Goux
Goux
Verified email at imec.be
Title
Cited by
Cited by
Year
10×10nm2Hf/HfOxcrossbar resistive RAM with excellent performance, reliability and low-energy operation
B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011
6802011
Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices
U Celano, L Goux, A Belmonte, K Opsomer, A Franquet, A Schulze, ...
Nano letters 14 (5), 2401-2406, 2014
2792014
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
2422019
Evidences of oxygen-mediated resistive-switching mechanism in cells
L Goux, P Czarnecki, YY Chen, L Pantisano, XP Wang, R Degraeve, ...
Applied Physics Letters 97 (24), 243509, 2010
2282010
Endurance/Retention Trade-off onCap 1T1R Bipolar RRAM
YY Chen, L Goux, S Clima, B Govoreanu, R Degraeve, GS Kar, A Fantini, ...
IEEE Transactions on electron devices 60 (3), 1114-1121, 2013
2052013
Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers
L Goux, JG Lisoni, M Jurczak, DJ Wouters, L Courtade, C Muller
Journal of Applied Physics 107 (2), 024512, 2010
2032010
Intrinsic switching variability in HfO2RRAM
A Fantini, L Goux, R Degraeve, DJ Wouters, N Raghavan, G Kar, ...
2013 5th IEEE International Memory Workshop, 30-33, 2013
1742013
Balancing SET/RESET Pulse forEndurance in1T1R Bipolar RRAM
YY Chen, B Govoreanu, L Goux, R Degraeve, A Fantini, GS Kar, ...
IEEE Transactions on Electron devices 59 (12), 3243-3249, 2012
1562012
Imaging the three-dimensional conductive channel in filamentary-based oxide resistive switching memory
U Celano, L Goux, R Degraeve, A Fantini, O Richard, H Bender, ...
Nano letters 15 (12), 7970-7975, 2015
1512015
Vertical phase change memory cell and methods for manufacturing thereof
LRA Goux, DJCCM Wouters, JGL Reyes, T Gille
US Patent 7,728,319, 2010
1412010
Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories
F Nardi, D Ielmini, C Cagli, S Spiga, M Fanciulli, L Goux, DJ Wouters
Solid-State Electronics 58 (1), 42-47, 2011
1242011
On the gradual unipolar and bipolar resistive switching of TiN\HfO2\Pt memory systems
L Goux, YY Chen, L Pantisano, XP Wang, G Groeseneken, M Jurczak, ...
Electrochemical and Solid State Letters 13 (6), G54, 2010
1132010
Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current
YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ...
2013 IEEE International Electron Devices Meeting, 10.1. 1-10.1. 4, 2013
1082013
Dynamic ‘hour glass’ model for SET and RESET in HfO2RRAM
R Degraeve, A Fantini, S Clima, B Govoreanu, L Goux, YY Chen, ...
2012 Symposium on VLSI Technology (VLSIT), 75-76, 2012
1052012
Optimized Ni oxidation in 80-nm contact holes for integration of forming-free and low-power Ni/NiO/Ni memory cells
L Goux, JG Lisoni, XP Wang, M Jurczak, DJ Wouters
IEEE transactions on electron devices 56 (10), 2363-2368, 2009
1012009
Method for controlled formation of the resistive switching material in a resistive switching device and device obtained thereof
L Goux, D Wouters
US Patent App. 12/439,430, 2010
972010
Understanding of the endurance failure in scaled HfO2-based 1T1R RRAM through vacancy mobility degradation
YY Chen, R Degraeve, S Clima, B Govoreanu, L Goux, A Fantini, GS Kar, ...
2012 International Electron Devices Meeting, 20.3. 1-20.3. 4, 2012
892012
Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells
L Goux, K Opsomer, R Degraeve, R Müller, C Detavernier, DJ Wouters, ...
Applied Physics Letters 99 (5), 053502, 2011
892011
A Thermally Stable and High-Performance 90-nm-Based 1T1R CBRAM Cell
A Belmonte, W Kim, BT Chan, N Heylen, A Fantini, M Houssa, M Jurczak, ...
IEEE transactions on electron devices 60 (11), 3690-3695, 2013
732013
Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering
L Goux, A Fantini, G Kar, YY Chen, N Jossart, R Degraeve, S Clima, ...
2012 Symposium on VLSI Technology (VLSIT), 159-160, 2012
722012
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