Gengchiau Liang

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Xiao GongNational University of SingaporeVerified email at nus.edu.sg
Mansoor B. A. JalilNational University of SingaporeVerified email at nus.edu.sg
Zhifeng ZhuSchool of Information Science and Technology, ShanghaiTech UniversityVerified email at shanghaitech.edu.cn
avik W ghoshProfessor, University of Virginia, Electrical EngineeringVerified email at virginia.edu
Seng Ghee TanTheoretical Physicist (Applied)Verified email at dsi.a-star.edu.sg
Mark LundstromProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
Hyunsoo YangElectrical and Computer Engineering, National University of SingaporeVerified email at nus.edu.sg
Yuan DONGInstitute of Microelectronics (IME, A*Star), and National University of Singapore (NUS)Verified email at u.nus.edu
Dmitri E. NikonovDistinguished Engineer, Kepler ComputingVerified email at intel.com
Neophytos NeophytouSchool of Engineering, University of WarwickVerified email at warwick.ac.uk
Supriyo DattaProfessor, Purdue UniversityVerified email at purdue.edu
Gaurav GuptaSpin DevicesVerified email at spindevices.com
Yuan Ping FengDepartment of Physics, National University of SingaporeVerified email at nus.edu.sg
Ganesh SamudraAssociate Professor, National University of SingaporeVerified email at nus.edu.sg
Can YesilyurtNanoelectronics Research CenterVerified email at nanoelectronicsresearch.center
MINGGANG ZENGInstitute for Infocomm Research (I2R), Agency for Science, Technology and Research (A*STARVerified email at i2r.a-star.edu.sg
Jian-Sheng WangDepartment of Physics, National University of SingaporeVerified email at nus.edu.sg
Jie XiangWolf Greenfield & Sacks, P.C.Verified email at wolfgreenfield.com
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
Xin Luo （罗鑫）Sun Yat-Sen UniversityVerified email at sysu.edu.cn

Gengchiau Liang

National Yang Ming Chiao Tung University

Verified email at nycu.edu.tw - Homepage

Nanoelectronics Computational Nanoelectronics Nanodevice modeling


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Performance projections for ballistic graphene nanoribbon field-effect transistors G Liang, N Neophytou, DE Nikonov, MS Lundstrom IEEE Transactions on Electron Devices 54 (4), 677-682, 2007	321	2007
Thermoelectric performance of mx2 (m= mo, w; x= s, se) monolayers W Huang, H Da, G Liang Journal of Applied Physics 113 (10), 2013	289	2013
Silicon-based molecular electronics T Rakshit, GC Liang, AW Ghosh, S Datta Nano Letters 4 (10), 1803-1807, 2004	257	2004
All-electric magnetization switching and Dzyaloshinskii–Moriya interaction in WTe₂/ferromagnet heterostructures S Shi, S Liang, Z Zhu, K Cai, SD Pollard, Y Wang, J Wang, Q Wang, P He, ... Nature nanotechnology 14 (10), 945-949, 2019	242	2019
Theoretical study of thermoelectric properties of few-layer MoS 2 and WSe 2 W Huang, X Luo, CK Gan, SY Quek, G Liang Physical Chemistry Chemical Physics 16 (22), 10866-10874, 2014	226	2014
Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed Y Hu, J Xiang, G Liang, H Yan, CM Lieber Nano letters 8 (3), 925-930, 2008	210	2008
Performance analysis of a Ge/Si core/shell nanowire field-effect transistor G Liang, J Xiang, N Kharche, G Klimeck, CM Lieber, M Lundstrom Nano letters 7 (3), 642-646, 2007	207	2007
Graphene-based spin caloritronics M Zeng, Y Feng, G Liang Nano letters 11 (3), 1369-1373, 2011	204	2011
Ultrafast and energy-efficient spin–orbit torque switching in compensated ferrimagnets K Cai, Z Zhu, JM Lee, R Mishra, L Ren, SD Pollard, P He, G Liang, KL Teo, ... Nature Electronics 3 (1), 37-42, 2020	201	2020
Disorder enhances thermoelectric figure of merit in armchair graphane nanoribbons X Ni, G Liang, JS Wang, B Li Applied Physics Letters 95 (19), 2009	176	2009
High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection S Lukman, L Ding, L Xu, Y Tao, AC Riis-Jensen, G Zhang, QYS Wu, ... Nature nanotechnology 15 (8), 675-682, 2020	166	2020
Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation G Liang, N Neophytou, MS Lundstrom, DE Nikonov Journal of Applied Physics 102 (5), 2007	156	2007
Electrostatic potential profiles of molecular conductors GC Liang, AW Ghosh, M Paulsson, S Datta Physical Review B 69 (11), 115302, 2004	151	2004
Room-temperature nonlinear Hall effect and wireless radiofrequency rectification in Weyl semimetal TaIrTe₄ D Kumar, CH Hsu, R Sharma, TR Chang, P Yu, J Wang, G Eda, G Liang, ... Nature Nanotechnology 16 (4), 421-425, 2021	149	2021
Single atomically sharp lateral monolayer p‐n heterojunction solar cells with extraordinarily high power conversion efficiency ML Tsai, MY Li, JRD Retamal, KT Lam, YC Lin, K Suenaga, LJ Chen, ... Advanced Materials 29 (32), 1701168, 2017	138	2017
Contact effects in graphene nanoribbon transistors G Liang, N Neophytou, MS Lundstrom, DE Nikonov Nano letters 8 (7), 1819-1824, 2008	99	2008
An ab initio study on energy gap of bilayer graphene nanoribbons with armchair edges KT Lam, G Liang Applied Physics Letters 92 (22), 2008	92	2008
Suppression of dark current in germanium-tin on silicon pin photodiode by a silicon surface passivation technique Y Dong, W Wang, D Lei, X Gong, Q Zhou, SY Lee, WK Loke, SF Yoon, ... Optics express 23 (14), 18611-18619, 2015	88	2015
A simulation study of graphene-nanoribbon tunneling FET with heterojunction channel KT Lam, D Seah, SK Chin, SB Kumar, G Samudra, YC Yeo, G Liang IEEE Electron Device Letters 31 (6), 555-557, 2010	82	2010
Theoretical study on thermoelectric properties of kinked graphene nanoribbons W Huang, JS Wang, G Liang Physical Review B—Condensed Matter and Materials Physics 84 (4), 045410, 2011	79	2011

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