Jun-Wei Luo
Jun-Wei Luo
Institute of Semiconductors, Chinese Academay of Sicences
Verified email at semi.ac.cn
Title
Cited by
Cited by
Year
Self-assembled quantum dots in a nanowire system for quantum photonics
M Heiss, Y Fontana, A Gustafsson, G Wüst, C Magen, DD O’Regan, ...
Nature materials 12 (5), 439-444, 2013
3652013
Hidden spin polarization in inversion-symmetric bulk crystals
X Zhang, Q Liu, JW Luo, AJ Freeman, A Zunger
Nature Physics 10 (5), 387-393, 2014
3612014
Mapping the orbital wavefunction of the surface states in three-dimensional topological insulators
Y Cao, JA Waugh, XW Zhang, JW Luo, Q Wang, TJ Reber, SK Mo, Z Xu, ...
Nature Physics 9 (8), 499-504, 2013
1352013
Genetic-algorithm discovery of a direct-gap and optically allowed superstructure from indirect-gap Si and Ge semiconductors
M d’Avezac, JW Luo, T Chanier, A Zunger
Physical Review Letters 108 (2), 027401, 2012
1192012
Highly sensitive and fast phototransistor based on large size CVD-grown SnS 2 nanosheets
Y Huang, HX Deng, K Xu, ZX Wang, QS Wang, FM Wang, F Wang, ...
Nanoscale 7 (33), 14093-14099, 2015
1002015
False-positive and false-negative assignments of topological insulators in density functional theory and hybrids
J Vidal, X Zhang, L Yu, JW Luo, A Zunger
Physical Review B 84 (4), 041109, 2011
962011
Carrier multiplication in semiconductor nanocrystals: theoretical screening of candidate materials based on band-structure effects
JW Luo, A Franceschetti, A Zunger
Nano letters 8 (10), 3174-3181, 2008
962008
Matrix-embedded silicon quantum dots for photovoltaic applications: a theoretical study of critical factors
JW Luo, P Stradins, A Zunger
Energy & Environmental Science 4 (7), 2546-2557, 2011
932011
Wide InP nanowires with wurtzite/zincblende superlattice segments are type-II whereas narrower nanowires become type-I: an atomistic pseudopotential calculation
L Zhang, JW Luo, A Zunger, N Akopian, V Zwiller, JC Harmand
Nano letters 10 (10), 4055-4060, 2010
902010
In-plane Schottky-barrier field-effect transistors based on 1T/2H heterojunctions of transition-metal dichalcogenides
ZQ Fan, XW Jiang, JW Luo, LY Jiao, R Huang, SS Li, LW Wang
Physical Review B 96 (16), 165402, 2017
792017
Split Dirac cones in HgTe/CdTe quantum wells due to symmetry-enforced level anticrossing at interfaces
SA Tarasenko, MV Durnev, MO Nestoklon, EL Ivchenko, JW Luo, ...
Physical Review B 91 (8), 081302, 2015
702015
Chemical trends of defect formation in Si quantum dots: The case of group-III and group-V dopants
Q Xu, JW Luo, SS Li, JB Xia, J Li, SH Wei
Physical Review B 75 (23), 235304, 2007
692007
Strained Interface Defects in Silicon Nanocrystals
BG Lee, D Hiller, JW Luo, OE Semonin, MC Beard, M Zacharias, ...
Advanced Functional Materials 22 (15), 3223-3232, 2012
682012
Improving performances of in-plane transition-metal dichalcogenide Schottky barrier field-effect transistors
ZQ Fan, XW Jiang, J Chen, JW Luo
ACS applied materials & interfaces 10 (22), 19271-19277, 2018
582018
Genomic design of strong direct-gap optical transition in Si/Ge core/multishell nanowires
L Zhang, M d’Avezac, JW Luo, A Zunger
Nano letters 12 (2), 984-991, 2012
552012
Quasi-Direct Optical Transitions in Silicon Nanocrystals with Intensity Exceeding the Bulk
BG Lee, JW Luo, NR Neale, MC Beard, D Hiller, M Zacharias, P Stradins, ...
Nano letters 16 (3), 1583-1589, 2016
512016
Full-zone spin splitting for electrons and holes in bulk GaAs and GaSb
JW Luo, G Bester, A Zunger
Physical review letters 102 (5), 056405, 2009
512009
Revealing the Origin of Fast Electron Transfer in TiO2-Based Dye-Sensitized Solar Cells
H Wei, JW Luo, SS Li, LW Wang
Journal of the American Chemical Society 138 (26), 8165-8174, 2016
452016
Genetic Design of Enhanced Valley Splitting towards a Spin Qubit in Silicon
L Zhang, JW Luo, AL Saraiva, B Koiller, A Zunger
NATURE COMMUNICATIONS 4, 2396, 2013
452013
Tunable Electronic Structures of GeSe Nanosheets and Nanoribbons
ZQ Fan, XW Jiang, Z Wei, JW Luo, SS Li
The Journal of Physical Chemistry C 121 (26), 14373-14379, 2017
432017
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Articles 1–20