LAAS-CNRS Toulouse, France
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Energetics of self-interstitial clusters in Si
NEB Cowern, G Mannino, PA Stolk, F Roozeboom, HGA Huizing, ...
Physical Review Letters 82 (22), 4460, 1999
Extended defects in shallow implants
A Claverie, B Colombeau, B De Mauduit, C Bonafos, X Hebras, ...
Applied Physics A 76 (7), 1025-1033, 2003
Engineering strained silicon on insulator wafers with the Smart CutTM technology
B Ghyselen, JM Hartmann, T Ernst, C Aulnette, B Osternaud, ...
Solid-state electronics 48 (8), 1285-1296, 2004
Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions
BJ Pawlak, R Surdeanu, B Colombeau, AJ Smith, NEB Cowern, ...
Applied Physics Letters 84 (12), 2055-2057, 2004
Formation energies and relative stability of perfect and faulted dislocation loops in silicon
F Cristiano, J Grisolia, B Colombeau, M Omri, B De Mauduit, A Claverie, ...
Journal of Applied Physics 87 (12), 8420-8428, 2000
Visible photoluminescence at room temperature from microcrystalline silicon precipitates in SiO2 formed by ion implantation
T Komoda, J Kelly, F Cristiano, A Nejim, PLF Hemment, KP Homewood, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995
Mechanisms of B deactivation control by F co-implantation
NEB Cowern, B Colombeau, J Benson, AJ Smith, W Lerch, S Paul, T Graf, ...
Applied Physics Letters 86 (10), 101905, 2005
Advanced activation of ultra-shallow junctions using flash-assisted RTP
W Lerch, S Paul, J Niess, S McCoy, T Selinger, J Gelpey, F Cristiano, ...
Materials Science and Engineering: B 124, 24-31, 2005
Thermal evolution of extended defects in implanted Si:: impact on dopant diffusion
A Claverie, B Colombeau, GB Assayag, C Bonafos, F Cristiano, M Omri, ...
Materials Science in Semiconductor Processing 3 (4), 269-277, 2000
Clusters formation in ultralow-energy high-dose boron-implanted silicon
F Cristiano, X Hebras, N Cherkashin, A Claverie, W Lerch, S Paul
Applied physics letters 83 (26), 5407-5409, 2003
A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon
CJ Ortiz, P Pichler, T Fühner, F Cristiano, B Colombeau, NEB Cowern, ...
Journal of applied physics 96 (9), 4866-4877, 2004
Reduced pressure chemical vapour deposition of SiGe virtual substrates for high mobility devices
JM Hartmann, Y Bogumilowicz, P Holliger, F Laugier, R Truche, ...
Semiconductor science and technology 19 (3), 311, 2003
Kinetic aspects of the growth of platelets and voids in H implanted Si
J Grisolia, F Cristiano, GB Assayag, A Claverie
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2001
Ion beam induced defects in crystalline silicon
F Cristiano, N Cherkashin, X Hebras, P Calvo, Y Lamrani, E Scheid, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004
Direct imaging of boron segregation to extended defects in silicon
S Duguay, T Philippe, F Cristiano, D Blavette
Applied Physics Letters 97 (24), 242104, 2010
Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans
JA Sharp, NEB Cowern, RP Webb, KJ Kirkby, D Giubertoni, S Gennaro, ...
Applied physics letters 89 (19), 192105, 2006
Evolution of boron-interstitial clusters in crystalline Si studied by transmission electron microscopy
S Boninelli, S Mirabella, E Bruno, F Priolo, F Cristiano, A Claverie, ...
Applied Physics Letters 91 (3), 031905, 2007
Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions
F Cristiano, N Cherkashin, P Calvo, Y Lamrani, X Hebras, A Claverie, ...
Materials Science and Engineering: B 114, 174-179, 2004
Comprehensive study of the electron scattering mechanisms in 4H-SiC MOSFETs
V Uhnevionak, A Burenkov, C Strenger, G Ortiz, E Bedel-Pereira, V Mortet, ...
IEEE Transactions on Electron Devices 62 (8), 2562-2570, 2015
Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon
B Colombeau, F Cristiano, A Altibelli, C Bonafos, GB Assayag, A Claverie
Applied Physics Letters 78 (7), 940-942, 2001
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