| Ultrafast formation of interlayer hot excitons in atomically thin MoS 2/WS 2 heterostructures H Chen*, X Wen*, J Zhang*, T Wu, Y Gong, X Zhang, J Yuan, C Yi, J Lou, ... Nature communications 7, 12512, 2016 | 353 | 2016 |
| Oxygen-assisted chemical vapor deposition growth of large single-crystal and high-quality monolayer MoS2 W Chen*, J Zhao*, J Zhang*, L Gu, Z Yang, X Li, H Yu, X Zhu, R Yang, ... Journal of the American Chemical Society 137 (50), 15632-15635, 2015 | 314 | 2015 |
| Scalable Growth of High-Quality Polycrystalline MoS2 Monolayers on SiO2 with Tunable Grain Sizes J Zhang, H Yu, W Chen, X Tian, D Liu, M Cheng, G Xie, W Yang, R Yang, ... ACS nano 8 (6), 6024-6030, 2014 | 299 | 2014 |
| Argon Plasma Induced Phase Transition in Monolayer MoS2 J Zhu, Z Wang, H Yu, N Li, J Zhang, JL Meng, M Liao, J Zhao, X Lu, L Du, ... Journal of the American Chemical Society 139 (30), 10216-10219, 2017 | 288 | 2017 |
| Boundary activated hydrogen evolution reaction on monolayer MoS2 J Zhu, ZC Wang, H Dai, Q Wang, R Yang, H Yu, M Liao, J Zhang, W Chen, ... Nature communications 10 (1), 1348, 2019 | 232 | 2019 |
| Observation of Strong Interlayer Coupling in MoS2/WS2 Heterostructures J Zhang, J Wang, P Chen, Y Sun, S Wu, Z Jia, X Lu, H Yu, W Chen, J Zhu, ... Advanced Materials 28 (10), 1950-1956, 2016 | 217 | 2016 |
| Graphene‐Contacted Ultrashort Channel Monolayer MoS2 Transistors L Xie, M Liao, S Wang, H Yu, L Du, J Tang, J Zhao, J Zhang, P Chen, X Lu, ... Advanced Materials 29 (37), 1702522, 2017 | 192 | 2017 |
| Thermally induced graphene rotation on hexagonal boron nitride D Wang, G Chen, C Li, M Cheng, W Yang, S Wu, G Xie, J Zhang, J Zhao, ... Physical review letters 116 (12), 126101, 2016 | 147 | 2016 |
| Precisely Aligned Monolayer MoS2 Epitaxially Grown on h‐BN basal Plane H Yu, Z Yang, L Du, J Zhang, J Shi, W Chen, P Chen, M Liao, J Zhao, ... Small 13 (7), 1603005, 2017 | 88 | 2017 |
| Gate tunable MoS2–black phosphorus heterojunction devices P Chen, J Xiang, H Yu, J Zhang, G Xie, S Wu, X Lu, G Wang, J Zhao, ... 2D Materials 2 (3), 034009, 2015 | 61 | 2015 |
| Gate tunable WSe 2–BP van der Waals heterojunction devices P Chen, TT Zhang, J Zhang, J Xiang, H Yu, S Wu, X Lu, G Wang, F Wen, ... Nanoscale 8 (6), 3254-3258, 2016 | 55 | 2016 |
| A general route towards defect and pore engineering in graphene G Xie, R Yang, P Chen, J Zhang, X Tian, S Wu, J Zhao, M Cheng, W Yang, ... Small 10 (11), 2280-2284, 2014 | 55 | 2014 |
| Engineering Valley Polarization of Monolayer WS2: A Physical Doping Approach S Feng, C Cong, S Konabe, J Zhang, J Shang, Y Chen, C Zou, B Cao, ... Small 15 (12), 1805503, 2019 | 49 | 2019 |
| Rolling Up a Monolayer MoS2 Sheet J Meng, G Wang, X Li, X Lu, J Zhang, H Yu, W Chen, L Du, M Liao, J Zhao, ... Small 12 (28), 3770-3774, 2016 | 48 | 2016 |
| Two-step growth of graphene with separate controlling nucleation and edge growth directly on SiO2 substrates D Liu, W Yang, L Zhang, J Zhang, J Meng, R Yang, G Zhang, D Shi Carbon 72, 387-392, 2014 | 48 | 2014 |
| In‐Plane Anisotropic Thermal Conductivity of Few‐Layered Transition Metal Dichalcogenide Td‐WTe2 Y Chen, B Peng, C Cong, J Shang, L Wu, W Yang, J Zhou, P Yu, H Zhang, ... Advanced Materials 31 (7), 1804979, 2019 | 43 | 2019 |
| A route toward digital manipulation of water nanodroplets on surfaces M Cheng, D Wang, Z Sun, J Zhao, R Yang, G Wang, W Yang, G Xie, ... ACS nano 8 (4), 3955-3960, 2014 | 35 | 2014 |
| Enhancement of carrier mobility in MoS2 field effect transistors by a SiO2 protective layer PZ Shao, HM Zhao, HW Cao, XF Wang, Y Pang, YX Li, NQ Deng, J Zhang, ... Applied Physics Letters 108 (20), 203105, 2016 | 34 | 2016 |
| Enhancing and controlling valley magnetic response in MoS2/WS2 heterostructures by all-optical route J Zhang, L Du, S Feng, RW Zhang, B Cao, C Zou, Y Chen, M Liao, ... Nature Communications 10 (1), 4226, 2019 | 32 | 2019 |
| Magnetotransport properties of graphene nanoribbons with zigzag edges S Wu, B Liu, C Shen, S Li, X Huang, X Lu, P Chen, G Wang, D Wang, ... Physical Review Letters 120 (21), 216601, 2018 | 28 | 2018 |
Guangyu ZhangInstitute of Physics, CASVerified email at aphy.iphy.ac.cn
