| Charge disproportionate molecular redox for discrete memristive and memcapacitive switching S Goswami, SP Rath, D Thompson, S Hedström, M Annamalai, ... Nature nanotechnology 15 (5), 380-389, 2020 | 81 | 2020 |
| Reversible hydrogen control of antiferromagnetic anisotropy in α-Fe2O3 H Jani, J Linghu, S Hooda, RV Chopdekar, C Li, GJ Omar, S Prakash, ... Nature communications 12 (1), 1668, 2021 | 44 | 2021 |
| Tunable and enhanced Rashba spin-orbit coupling in iridate-manganite heterostructures TS Suraj, GJ Omar, H Jani, MM Juvaid, S Hooda, A Chaudhuri, A Rusydi, ... Physical Review B 102 (12), 125145, 2020 | 24 | 2020 |
| Direct growth of wafer-scale, transparent, p-type reduced-graphene-oxide-like thin films by pulsed laser deposition MM Juvaid, S Sarkar, PK Gogoi, S Ghosh, M Annamalai, YC Lin, ... ACS nano 14 (3), 3290-3298, 2020 | 23 | 2020 |
| Role of ion beam induced solid flow in surface patterning of Si (1 0 0) using Ar ion beam irradiation T Kumar, A Kumar, NP Lalla, S Hooda, S Ojha, S Verma, D Kanjilal Applied surface science 283, 417-421, 2013 | 22 | 2013 |
| Anatase TiO2—A Model System for Large Polaron Transport B Yan, D Wan, X Chi, C Li, MR Motapothula, S Hooda, P Yang, Z Huang, ... ACS applied materials & interfaces 10 (44), 38201-38208, 2018 | 21 | 2018 |
| Reconfigurable nonlinear photonic activation function for photonic neural network based on non-volatile opto-resistive RAM switch Z Xu, B Tang, X Zhang, JF Leong, J Pan, S Hooda, E Zamburg, ... Light: Science & Applications 11 (1), 288, 2022 | 15 | 2022 |
| Stress-memorized HZO for high-performance ferroelectric field-effect memtransistor SH Tsai, Z Fang, X Wang, U Chand, CK Chen, S Hooda, M Sivan, J Pan, ... ACS Applied Electronic Materials 4 (4), 1642-1650, 2022 | 15 | 2022 |
| Structural manipulation in Ge by swift heavy ions governed by electron–phonon coupling strength S Hooda, B Satpati, S Ojha, T Kumar, D Kanjilal, D Kabiraj Materials Research Express 2 (4), 045903, 2015 | 15 | 2015 |
| Nanopores formation and shape evolution in Ge during intense ionizing irradiation S Hooda, SA Khan, B Satpati, A Uedono, S Sellaiyan, K Asokan, ... Microporous and Mesoporous Materials 225, 323-330, 2016 | 14 | 2016 |
| Effect of ion beam parameters on engineering of nanoscale voids and their stability under post-growth annealing S Hooda, SA Khan, B Satpati, D Stange, D Buca, M Bala, C Pannu, ... Applied Physics A 122, 1-7, 2016 | 11 | 2016 |
| Experimental Evidence of Electron-Gas Rashba Interaction Induced by Asymmetric Orbital Hybridization GJ Omar, WL Kong, H Jani, MS Li, J Zhou, ZS Lim, S Prakash, SW Zeng, ... Physical Review Letters 129 (18), 187203, 2022 | 9 | 2022 |
| Mechanistic details of the formation and growth of nanoscale voids in Ge under extreme conditions within an ion track S Hooda, K Avchachov, SA Khan, F Djurabekova, K Nordlund, B Satpati, ... Journal of Physics D: Applied Physics 50 (22), 225302, 2017 | 8 | 2017 |
| Ion beam induced optical and surface modification in plasmonic nanostructures UB Singh, SK Gautam, S Kumar, S Hooda, S Ojha, F Singh Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2016 | 8 | 2016 |
| Swift heavy ion induced structural evolution in InP S Mishra, S Hooda, D Kabiraj, A Roy Vacuum 119, 136-144, 2015 | 8 | 2015 |
| First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation … CK Chen, Z Fang, S Hooda, M Lal, U Chand, Z Xu, J Pan, SH Tsai, ... 2022 International Electron Devices Meeting (IEDM), 6.1. 1-6.1. 4, 2022 | 7 | 2022 |
| Overcoming Negative nFET VTH by Defect-Compensated Low-Thermal Budget ITO-IGZO Hetero-Oxide Channel to Achieve Record Mobility and Enhancement … S Hooda, CK Chen, M Lal, SH Tsai, E Zamburg, AVY Thean 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 6 | 2023 |
| Regrowth of Ge with different degrees of damage under thermal and athermal treatment S Hooda, B Satpati, T Kumar, S Ojha, D Kanjilal, D Kabiraj RSC advances 6 (6), 4576-4586, 2016 | 6 | 2016 |
| Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm ION at VDS 1V, High µ-84 cm2/V-s and1T-1RRAM Memory Cell Demonstration Memory … U Chand, MMS Aly, M Lal, C Chun-Kuei, S Hooda, SH Tsai, Z Fang, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 5 | 2022 |
| Low-thermal-budget beol-compatible beyond-silicon transistor technologies for future monolithic-3d compute and memory applications A Thean, SH Tsai, CK Chen, M Sivan, B Tang, S Hooda, Z Fang, J Pan, ... 2022 International Electron Devices Meeting (IEDM), 12.2. 1-12.2. 4, 2022 | 4 | 2022 |
