Attilio Belmonte
Attilio Belmonte
Senior Scientist, imec
Verified email at imec.be
Title
Cited by
Cited by
Year
Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices
U Celano, L Goux, A Belmonte, K Opsomer, A Franquet, A Schulze, ...
Nano letters 14 (5), 2401-2406, 2014
2792014
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
2422019
Intrinsic switching variability in HfO2RRAM
A Fantini, L Goux, R Degraeve, DJ Wouters, N Raghavan, G Kar, ...
2013 5th IEEE International Memory Workshop, 30-33, 2013
1742013
Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current
YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ...
2013 IEEE International Electron Devices Meeting, 10.1. 1-10.1. 4, 2013
1082013
A Thermally Stable and High-Performance 90-nm-Based 1T1R CBRAM Cell
A Belmonte, W Kim, BT Chan, N Heylen, A Fantini, M Houssa, M Jurczak, ...
IEEE transactions on electron devices 60 (11), 3690-3695, 2013
732013
Causes and consequences of the stochastic aspect of filamentary RRAM
R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, B Govoreanu, ...
Microelectronic Engineering 147, 171-175, 2015
622015
Understanding the dual nature of the filament dissolution in conductive bridging devices
U Celano, L Goux, A Belmonte, K Opsomer, R Degraeve, C Detavernier, ...
The journal of physical chemistry letters 6 (10), 1919-1924, 2015
512015
RRAMs based on anionic and cationic switching: a short overview
S Clima, K Sankaran, YY Chen, A Fantini, U Celano, A Belmonte, L Zhang, ...
physica status solidi (RRL)–Rapid Research Letters 8 (6), 501-511, 2014
422014
Influence of carbon alloying on the thermal stability and resistive switching behavior of copper-telluride based CBRAM cells
W Devulder, K Opsomer, F Seidel, A Belmonte, R Muller, B De Schutter, ...
ACS applied materials & interfaces 5 (15), 6984-6989, 2013
412013
Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
U Celano, G Giammaria, L Goux, A Belmonte, M Jurczak, W Vandervorst
Nanoscale 8 (29), 13915-13923, 2016
382016
90nm W\Al2O3\TiW\Cu 1T1R CBRAM cell showing low-power, fast and disturb-free operation
A Belmonte, W Kim, BT Chan, N Heylen, A Fantini, M Houssa, M Jurczak, ...
2013 5th IEEE International Memory Workshop, 26-29, 2013
382013
Hourglass concept for RRAM: a dynamic and statistical device model
R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, YY Chen, ...
Proceedings of the 21th International Symposium on the Physical and Failure …, 2014
372014
Origin of the current discretization in deep reset states of an Al2O3/Cu-based conductive-bridging memory, and impact on state level and variability
A Belmonte, R Degraeve, A Fantini, W Kim, M Houssa, M Jurczak, L Goux
Applied Physics Letters 104 (23), 233508, 2014
332014
Impact of bottom electrode and film formation on physical and electrical properties of metal-insulator-metal capacitors
MA Pawlak, B Kaczer, MS Kim, M Popovici, J Swerts, WC Wang, ...
Applied Physics Letters 98 (18), 182902, 2011
332011
Conductive-AFM tomography for 3D filament observation in resistive switching devices
U Celano, L Goux, A Belmonte, A Schulze, K Opsomer, C Detavernier, ...
2013 IEEE International Electron Devices Meeting, 21.6. 1-21.6. 4, 2013
312013
Switching mechanism and reverse engineering of low-power Cu-based resistive switching devices
U Celano, L Goux, K Opsomer, A Belmonte, M Iapichino, C Detavernier, ...
Nanoscale 5 (22), 11187-11192, 2013
302013
Tailoring switching and endurance / retention reliability characteristics of HfO2 / Hf RRAM with Ti, Al, Si dopants
YY Chen, R Roelofs, A Redolfi, R Degraeve, D Crotti, A Fantini, S Clima, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
282014
Operating-current dependence of the Cu-mobility requirements in oxide-based conductive-bridge RAM
A Belmonte, U Celano, R Degraeve, A Fantini, A Redolfi, W Vandervorst, ...
IEEE Electron Device Letters 36 (8), 775-777, 2015
262015
Scanning probe microscopy as a scalpel to probe filament formation in conductive bridging memory devices
U Celano, L Goux, K Opsomer, M Iapichino, A Belmonte, A Franquet, ...
Microelectronic engineering 120, 67-70, 2014
252014
Analysis of the Excellent Memory Disturb Characteristics of a Hourglass-Shaped Filament in Al2O3/Cu-Based CBRAM Devices
A Belmonte, U Celano, A Redolfi, A Fantini, R Muller, W Vandervorst, ...
IEEE Transactions on Electron Devices 62 (6), 2007-2013, 2015
242015
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