lin dong
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Heteroepitaxy of La2O3 and La2–xYxO3 on GaAs (111)A by Atomic Layer Deposition: Achieving Low Interface Trap Density
X Wang, L Dong, J Zhang, Y Liu, PD Ye, RG Gordon
Nano letters 13 (2), 594-599, 2013
Method for fabricating nanowires for horizontal gate all around devices for semiconductor applications
BS Wood, MG Ward, S Sun, M Chudzik, NS Kim, H Chung, YC Huang, ...
US Patent App. 15/395,928, 2017
0.1-Atomic Layer Deposition Al2O3Passivated InAlN/GaN High Electron-Mobility Transistors for E-Band Power Amplifiers
D Xu, KK Chu, JA Diaz, M Ashman, JJ Komiak, LM Pleasant, C Creamer, ...
IEEE Electron Device Letters 36 (5), 442-444, 2015
Nitride passivation of the interface between high-k dielectrics and SiGe
K Sardashti, KT Hu, K Tang, S Madisetti, P McIntyre, S Oktyabrsky, ...
Applied Physics Letters 108 (1), 2016
Germanium nMOSFETs with recessed channel and S/D: Contact, scalability, interface, and drain current exceeding 1 A/mm
H Wu, M Si, L Dong, J Gu, J Zhang, DY Peide
IEEE Transactions on Electron Devices 62 (5), 1419-1426, 2015
Methods and apparatus for forming horizontal gate all around device structures
A Brand, BS Wood, N Yoshida, L Dong, S Sun, NI Chi-Nung, Y Kim
US Patent 9,673,277, 2017
Ge CMOS: Breakthroughs of nFETs (Imax=714 mA/mm, gmax=590 mS/mm) by recessed channel and S/D
H Wu, M Si, L Dong, J Zhang, DY Peide
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
Impact of germanium related defects on electrical performance of hafnium oxide
QQ Sun, Y Shi, L Dong, H Liu, SJ Ding, DW Zhang
Applied Physics Letters 92 (10), 2008
Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1− x (001) and SixGe1− x (110)
M Edmonds, K Sardashti, S Wolf, E Chagarov, M Clemons, T Kent, ...
The Journal of Chemical Physics 146 (5), 2017
GaAs Enhancement-Mode NMOSFETs Enabled by Atomic Layer Epitaxialas Dielectric
L Dong, XW Wang, JY Zhang, XF Li, RG Gordon, PD Ye
IEEE electron device letters 34 (4), 487-489, 2013
Band offset determination of atomic-layer-deposited Al2O3 and HfO2 on InP by internal photoemission and spectroscopic ellipsometry
K Xu, H Sio, OA Kirillov, L Dong, M Xu, PD Ye, D Gundlach, NV Nguyen
Journal of Applied Physics 113 (2), 2013
Method for fabricating junctions and spacers for horizontal gate all around devices
N Yoshida, L Dong, S Sun, M Kim, NS Kim, D Kioussis, M Korolik, ...
US Patent 10,177,227, 2019
Frequency response of LaAlO3/SrTiO3 all-oxide field-effect transistors
Q Liu, L Dong, Y Liu, R Gordon, DY Peide, P Fay, A Seabaugh
Solid-state electronics 76, 1-4, 2012
Electron band alignment at the interface of (100) InSb with atomic-layer deposited Al2O3
HY Chou, VV Afanas’ev, M Houssa, A Stesmans, L Dong, PD Ye
Applied Physics Letters 101 (8), 2012
Low-temperature amorphous boron nitride on Si0. 7Ge0. 3 (001), Cu, and HOPG from sequential exposures of N2H4 and BCl3
S Wolf, M Edmonds, K Sardashti, M Clemons, JH Park, N Yoshida, ...
Applied Surface Science 439, 689-696, 2018
III–V CMOS devices and circuits with high-quality atomic-layer-epitaxial La2O3/GaAs interface
L Dong, XW Wang, JY Zhang, XF Li, XB Lou, N Conrad, H Wu, ...
2014 Symposium on VLSI technology (VLSI-Technology): digest of technical …, 2014
Multi-threshold voltage structures with a lanthanum nitride film and methods of formation thereof
WV Tang, PF Ma, SCH Hung, M Chudzik, S Krishnan, W Zhang, ...
US Patent 9,748,354, 2017
0.1-InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71–76 and 81–86 GHz: Impact of Passivation and Gate Recess
D Xu, K Chu, JA Diaz, MD Ashman, JJ Komiak, LMM Pleasant, A Vera, ...
IEEE Transactions on Electron Devices 63 (8), 3076-3083, 2016
Initial reaction mechanism of nitrogen-doped zinc oxide with atomic layer deposition
L Dong, QQ Sun, Y Shi, HW Guo, H Liu, C Wang, SJ Ding, DW Zhang
Thin solid films 517 (15), 4355-4359, 2009
Effect of chlorine residue on electrical performance of atomic layer deposited hafnium silicate
QQ Sun, C Zhang, L Dong, Y Shi, SJ Ding, DW Zhang
Journal of Applied Physics 103 (11), 2008
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