
G Bersuker, J Yum, L Vandelli, A Padovani, L Larcher, V Iglesias, M Porti, ...
Solid-State Electronics 65, 146-150, 2011
Radiation effects on floating-gate memory cells
G Cellere, P Pellati, A Chimenton, J Wyss, A Modelli, L Larcher, ...
IEEE Transactions on Nuclear Science 48 (6), 2222-2228, 2001
Experimental and theoretical study of electrode effects in HfO2 based RRAM
C Cagli, J Buckley, V Jousseaume, T Cabout, A Salaun, H Grampeix, ...
2011 International Electron Devices Meeting, 28.7. 1-28.7. 4, 2011
Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown
Y Ji, C Pan, M Zhang, S Long, X Lian, F Miao, F Hui, Y Shi, L Larcher, ...
Applied Physics Letters 108 (1), 012905, 2016
Breakdown in the metal/high-k gate stack: Identifying the “weak link” in the multilayer dielectric
G Bersuker, D Heh, C Young, H Park, P Khanal, L Larcher, A Padovani, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
Carbon-doped GeTe: a promising material for phase-change memories
GB Beneventi, L Perniola, V Sousa, E Gourvest, S Maitrejean, JC Bastien, ...
Solid-State Electronics 65, 197-204, 2011
A 30.5 dBm 48% PAE CMOS class-E PA with integrated balun for RF applications
R Brama, L Larcher, A Mazzanti, F Svelto
IEEE Journal of Solid-State Circuits 43 (8), 1755-1762, 2008
A model of radiation induced leakage current (RILC) in ultra-thin gate oxides
L Larcher, A Paccagnella, M Ceschia, G Ghidini
IEEE Transactions on Nuclear Science 46 (6), 1553-1561, 1999
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