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CHI Dongzhi
CHI Dongzhi
Principal Scientist, Institute of Materials Research and Engineering
Verified email at imre.a-star.edu.sg
Title
Cited by
Cited by
Year
Enhancing multiphoton upconversion through energy clustering at sublattice level
J Wang, R Deng, MA MacDonald, B Chen, J Yuan, F Wang, D Chi, ...
Nature materials 13 (2), 157-162, 2014
5682014
Growth of wafer-scale MoS 2 monolayer by magnetron sputtering
J Tao, J Chai, X Lu, LM Wong, TI Wong, J Pan, Q Xiong, D Chi, S Wang
Nanoscale 7 (6), 2497-2503, 2015
2692015
Sol–gel deposited Cu 2 O and CuO thin films for photocatalytic water splitting
YF Lim, CS Chua, CJJ Lee, D Chi
Physical Chemistry Chemical Physics 16 (47), 25928-25934, 2014
2522014
Novel epitaxial nickel aluminide-silicide with low Schottky-barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs
RTP Lee, TY Liow, KM Tan, AEJ Lim, CS Ho, KM Hoe, MY Lai, ...
2007 IEEE Symposium on VLSI Technology, 108-109, 2007
2222007
Artificial synapses based on multiterminal memtransistors for neuromorphic application
L Wang, W Liao, SL Wong, ZG Yu, S Li, YF Lim, X Feng, WC Tan, ...
Advanced Functional Materials 29 (25), 1901106, 2019
2162019
CVD Growth of MoS2‐based Two‐dimensional Materials
HF Liu, SL Wong, DZ Chi
Chemical Vapor Deposition 21 (10-11-12), 241-259, 2015
1952015
Lanthanide-doped upconversion materials: emerging applications for photovoltaics and photocatalysis
W Yang, X Li, D Chi, H Zhang, X Liu
Nanotechnology 25 (48), 482001, 2014
1842014
The organic–2D transition metal dichalcogenide heterointerface
YL Huang, YJ Zheng, Z Song, D Chi, ATS Wee, SY Quek
Chemical Society Reviews 47 (9), 3241-3264, 2018
1822018
Nanocrystal engineering of sputter-grown CuO photocathode for visible-light-driven electrochemical water splitting
S Masudy-Panah, R Siavash Moakhar, CS Chua, HR Tan, TI Wong, D Chi, ...
ACS applied materials & interfaces 8 (2), 1206-1213, 2016
1692016
High-throughput screening of transition metal single atom catalysts anchored on molybdenum disulfide for nitrogen fixation
T Yang, TT Song, J Zhou, S Wang, D Chi, L Shen, M Yang, YP Feng
Nano Energy 68, 104304, 2020
1612020
A Fully Printed Flexible MoS2 Memristive Artificial Synapse with Femtojoule Switching Energy
X Feng, Y Li, L Wang, S Chen, ZG Yu, WC Tan, N Macadam, G Hu, ...
Advanced Electronic Materials 5 (12), 1900740, 2019
1582019
Excellent c-Si surface passivation by low-temperature atomic layer deposited titanium oxide
B Liao, B Hoex, AG Aberle, D Chi, CS Bhatia
Applied Physics Letters 104 (25), 2014
1552014
Vapor-phase growth and characterization of Mo 1− x W x S 2 (0≤ x≤ 1) atomic layers on 2-inch sapphire substrates
H Liu, KKA Antwi, S Chua, D Chi
Nanoscale 6 (1), 624-629, 2014
1512014
New salicidation technology with Ni (Pt) alloy for MOSFETs
PS Lee, KL Pey, D Mangelinck, J Ding, DZ Chi, L Chan
IEEE Electron Device Letters 22 (12), 568-570, 2001
1332001
Microstructural characteristics and mechanical properties of carbon nanotube reinforced Inconel 625 parts fabricated by selective laser melting
P Wang, B Zhang, CC Tan, S Raghavan, YF Lim, CN Sun, J Wei, D Chi
Materials & Design 112, 290-299, 2016
1312016
Far out-of-equilibrium spin populations trigger giant spin injection into atomically thin MoS2
L Cheng, X Wang, W Yang, J Chai, M Yang, M Chen, Y Wu, X Chen, ...
Nature Physics 15, 347–351, 2019
1302019
Assignment of deep levels causing yellow luminescence in GaN
CB Soh, SJ Chua, HF Lim, DZ Chi, S Tripathy, W Liu
Journal of applied physics 96 (3), 1341-1347, 2004
1302004
Piezotronic effect on the transport properties of GaN nanobelts for active flexible electronics
R Yu, L Dong, C Pan, S Niu, H Liu, W Liu, S Chua, D Chi, ZL Wang
Advanced Materials 24 (26), 3532-3537, 2012
1262012
Thermal stability of on Si
HY Yu, N Wu, MF Li, C Zhu, BJ Cho, DL Kwong, CH Tung, JS Pan, ...
Applied Physics Letters 81 (19), 3618-3620, 2002
1252002
Direct n- to p-Type Channel Conversion in Monolayer/Few-Layer WS2 Field-Effect Transistors by Atomic Nitrogen Treatment
B Tang, ZG Yu, L Huang, J Chai, SL Wong, J Deng, W Yang, H Gong, ...
ACS nano 12 (3), 2506-2513, 2018
1142018
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