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Christian Wenger
Christian Wenger
IHP GmbH - Leibniz institute for innovative microelectronics
Verified email at ihp-microelectronics.com
Title
Cited by
Cited by
Year
Residual metallic contamination of transferred chemical vapor deposited graphene
G Lupina, J Kitzmann, I Costina, M Lukosius, C Wenger, A Wolff, S Vaziri, ...
ACS nano 9 (5), 4776-4785, 2015
3152015
Impact of Temperature on the Resistive Switching Behavior of Embedded -Based RRAM Devices
C Walczyk, D Walczyk, T Schroeder, T Bertaud, M Sowinska, M Lukosius, ...
IEEE transactions on electron devices 58 (9), 3124-3131, 2011
2752011
Model for the Resistive Switching Effect in MIM Structures Based on the Transmission Properties of Narrow Constrictions
EA Miranda, C Walczyk, C Wenger, T Schroeder
IEEE Electron Device Letters 31 (6), 609-611, 2010
2152010
Multilevel HfO2-based RRAM devices for low-power neuromorphic networks
V Milo, C Zambelli, P Olivo, E Pérez, M K Mahadevaiah, O G Ossorio, ...
APL materials 7 (8), 2019
1712019
Filament growth and resistive switching in hafnium oxide memristive devices
S Dirkmann, J Kaiser, C Wenger, T Mussenbrock
ACS applied materials & interfaces 10 (17), 14857-14868, 2018
1432018
Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications
C Walczyk, C Wenger, R Sohal, M Lukosius, A Fox, J Dąbrowski, ...
Journal of Applied Physics 105 (11), 2009
1382009
Magnetic penetration depth and condensate density of cuprate high- superconductors determined by muon-spin-rotation experiments
C Bernhard, C Niedermayer, U Binninger, A Hofer, C Wenger, JL Tallon, ...
Physical Review B 52 (14), 10488, 1995
1341995
Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach
G Capellini, G Kozlowski, Y Yamamoto, M Lisker, C Wenger, G Niu, ...
Journal of Applied Physics 113 (1), 2013
1162013
Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOx based Memristive Devices
SU Sharath, S Vogel, L Molina‐Luna, E Hildebrandt, C Wenger, J Kurian, ...
Advanced Functional Materials 27 (32), 1700432, 2017
1152017
Toward a Reliable Synaptic Simulation Using Al-Doped HfO2 RRAM
S Roy, G Niu, Q Wang, Y Wang, Y Zhang, H Wu, S Zhai, P Shi, S Song, ...
ACS applied materials & interfaces 12 (9), 10648-10656, 2020
932020
Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance
G Niu, P Calka, M Auf der Maur, F Santoni, S Guha, M Fraschke, ...
Scientific reports 6 (1), 25757, 2016
922016
Structure and thermal stability of graded Ta–TaN diffusion barriers between Cu and SiO2
R Hübner, M Hecker, N Mattern, V Hoffmann, K Wetzig, C Wenger, ...
Thin Solid Films 437 (1-2), 248-256, 2003
872003
Titanium-added praseodymium silicate high-k layers on Si (001)
T Schroeder, G Lupina, J Dabrowski, A Mane, C Wenger, G Lippert, ...
Applied Physics Letters 87 (2), 2005
862005
Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al: HfO2/TiN RRAMs
E Pérez, D Maldonado, C Acal, JE Ruiz-Castro, FJ Alonso, AM Aguilera, ...
Microelectronic Engineering 214, 104-109, 2019
802019
Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells
D Walczyk, C Walczyk, T Schroeder, T Bertaud, M Sowińska, M Lukosius, ...
Microelectronic Engineering 88 (7), 1133-1135, 2011
802011
Accurate program/verify schemes of resistive switching memory (RRAM) for in-memory neural network circuits
V Milo, A Glukhov, E Pérez, C Zambelli, N Lepri, MK Mahadevaiah, ...
IEEE Transactions on Electron Devices 68 (8), 3832-3837, 2021
762021
Electronic properties of graphene/p-silicon Schottky junction
G Luongo, A Di Bartolomeo, F Giubileo, CA Chavarin, C Wenger
Journal of Physics D: Applied Physics 51 (25), 255305, 2018
752018
Microscopic model for the nonlinear behavior of high-k metal-insulator-metal capacitors
C Wenger, G Lupina, M Lukosius, O Seifarth, HJ Müssig, S Pasko, C Lohe
Journal of Applied Physics 103 (10), 2008
712008
Interface-engineered reliable HfO 2-based RRAM for synaptic simulation
Q Wang, G Niu, S Roy, Y Wang, Y Zhang, H Wu, S Zhai, W Bai, P Shi, ...
Journal of Materials Chemistry C 7 (40), 12682-12687, 2019
692019
Impact of intercell and intracell variability on forming and switching parameters in RRAM arrays
A Grossi, D Walczyk, C Zambelli, E Miranda, P Olivo, V Stikanov, A Feriani, ...
IEEE Transactions on Electron Devices 62 (8), 2502-2509, 2015
692015
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