GaN with laterally aligned nanopores to enhance the water splitting C Yang, L Liu, S Zhu, Z Yu, X Xi, S Wu, H Cao, J Li, L Zhao The Journal of Physical Chemistry C 121 (13), 7331-7336, 2017 | 51 | 2017 |
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation B Son, Y Lin, KH Lee, Y Wang, S Wu, CS Tan Optics Express 28 (16), 23978-23990, 2020 | 30 | 2020 |
Photo detection and modulation from 1,550 to 2,000 nm realized by a GeSn/Ge multiple-quantum-well photodiode on a 300-mm Si substrate H Zhou, S Xu, S Wu, YC Huang, P Zhao, J Tong, B Son, X Guo, D Zhang, ... Optics Express 28 (23), 34772-34786, 2020 | 29 | 2020 |
Modulation of light absorption in flexible GeSn metal–semiconductor–metal photodetectors by mechanical bending S An, S Wu, CS Tan, GE Chang, X Gong, M Kim Journal of Materials Chemistry C 8 (39), 13557-13562, 2020 | 28 | 2020 |
High-performance back-illuminated Ge 0.92 Sn 0.08/Ge multiple-quantum-well photodetector on Si platform for SWIR detection S Wu, S Xu, H Zhou, Y Jin, Q Chen, YC Huang, L Zhang, X Gong, CS Tan IEEE Journal of Selected Topics in Quantum Electronics 28 (2: Optical …, 2022 | 22 | 2022 |
Ultrafast growth of horizontal GaN nanowires by HVPE through flipping the substrate S Wu, L Wang, Z Liu, X Yi, Y Huang, C Yang, T Wei, J Yan, G Yuan, ... Nanoscale 10 (13), 5888-5896, 2018 | 22 | 2018 |
Crystallographic orientation control and optical properties of GaN nanowires S Wu, L Wang, X Yi, Z Liu, J Yan, G Yuan, T Wei, J Wang, J Li RSC advances 8 (4), 2181-2187, 2018 | 19 | 2018 |
Simulation of high-efficiency resonant-cavity-enhanced GeSn single-photon avalanche photodiodes for sensing and optical quantum applications Q Chen, S Wu, L Zhang, W Fan, CS Tan IEEE Sensors Journal 21 (13), 14789-14798, 2021 | 14 | 2021 |
Influence of lateral growth on the optical properties of GaN nanowires grown by hydride vapor phase epitaxy S Wu, L Wang, X Yi, Z Liu, T Wei, G Yuan, J Wang, J Li Journal of Applied Physics 122 (20), 2017 | 14 | 2017 |
Surface plasmon enhanced GeSn photodetectors operating at 2 µm H Zhou, L Zhang, J Tong, S Wu, B Son, Q Chen, DH Zhang, CS Tan Optics Express 29 (6), 8498-8509, 2021 | 12 | 2021 |
Transferable single-layer GeSn nanomembrane resonant-cavity-enhanced photodetectors for 2 μm band optical communication and multi-spectral short-wave infrared sensing Q Chen, S Wu, L Zhang, H Zhou, W Fan, CS Tan Nanoscale 14 (19), 7341-7349, 2022 | 10 | 2022 |
GeSn-on-insulator dual-waveband resonant-cavity-enhanced photodetectors at the 2 µm and 1.55 µm optical communication bands Q Chen, S Wu, L Zhang, D Burt, H Zhou, D Nam, W Fan, CS Tan Optics Letters 46 (15), 3809-3812, 2021 | 10 | 2021 |
Insights into the origins of guided microtrenches and Microholes/rings from Sn segregation in germanium–tin epilayers S Wu, L Zhang, B Son, Q Chen, H Zhou, CS Tan The Journal of Physical Chemistry C 124 (37), 20035-20045, 2020 | 10 | 2020 |
Suspended germanium membranes photodetector with tunable biaxial tensile strain and location-determined wavelength-selective photoresponsivity S Wu, H Zhou, Q Chen, L Zhang, KH Lee, S Bao, W Fan, CS Tan Applied Physics Letters 119 (19), 2021 | 9 | 2021 |
Sputtered copper nitride-copper nitride direct bonding L Hu, SCK Goh, S Wu, CS Tan 2021 7th International Workshop on Low Temperature Bonding for 3D …, 2021 | 9 | 2021 |
High-sensitivity and mechanically compliant flexible ge photodetectors with a vertical p–i–n configuration S An, S Wu, KH Lee, CS Tan, YC Tai, GE Chang, M Kim ACS Applied Electronic Materials 3 (4), 1780-1786, 2021 | 9 | 2021 |
Growth and characterizations of GeSn films with high Sn composition by chemical vapor deposition (CVD) using Ge2H6 and SnCl4 for mid-IR applications L Zhang, Q Chen, S Wu, BK Son, KH Lee, GY Chong, CS Tan ECS Transactions 98 (5), 91, 2020 | 8 | 2020 |
Synthesis and morphology evolution of indium nitride (InN) nanotubes and nanobelts by chemical vapor deposition W Song, J Si, S Wu, Z Hu, L Long, T Li, X Gao, L Zhang, W Zhu, L Wang CrystEngComm 21 (35), 5356-5362, 2019 | 7 | 2019 |
Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes Y Huang, Z Liu, X Yi, Y Guo, S Wu, G Yuan, JX Wang, G Wang, J Li AIP Advances 6 (4), 2016 | 7 | 2016 |
A route toward high-detectivity and low-cost short-wave infrared photodetection: GeSn/Ge multiple-quantum-well photodetectors with a dielectric nanohole array metasurface Q Chen, H Zhou, S Xu, YC Huang, S Wu, KH Lee, X Gong, CS Tan ACS nano 17 (13), 12151-12159, 2023 | 6 | 2023 |