| A Distributed Model for Border Traps in MOS Devices Y Yuan, L Wang, B Yu, B Shin, J Ahn, PC McIntyre, PM Asbeck, ... IEEE Electron Device Letters 32 (4), 485-487, 2011 | 212 | 2011 |
| A Distributed Bulk-Oxide Trap Model forInGaAs MOS Devices Y Yuan, B Yu, J Ahn, PC McIntyre, PM Asbeck, MJW Rodwell, Y Taur IEEE Transactions on Electron Devices 59 (8), 2100-2106, 2012 | 161 | 2012 |
| New method for determining flat-band voltage in high mobility semiconductors R Winter, J Ahn, PC McIntyre, M Eizenberg Journal of Vacuum Science & Technology B 31 (3), 2013 | 120 | 2013 |
| Hybrid carbon hardmask for lateral hardmask recess reduction TJ Kwon, R Cheng, AB Mallick, EX Ping, AHN Jaesoo US Patent 9,991,118, 2018 | 91 | 2018 |
| Interface-State Modeling of –InGaAs MOS From Depletion to Inversion HP Chen, Y Yuan, B Yu, J Ahn, PC McIntyre, PM Asbeck, MJW Rodwell, ... IEEE Transactions on Electron Devices 59 (9), 2383-2389, 2012 | 91 | 2012 |
| A study on practically unlimited endurance of STT-MRAM JJ Kan, C Park, C Ching, J Ahn, Y Xie, M Pakala, SH Kang IEEE Transactions on Electron Devices 64 (9), 3639-3646, 2017 | 89 | 2017 |
| Systematic validation of 2x nm diameter perpendicular MTJ arrays and MgO barrier for sub-10 nm embedded STT-MRAM with practically unlimited endurance JJ Kan, C Park, C Ching, J Ahn, L Xue, R Wang, A Kontos, S Liang, ... 2016 IEEE International Electron Devices Meeting (IEDM), 27.4. 1-27.4. 4, 2016 | 64 | 2016 |
| Method of forming magnetic tunneling junctions M Pakala, M Balseanu, J Germain, AHN Jaesoo, XUE Lin US Patent 9,564,582, 2017 | 58 | 2017 |
| Hard mask for patterning magnetic tunnel junctions XUE Lin, M Pakala, H Chen, AHN Jaesoo US Patent App. 14/755,964, 2016 | 56 | 2016 |
| Arsenic decapping and pre-atomic layer deposition trimethylaluminum passivation of Al2O3/InGaAs(100) interfaces J Ahn, T Kent, E Chagarov, K Tang, AC Kummel, PC McIntyre Applied Physics Letters 103 (7), 071602, 2013 | 55 | 2013 |
| Electron Mobility in Surface- and Buried-Channel FlatbandMOSFETs With ALDGate Dielectric SJ Bentley, M Holland, X Li, GW Paterson, H Zhou, O Ignatova, ... IEEE Electron Device Letters 32 (4), 494-496, 2011 | 49 | 2011 |
| Systematic optimization of 1 Gbit perpendicular magnetic tunnel junction arrays for 28 nm embedded STT-MRAM and beyond C Park, JJ Kan, C Ching, J Ahn, L Xue, R Wang, A Kontos, S Liang, ... 2015 IEEE International Electron Devices Meeting (IEDM), 26.2. 1-26.2. 4, 2015 | 48 | 2015 |
| Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices J Ahn, I Geppert, M Gunji, M Holland, I Thayne, M Eizenberg, PC McIntyre Applied Physics Letters 99 (23), 2011 | 40 | 2011 |
| Effects of oxide thickness and temperature on dispersions in InGaAs MOS CV characteristics HP Chen, J Ahn, PC McIntyre, Y Taur Journal of Vacuum Science & Technology B 32 (3), 2014 | 28 | 2014 |
| Comparison of bulk-oxide trap models: lumped versus distributed circuit HP Chen, J Ahn, PC McIntyre, Y Taur IEEE transactions on electron devices 60 (11), 3920-3924, 2013 | 26 | 2013 |
| Low RA magnetic tunnel junction arrays in conjunction with low switching current and high breakdown voltage for STT-MRAM at 10 nm and beyond C Park, H Lee, C Ching, J Ahn, R Wang, M Pakala, SH Kang 2018 IEEE Symposium on VLSI Technology, 185-186, 2018 | 21 | 2018 |
| Process optimization of perpendicular magnetic tunnel junction arrays for last-level cache beyond 7 nm node L Xue, C Ching, A Kontos, J Ahn, X Wang, R Whig, H Tseng, J Howarth, ... 2018 IEEE Symposium on VLSI Technology, 117-118, 2018 | 20 | 2018 |
| Effect and extraction of series resistance in Al2O3‐InGaAs MOS with bulk‐oxide trap B Yu, Y Yuan, HP Chen, J Ahn, PC McIntyre, Y Taur Electronics letters 49 (7), 492-493, 2013 | 17 | 2013 |
| Method of forming metal pattern using selective electroplating process HJ Lee, JW Lee, DH Hong, S Hah, H Son, JS Chung, JS Ahn US Patent App. 10/875,434, 2005 | 17 | 2005 |
| The effect of post oxide deposition annealing on the effective work function in metal/Al2O3/InGaAs gate stack R Winter, I Krylov, J Ahn, PC McIntyre, M Eizenberg Applied Physics Letters 104 (20), 2014 | 16 | 2014 |
