| Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons S Tongay, J Suh, C Ataca, W Fan, A Luce, JS Kang, J Liu, C Ko, ... Scientific reports 3 (1), 2657, 2013 | 1211 | 2013 |
| Oxide electronics utilizing ultrafast metal-insulator transitions Z Yang, C Ko, S Ramanathan Annual Review of Materials Research 41 (1), 337-367, 2011 | 1150 | 2011 |
| Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling S Tongay, H Sahin, C Ko, A Luce, W Fan, K Liu, J Zhou, YS Huang, ... Nature communications 5 (1), 3252, 2014 | 1099 | 2014 |
| Doping against the native propensity of MoS2: degenerate hole doping by cation substitution J Suh, TE Park, DY Lin, D Fu, J Park, HJ Jung, Y Chen, C Ko, C Jang, ... Nano letters 14 (12), 6976-6982, 2014 | 748 | 2014 |
| Vanadium Dioxide as a Natural Disordered Metamaterial: Perfect Thermal Emission<? format?> and Large Broadband Negative Differential Thermal Emittance MA Kats, R Blanchard, S Zhang, P Genevet, C Ko, S Ramanathan, ... Physical Review X 3 (4), 041004, 2013 | 459 | 2013 |
| Anomalously low electronic thermal conductivity in metallic vanadium dioxide S Lee, K Hippalgaonkar, F Yang, J Hong, C Ko, J Suh, K Liu, K Wang, ... Science 355 (6323), 371-374, 2017 | 430 | 2017 |
| Anisotropic in-plane thermal conductivity of black phosphorus nanoribbons at temperatures higher than 100 K S Lee, F Yang, J Suh, S Yang, Y Lee, G Li, H Sung Choe, A Suslu, ... Nature communications 6 (1), 1-7, 2015 | 411 | 2015 |
| Voltage-triggered ultrafast phase transition in vanadium dioxide switches Y Zhou, X Chen, C Ko, Z Yang, C Mouli, S Ramanathan IEEE Electron Device Letters 34 (2), 220-222, 2013 | 325 | 2013 |
| Recent advances in process engineering and upcoming applications of metal–organic frameworks UJ Ryu, S Jee, PC Rao, J Shin, C Ko, M Yoon, KS Park, KM Choi Coordination Chemistry Reviews 426, 213544, 2020 | 305 | 2020 |
| Dielectric and carrier transport properties of vanadium dioxide thin films across the phase transition utilizing gated capacitor devices Z Yang, C Ko, V Balakrishnan, G Gopalakrishnan, S Ramanathan Physical Review B—Condensed Matter and Materials Physics 82 (20), 205101, 2010 | 290 | 2010 |
| Visualizing nanoscale excitonic relaxation properties of disordered edges and grain boundaries in monolayer molybdenum disulfide W Bao, NJ Borys, C Ko, J Suh, W Fan, A Thron, Y Zhang, A Buyanin, ... Nature communications 6 (1), 7993, 2015 | 269 | 2015 |
| Thermal conductivity and dynamic heat capacity across the metal-insulator transition in thin film VO2 DW Oh, C Ko, S Ramanathan, DG Cahill Applied Physics Letters 96 (15), 2010 | 265 | 2010 |
| Black Arsenic: A Layered Semiconductor with Extreme InPlane Anisotropy Y Chen, C Chen, R Kealhofer, H Liu, Z Yuan, L Jiang, J Suh, J Park, C Ko, ... Advanced Materials 30 (30), 1800754, 2018 | 226 | 2018 |
| Large resistivity modulation in mixed-phase metallic systems Y Lee, ZQ Liu, JT Heron, JD Clarkson, J Hong, C Ko, MD Biegalski, ... Nature communications 6 (1), 5959, 2015 | 224 | 2015 |
| Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer D Ruzmetov, G Gopalakrishnan, C Ko, V Narayanamurti, S Ramanathan Journal of Applied Physics 107 (11), 2010 | 202 | 2010 |
| Two-dimensional semiconductor alloys: Monolayer Mo1− xWxSe2 S Tongay, DS Narang, J Kang, W Fan, C Ko, AV Luce, KX Wang, J Suh, ... Applied Physics Letters 104 (1), 2014 | 200 | 2014 |
| Nanoscale imaging and control of resistance switching in VO2 at room temperature J Kim, C Ko, A Frenzel, S Ramanathan, JE Hoffman Applied Physics Letters 96 (21), 2010 | 176 | 2010 |
| Observation of electric field-assisted phase transition in thin film vanadium oxide in a metal-oxide-semiconductor device geometry C Ko, S Ramanathan Applied Physics Letters 93 (25), 2008 | 173 | 2008 |
| Ferroelectrically gated atomically thin transition-metal dichalcogenides as nonvolatile memory C Ko, Y Lee, Y Chen, J Suh, D Fu, A Suslu, S Lee, JD Clarkson, HS Choe, ... Adv. Mater 28 (15), 2923-2930, 2016 | 164 | 2016 |
| Work function of vanadium dioxide thin films across the metal-insulator transition and the role of surface nonstoichiometry C Ko, Z Yang, S Ramanathan ACS applied materials & interfaces 3 (9), 3396-3401, 2011 | 155 | 2011 |
Shriram RamanathanRutgers在 rutgers.edu 的电子邮件经过验证
