Dislocation nucleation near the critical thickness in GeSi/Si strained layers DJ Eaglesham, EP Kvam, DM Maher, CJ Humphreys, JC Bean Philosophical Magazine A 59 (5), 1059-1073, 1989 | 197 | 1989 |
Variation of dislocation morphology with strain in GexSi1− x epilayers on (100) Si EP Kvam, DM Maher, CJ Humphreys Journal of Materials Research 5 (9), 1900-1907, 1990 | 131 | 1990 |
Surface orientation and stacking fault generation in strained epitaxial growth EP Kvam, R Hull Journal of applied physics 73 (11), 7407-7411, 1993 | 64 | 1993 |
Critical current density and microstructure of melt-processed YBa2Cu3Ox with PtO2 additions C Varanasi, PJ McGinn, V Pavate, EP Kvam Physica C: Superconductivity 221 (1-2), 46-52, 1994 | 59 | 1994 |
Development of epitaxial AlxSc1−xN for artificially structured metal/semiconductor superlattice metamaterials B Saha, S Saber, GV Naik, A Boltasseva, EA Stach, EP Kvam, TD Sands physica status solidi (b) 252 (2), 251-259, 2015 | 57 | 2015 |
X‐ray topography of the coherency breakdown in GexSi1−x/Si(100) DJ Eaglesham, EP Kvam, DM Maher, CJ Humphreys, GS Green, ... Applied physics letters 53 (21), 2083-2085, 1988 | 54 | 1988 |
New Source of Dislocations in Strained Epitaxial Layers DJ Eaglesham, DM Maher, EP Kvam, JC Bean, CJ Humphreys Physical review letters 62 (2), 187, 1989 | 50 | 1989 |
The Nucleation and Propagation of Misfit Dislocations aear the Critical Thickness in Ge-Si Strained Epilayers EP Kvam, DJ Eaglesham, DM Maher, CJ Humphreys, JC Bean, GS Green, ... MRS Online Proceedings Library (OPL) 104, 623, 1987 | 42 | 1987 |
Residual strains in cubic silicon carbide measured by Raman spectroscopy correlated with x-ray diffraction and transmission electron microscopy MA Capano, BC Kim, AR Smith, EP Kvam, S Tsoi, AK Ramdas Journal of applied physics 100 (8), 2006 | 38 | 2006 |
Synthesis and optimization of a new starch-based adsorbent for dehumidification of air in a pressure-swing dryer LE Anderson, M Gulati, PJ Westgate, EP Kvam, K Bowman, MR Ladisch Industrial & engineering chemistry research 35 (4), 1180-1187, 1996 | 33 | 1996 |
Cross‐section transmission electron microscopy study of carbon‐implanted layers in silicon H Wong, J Lou, NW Cheung, EP Kvam, KM Yu, DA Olson, J Washburn Applied physics letters 57 (8), 798-800, 1990 | 33 | 1990 |
Observations of hierarchical grain-boundary dislocation structures in [001] symmetric tilt boundaries in gold EP Kvam, RW Balluffi Philosophical Magazine A 56 (1), 137-148, 1987 | 32 | 1987 |
Effect of enzyme modification of corn grits on their properties as an adsorbent in a skarstrom pressure swing cycle dryer KE Beery, M Gulati, EP Kvam, MR Ladisch Adsorption 4, 321-335, 1998 | 25 | 1998 |
Effects of processing parameters on the levitation force of melt-processed YBa2Cu3Ox C Varanasi, PJ McGinn, V Pavate, EP Kvam Journal of materials research 10 (9), 2251-2256, 1995 | 25 | 1995 |
Crystalline linkage and defect structures in bulk zone melt textured YBa2Cu3O7 observed by transmission electron microscopy A Zanota, EP Kvam, D Balkin, PJ McGinn Applied physics letters 62 (21), 2722-2724, 1993 | 25 | 1993 |
Deformation induced defects in ReBa2Cu3O7− δ MJ Kramer, LS Chumbley, RW McCallum, WJ Nellis, S Weir, EP Kvam Physica C: Superconductivity 166 (1-2), 115-124, 1990 | 25 | 1990 |
Evidence for misfit dislocation-related carrier accumulation at the InAs/GaP heterointerface V Gopal, EP Kvam, TP Chin, JM Woodall Applied physics letters 72 (18), 2319-2321, 1998 | 24 | 1998 |
Possible dislocation multiplication source in (001) semiconductor epitaxy J Washburn, EP Kvam Applied physics letters 57 (16), 1637-1639, 1990 | 23 | 1990 |
Interactions of dislocations and antiphase (inversion) domain boundaries in III–V/IV heteroepitaxy EP Kvam Journal of electronic materials 23, 1021-1026, 1994 | 22 | 1994 |
The origin of dislocations in multilayers CJ Humphreys, DM Maher, DJ Eaglesham, EP Kvam, IG Salisbury Journal de Physique III 1 (6), 1119-1130, 1991 | 22 | 1991 |