David J. Meyer
Title
Cited by
Cited by
Year
Assessment of GaN surface pretreatment for atomic layer deposited high-k dielectrics
N Nepal, NY Garces, DJ Meyer, JK Hite, MA Mastro, CR Eddy Jr
Applied physics express 4 (5), 055802, 2011
782011
Fully coupled thermoelectromechanical analysis of GaN high electron mobility transistor degradation
MG Ancona, SC Binari, DJ Meyer
Journal of Applied Physics 111 (7), 074504, 2012
672012
High electron velocity submicrometer AlN/GaN MOS-HEMTs on freestanding GaN substrates
DJ Meyer, DA Deen, DF Storm, MG Ancona, DS Katzer, R Bass, ...
IEEE electron device letters 34 (2), 199-201, 2013
542013
GaN/NbN epitaxial semiconductor/superconductor heterostructures
R Yan, G Khalsa, S Vishwanath, Y Han, J Wright, S Rouvimov, DS Katzer, ...
Nature 555 (7695), 183-189, 2018
492018
Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors
DA Deen, DF Storm, R Bass, DJ Meyer, DS Katzer, SC Binari, JW Lacis, ...
Applied Physics Letters 98 (2), 023506, 2011
452011
SiNx/InAlN/AlN/GaN MIS-HEMTs With 10.8 THz-V Johnson Figure of Merit
BP Downey, DJ Meyer, DS Katzer, JA Roussos, M Pan, X Gao
Electron Device Letters, IEEE 35 (5), 527-529, 2014
42*2014
AlN/GaN HEMTs with high‐κ ALD HfO2 or Ta2O5 gate insulation
D Deen, D Storm, D Meyer, DS Katzer, R Bass, S Binari, T Gougousi
physica status solidi c 8 (7‐8), 2420-2423, 2011
342011
Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates
MT Hardy, BP Downey, N Nepal, DF Storm, DS Katzer, DJ Meyer
Applied Physics Letters 110 (16), 162104, 2017
322017
Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy
TA Growden, DF Storm, W Zhang, ER Brown, DJ Meyer, P Fakhimi, ...
Applied Physics Letters 109 (8), 083504, 2016
322016
Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures
DA Deen, DF Storm, DS Katzer, DJ Meyer, SC Binari
Solid-State Electronics 54 (6), 613-615, 2010
322010
Epitaxial lift-off and transfer of III-N materials and devices from SiC substrates
DJ Meyer, BP Downey, DS Katzer, N Nepal, VD Wheeler, MT Hardy, ...
IEEE Transactions on Semiconductor Manufacturing 29 (4), 384-389, 2016
312016
Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates
DS Katzer, N Nepal, DJ Meyer, BP Downey, VD Wheeler, DF Storm, ...
Applied Physics Express 8 (8), 085501, 2015
302015
Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures
TA Growden, W Zhang, ER Brown, DF Storm, DJ Meyer, PR Berger
Light: Science & Applications 7 (2), 17150-17150, 2018
272018
Large-signal RF performance of nanocrystalline diamond coated AlGaN/GaN high electron mobility transistors
DJ Meyer, TI Feygelson, TJ Anderson, JA Roussos, MJ Tadjer, ...
IEEE Electron Device Letters 35 (10), 1013-1015, 2014
252014
Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates
DA Deen, DF Storm, DJ Meyer, R Bass, SC Binari, T Gougousi, KR Evans
Applied Physics Letters 105 (9), 093503, 2014
252014
Structure of 6H silicon carbide/silicon dioxide interface trapping defects
DJ Meyer, NA Bohna, PM Lenahan, AJ Lelis
Applied physics letters 84 (17), 3406-3408, 2004
252004
Observation of trapping defects in –silicon carbide metal-oxide-semiconductor field-effect transistors by spin-dependent recombination
DJ Meyer, PM Lenahan, AJ Lelis
Applied Physics Letters 86 (2), 023503, 2005
242005
Graded AlGaN channel transistors for improved current and power gain linearity
S Bajaj, Z Yang, F Akyol, PS Park, Y Zhang, AL Price, S Krishnamoorthy, ...
IEEE Transactions on Electron Devices 64 (8), 3114-3119, 2017
232017
Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates
DF Storm, MT Hardy, DS Katzer, N Nepal, BP Downey, DJ Meyer, ...
Journal of Crystal Growth 456, 121-132, 2016
232016
431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes
TA Growden, W Zhang, ER Brown, DF Storm, K Hansen, P Fakhimi, ...
Applied Physics Letters 112 (3), 033508, 2018
212018
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