A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors T Ghani, M Armstrong, C Auth, M Bost, P Charvat, G Glass, T Hoffmann, ...
IEEE International Electron Devices Meeting 2003, 11.6. 1-11.6. 3, 2003
1054 2003 A 90-nm Logic Technology Featuring Strained-Silicon S Thompson, M Armstrong, C Auth, M Alavi, M Buehler, R Chau, G Glass
IEEE TRANSACTIONS ON ELECTRON DEVICES 51 (11), 1790, 2004
915 2004 A Logic Nanotechnology Featuring Strained-Silicon S Thompson, M Armstrong, C Auth, S Cea, R Chau, G Glass
IEEE ELECTRON DEVICE LETTERS 25 (4), 191, 2004
686 2004 45nm High-k + Metal Gate Strain-Enhanced Transistors C Auth, A Cappellani, JS Chun, A Dalis, A Davis, T Ghani, G Glass
2008 Symposium on VLSI Technology Digest of Technical Papers 978, 2008
572 2008 A 90 nm logic technology featuring 50 nm strained silicon channel transistors, 7 layers of Cu interconnects, low k ILD, and 1/spl mu/m/sup 2/SRAM cell S Thompson, N Anand, M Armstrong, C Auth, B Arcot, M Alavi, P Bai, ...
Digest. International Electron Devices Meeting,, 61-64, 2002
452 2002 Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si (001). A Vailionis, G G
Physical review letters 85 (17), 2000
249 2000 Ultrahigh B doping (<~ 10 22 cm− 3) during Si (001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport G Glass, H Kim, P Desjardins, N Taylor, T Spila, Q Lu, JE Greene
Physical Review B 61 (11), 7628, 2000
49 2000 Electrically active and inactive B lattice sites in ultrahighly B doped Si (001): An X-ray near-edge absorption fine-structure and high-resolution diffraction study A Vailionis, G Glass, P Desjardins, DG Cahill, JE Greene
Physical review letters 82 (22), 4464, 1999
46 1999 Growth of N Taylor, H Kim, T Spila, JA Eades, G Glass, P Desjardins, JE Greene
Journal of applied physics 85 (1), 501-511, 1999
12 1999 Atomic-Level Control during Film Growth under Highly Kinetically Constrained Conditions: H Mediation and Ultrahigh Doping during Si1 xGex Gas Source Epitaxy JE Greene
MRS BULLETIN, 2001
10 2001 
Joe GreeneProfessor of Materials Science and Physics, University of IllinoisBestätigte E-Mail-Adresse bei uiuc.edu
