Kilian Mergenthaler
Kilian Mergenthaler
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Growth of β‐Ga2O3 on Al2O3 and GaAs using metal‐organic vapor‐phase epitaxy
V Gottschalch, K Mergenthaler, G Wagner, J Bauer, H Paetzelt, C Sturm, ...
physica status solidi (a) 206 (2), 243-249, 2009
Probing the wurtzite conduction band structure using state filling in highly doped InP nanowires
J Wallentin, K Mergenthaler, M Ek, LR Wallenberg, L Samuelson, ...
Nano letters 11 (6), 2286-2290, 2011
A new route toward semiconductor nanospintronics: highly Mn-doped GaAs nanowires realized by ion-implantation under dynamic annealing conditions
C Borschel, ME Messing, MT Borgstrom, W Paschoal Jr, J Wallentin, ...
Nano letters 11 (9), 3935-3940, 2011
GaAsP nanowires grown by aerotaxy
W Metaferia, AR Persson, K Mergenthaler, F Yang, W Zhang, A Yartsev, ...
Nano Letters 16 (9), 5701-5707, 2016
Zn-doping of GaAs nanowires grown by Aerotaxy
F Yang, ME Messing, K Mergenthaler, M Ghasemi, J Johansson, ...
Journal of Crystal Growth 414, 181-186, 2015
GaAs/AlGaAs heterostructure nanowires studied by cathodoluminescence
J Bolinsson, M Ek, J Trägårdh, K Mergenthaler, D Jacobsson, ME Pistol, ...
Nano Research 7, 473-490, 2014
Carrier recombination dynamics in sulfur-doped InP nanowires
W Zhang, S Lehmann, K Mergenthaler, J Wallentin, MT Borgstrom, ...
Nano Letters 15 (11), 7238-7244, 2015
Numerical simulations of absorption properties of InP nanowires for solar cell applications
P Kailuweit, M Peters, J Leene, K Mergenthaler, F Dimroth, AW Bett
Progress in photovoltaics: research and applications 20 (8), 945-953, 2012
Diffusion length measurements in axial and radial heterostructured nanowires using cathodoluminescence
J Bolinsson, K Mergenthaler, L Samuelson, A Gustafsson
Journal of crystal growth 315 (1), 138-142, 2011
In situ etching for control over axial and radial III-V nanowire growth rates using HBr
A Berg, K Mergenthaler, M Ek, ME Pistol, LR Wallenberg, MT Borgström
Nanotechnology 25 (50), 505601, 2014
Single GaInP nanowire pin junctions near the direct to indirect bandgap crossover point
J Wallentin, L Barrutia Poncela, AM Jansson, K Mergenthaler, M Ek, ...
Applied Physics Letters 100 (25), 2012
Recombination dynamics in aerotaxy-grown Zn-doped GaAs nanowires
W Zhang, F Yang, ME Messing, K Mergenthaler, ME Pistol, K Deppert, ...
Nanotechnology 27 (45), 455704, 2016
Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors
K Mergenthaler, N Anttu, N Vainorius, M Aghaeipour, S Lehmann, ...
Nature communications 8 (1), 1634, 2017
Semiconductor-oxide heterostructured nanowires using postgrowth oxidation
J Wallentin, M Ek, N Vainorious, K Mergenthaler, L Samuelson, ME Pistol, ...
Nano letters 13 (12), 5961-5966, 2013
Fabrication and characterization of AlP-GaP core-shell nanowires
MT Borgström, K Mergenthaler, ME Messing, U Håkanson, J Wallentin, ...
Journal of crystal growth 324 (1), 290-295, 2011
Large-energy-shift photon upconversion in degenerately doped InP nanowires by direct excitation into the electron gas
K Mergenthaler, A Iqbal, J Wallentin, S Lehmann, MT Borgström, ...
Nano Research 6, 752-757, 2013
Growth and characterization of ZnO nanostructures on sapphire substrates
K Mergenthaler, V Gottschalch, J Bauer, H Paetzelt, G Wagner
Journal of Crystal Growth 310 (23), 5134-5138, 2008
Calculation of hole concentrations in Zn doped GaAs nanowires
J Johansson, M Ghasemi, S Sivakumar, K Mergenthaler, AR Persson, ...
Nanomaterials 10 (12), 2524, 2020
Photon upconversion in degenerately sulfur doped InP nanowires
K Mergenthaler, S Lehmann, J Wallentin, W Zhang, MT Borgström, ...
Nanoscale 7 (48), 20503-20509, 2015
Photon Upconversion in Heavily Doped Semiconductors
K Mergenthaler
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