Nouman Zia
Nouman Zia
Tampere University
Verified email at tuni.fi - Homepage
Title
Cited by
Cited by
Year
High power (60 mW) GaSb-based 1.9 μm superluminescent diode with cavity suppression element
N Zia, J Viheriälä, R Koskinen, A Aho, S Suomalainen, M Guina
Applied Physics Letters 109 (23), 231102, 2016
212016
GaSb superluminescent diodes with broadband emission at 2.55 μm
N Zia, J Viheriälä, E Koivusalo, H Virtanen, A Aho, S Suomalainen, ...
Applied Physics Letters 112 (5), 051106, 2018
162018
Multi-wavelength mid-IR light source for gas sensing
P Karioja, T Alajoki, M Cherchi, J Ollila, M Harjanne, N Heinilehto, ...
Photonic Instrumentation Engineering IV 10110, 101100P, 2017
62017
Fabrication and characterization of broadband superluminescent diodes for 2 µm wavelength
N Zia, J Viheriälä, R Koskinen, M Koskinen, S Suomalainen, M Guina
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State …, 2016
62016
High-power single mode GaSb-based 2 μm superluminescent diode with double-pass gain
N Zia, J Viheriälä, E Koivusalo, M Guina
Applied Physics Letters 115 (23), 231106, 2019
32019
High power GaInNAs superluminescent diodes emitting over 400 mW in the 1.2 μm wavelength range
AT Aho, J Viheriälä, H Virtanen, N Zia, R Isoaho, M Guina
Applied Physics Letters 115 (8), 081104, 2019
32019
GaSb diode lasers tunable around 2.6 μm using silicon photonics resonators or external diffractive gratings
SP Ojanen, J Viheriälä, M Cherchi, N Zia, E Koivusalo, P Karioja, M Guina
Applied Physics Letters 116 (8), 081105, 2020
22020
Integrated multi-wavelength mid-IR light source for gas sensing
P Karioja, T Alajoki, M Cherchi, J Ollila, M Harjanne, N Heinilehto, ...
Next-Generation Spectroscopic Technologies XI 10657, 106570A, 2018
22018
GaSb-based 2.55 µm External Cavity Diode Lasers Employing Ruled Diffraction Gratings and External Silicon Photonics Vernier Reflectors
SP Ojanen, J Viheriälä, M Cherchi, N Zia, E Koivusalo, P Karioja, M Guina
The European Conference on Lasers and Electro-Optics, cb_p_11, 2019
12019
Widely tunable hybrid lasers at 2.6 µm wavelength based on micron-scale silicon-on-insulator waveguide technology and GaSb gain chips
J Viheriälä, SP Ojanen, E Koivusalo, N Zia, MT Harjanne, M Cherchi, ...
Integrated Optics: Devices, Materials, and Technologies XXV 11689, 116890U, 2021
2021
Monolithic GaSb-based passively mode-locked laser
N Zia, J Viheriala, T Uusitalo, E Koivusalo, M Guina
2020 European Conference on Optical Communications (ECOC), 1-3, 2020
2020
Widely Tunable 2.6 µm GaSb Diode Lasers Utilizing Diffraction Gratings or Silicon Photonics Reflectors
SP Ojanen, J Viheriälä, M Cherchi, N Zia, E Koivusalo, P Karioja, M Guina
European Conference on Integrated Optics 2020, 2020
2020
Progress in high-power broadband GaSb-based superluminescent diodes emitting at 2-3 um (Conference Presentation)
N Zia, J Viheriala, E Koivusalo, A Aho, M Guina
Light-Emitting Devices, Materials, and Applications XXIV 11302, 1130210, 2020
2020
Precise length definition of active GaAs-based optoelectronic devices for low-loss silicon photonics integration
H Tuorila, J Viheriälä, N Zia, M Cherchi, M Harjanne, R Isoaho, T Aalto, ...
Optics letters 45 (4), 943-946, 2020
2020
Design strategies for power scaling of GaSb-based superluminescent diodes for 2–3 μm wavelength range
N Zia, J Viheriälä, E Koivusalo, A Aho, M Guina
2019 Conference on Lasers and Electro-Optics Europe & European Quantum …, 2019
2019
1.3 µm U-bend traveling wave SOA devices for high efficiency coupling to silicon photonics
J Viheriälä, H Tuorila, N Zia, M Cherchi, T Aalto, M Guina
Silicon Photonics XIV 10923, 109230E, 2019
2019
Compact tunable 2.55 µm laser employing GaSb-based gain waveguide and silicon photonics Vernier reflectors
SP Ojanen, J Viheriälä, M Cherchi, N Zia, E Koivusalo, P Karioja, M Guina
Optics and Photonics Days 2019, 2019
2019
GaAs-based gain waveguides with U-bend architecture enabling low loss and high yield hybrid integration on silicon photonic circuits
H Tuorila, J Viheriälä, N Zia, M Cherchi, T Aalto, M Guina
European conference on integrated optics 2019, 2019
2019
Broadband GaSb Superluminescent Diode Emitting at 2.65 µm
E Koivusalo, N Zia, H Tuorila, S Suomalainen, R Koskinen, J Viheriälä, ...
ICMBE 2018-the 20th International Conference on Molecular beam Epitaxy, 2018
2018
High power GaSb superluminescent diodes with broadband emission around 2.55 µm (Conference Presentation)
N Zia, J Viheriala, E Koivusalo, A Aho, S Suomalainen, M Guina
Semiconductor Lasers and Laser Dynamics VIII 10682, 1068215, 2018
2018
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