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Shaoteng Wu
Shaoteng Wu
Associate Professor, Institute of Semiconductors, CAS, Nanyang Technological University
Verified email at semi.ac.cn
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Cited by
Cited by
Year
GaN with laterally aligned nanopores to enhance the water splitting
C Yang, L Liu, S Zhu, Z Yu, X Xi, S Wu, H Cao, J Li, L Zhao
The Journal of Physical Chemistry C 121 (13), 7331-7336, 2017
512017
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
B Son, Y Lin, KH Lee, Y Wang, S Wu, CS Tan
Optics Express 28 (16), 23978-23990, 2020
302020
Photo detection and modulation from 1,550 to 2,000 nm realized by a GeSn/Ge multiple-quantum-well photodiode on a 300-mm Si substrate
H Zhou, S Xu, S Wu, YC Huang, P Zhao, J Tong, B Son, X Guo, D Zhang, ...
Optics Express 28 (23), 34772-34786, 2020
292020
Modulation of light absorption in flexible GeSn metal–semiconductor–metal photodetectors by mechanical bending
S An, S Wu, CS Tan, GE Chang, X Gong, M Kim
Journal of Materials Chemistry C 8 (39), 13557-13562, 2020
282020
High-performance back-illuminated Ge 0.92 Sn 0.08/Ge multiple-quantum-well photodetector on Si platform for SWIR detection
S Wu, S Xu, H Zhou, Y Jin, Q Chen, YC Huang, L Zhang, X Gong, CS Tan
IEEE Journal of Selected Topics in Quantum Electronics 28 (2: Optical …, 2022
222022
Ultrafast growth of horizontal GaN nanowires by HVPE through flipping the substrate
S Wu, L Wang, Z Liu, X Yi, Y Huang, C Yang, T Wei, J Yan, G Yuan, ...
Nanoscale 10 (13), 5888-5896, 2018
222018
Crystallographic orientation control and optical properties of GaN nanowires
S Wu, L Wang, X Yi, Z Liu, J Yan, G Yuan, T Wei, J Wang, J Li
RSC advances 8 (4), 2181-2187, 2018
192018
Simulation of high-efficiency resonant-cavity-enhanced GeSn single-photon avalanche photodiodes for sensing and optical quantum applications
Q Chen, S Wu, L Zhang, W Fan, CS Tan
IEEE Sensors Journal 21 (13), 14789-14798, 2021
142021
Influence of lateral growth on the optical properties of GaN nanowires grown by hydride vapor phase epitaxy
S Wu, L Wang, X Yi, Z Liu, T Wei, G Yuan, J Wang, J Li
Journal of Applied Physics 122 (20), 2017
142017
Surface plasmon enhanced GeSn photodetectors operating at 2 µm
H Zhou, L Zhang, J Tong, S Wu, B Son, Q Chen, DH Zhang, CS Tan
Optics Express 29 (6), 8498-8509, 2021
122021
Transferable single-layer GeSn nanomembrane resonant-cavity-enhanced photodetectors for 2 μm band optical communication and multi-spectral short-wave infrared sensing
Q Chen, S Wu, L Zhang, H Zhou, W Fan, CS Tan
Nanoscale 14 (19), 7341-7349, 2022
102022
GeSn-on-insulator dual-waveband resonant-cavity-enhanced photodetectors at the 2 µm and 1.55 µm optical communication bands
Q Chen, S Wu, L Zhang, D Burt, H Zhou, D Nam, W Fan, CS Tan
Optics Letters 46 (15), 3809-3812, 2021
102021
Insights into the origins of guided microtrenches and Microholes/rings from Sn segregation in germanium–tin epilayers
S Wu, L Zhang, B Son, Q Chen, H Zhou, CS Tan
The Journal of Physical Chemistry C 124 (37), 20035-20045, 2020
102020
Suspended germanium membranes photodetector with tunable biaxial tensile strain and location-determined wavelength-selective photoresponsivity
S Wu, H Zhou, Q Chen, L Zhang, KH Lee, S Bao, W Fan, CS Tan
Applied Physics Letters 119 (19), 2021
92021
Sputtered copper nitride-copper nitride direct bonding
L Hu, SCK Goh, S Wu, CS Tan
2021 7th International Workshop on Low Temperature Bonding for 3D …, 2021
92021
High-sensitivity and mechanically compliant flexible ge photodetectors with a vertical p–i–n configuration
S An, S Wu, KH Lee, CS Tan, YC Tai, GE Chang, M Kim
ACS Applied Electronic Materials 3 (4), 1780-1786, 2021
92021
Growth and characterizations of GeSn films with high Sn composition by chemical vapor deposition (CVD) using Ge2H6 and SnCl4 for mid-IR applications
L Zhang, Q Chen, S Wu, BK Son, KH Lee, GY Chong, CS Tan
ECS Transactions 98 (5), 91, 2020
82020
Synthesis and morphology evolution of indium nitride (InN) nanotubes and nanobelts by chemical vapor deposition
W Song, J Si, S Wu, Z Hu, L Long, T Li, X Gao, L Zhang, W Zhu, L Wang
CrystEngComm 21 (35), 5356-5362, 2019
72019
Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes
Y Huang, Z Liu, X Yi, Y Guo, S Wu, G Yuan, JX Wang, G Wang, J Li
AIP Advances 6 (4), 2016
72016
A route toward high-detectivity and low-cost short-wave infrared photodetection: GeSn/Ge multiple-quantum-well photodetectors with a dielectric nanohole array metasurface
Q Chen, H Zhou, S Xu, YC Huang, S Wu, KH Lee, X Gong, CS Tan
ACS nano 17 (13), 12151-12159, 2023
62023
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