| Growth of β‐Ga2O3 on Al2O3 and GaAs using metal‐organic vapor‐phase epitaxy V Gottschalch, K Mergenthaler, G Wagner, J Bauer, H Paetzelt, C Sturm, ... physica status solidi (a) 206 (2), 243-249, 2009 | 94 | 2009 |
| Probing the wurtzite conduction band structure using state filling in highly doped InP nanowires J Wallentin, K Mergenthaler, M Ek, LR Wallenberg, L Samuelson, ... Nano letters 11 (6), 2286-2290, 2011 | 92 | 2011 |
| A new route toward semiconductor nanospintronics: highly Mn-doped GaAs nanowires realized by ion-implantation under dynamic annealing conditions C Borschel, ME Messing, MT Borgstrom, W Paschoal Jr, J Wallentin, ... Nano letters 11 (9), 3935-3940, 2011 | 53 | 2011 |
| GaAsP nanowires grown by aerotaxy W Metaferia, AR Persson, K Mergenthaler, F Yang, W Zhang, A Yartsev, ... Nano Letters 16 (9), 5701-5707, 2016 | 48 | 2016 |
| Zn-doping of GaAs nanowires grown by Aerotaxy F Yang, ME Messing, K Mergenthaler, M Ghasemi, J Johansson, ... Journal of Crystal Growth 414, 181-186, 2015 | 38 | 2015 |
| GaAs/AlGaAs heterostructure nanowires studied by cathodoluminescence J Bolinsson, M Ek, J Trägårdh, K Mergenthaler, D Jacobsson, ME Pistol, ... Nano Research 7, 473-490, 2014 | 35 | 2014 |
| Carrier recombination dynamics in sulfur-doped InP nanowires W Zhang, S Lehmann, K Mergenthaler, J Wallentin, MT Borgstrom, ... Nano Letters 15 (11), 7238-7244, 2015 | 32 | 2015 |
| Numerical simulations of absorption properties of InP nanowires for solar cell applications P Kailuweit, M Peters, J Leene, K Mergenthaler, F Dimroth, AW Bett Progress in photovoltaics: research and applications 20 (8), 945-953, 2012 | 31 | 2012 |
| Diffusion length measurements in axial and radial heterostructured nanowires using cathodoluminescence J Bolinsson, K Mergenthaler, L Samuelson, A Gustafsson Journal of crystal growth 315 (1), 138-142, 2011 | 27 | 2011 |
| Single GaInP nanowire pin junctions near the direct to indirect bandgap crossover point J Wallentin, L Barrutia Poncela, AM Jansson, K Mergenthaler, M Ek, ... Applied Physics Letters 100 (25), 2012 | 23 | 2012 |
| In situ etching for control over axial and radial III-V nanowire growth rates using HBr A Berg, K Mergenthaler, M Ek, ME Pistol, LR Wallenberg, MT Borgström Nanotechnology 25 (50), 505601, 2014 | 22 | 2014 |
| Recombination dynamics in aerotaxy-grown Zn-doped GaAs nanowires W Zhang, F Yang, ME Messing, K Mergenthaler, ME Pistol, K Deppert, ... Nanotechnology 27 (45), 455704, 2016 | 21 | 2016 |
| Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors K Mergenthaler, N Anttu, N Vainorius, M Aghaeipour, S Lehmann, ... Nature communications 8 (1), 1634, 2017 | 9 | 2017 |
| Semiconductor-oxide heterostructured nanowires using postgrowth oxidation J Wallentin, M Ek, N Vainorious, K Mergenthaler, L Samuelson, ME Pistol, ... Nano letters 13 (12), 5961-5966, 2013 | 8 | 2013 |
| Fabrication and characterization of AlP-GaP core-shell nanowires MT Borgström, K Mergenthaler, ME Messing, U Håkanson, J Wallentin, ... Journal of crystal growth 324 (1), 290-295, 2011 | 8 | 2011 |
| Large-energy-shift photon upconversion in degenerately doped InP nanowires by direct excitation into the electron gas K Mergenthaler, A Iqbal, J Wallentin, S Lehmann, MT Borgström, ... Nano Research 6, 752-757, 2013 | 7 | 2013 |
| Growth and characterization of ZnO nanostructures on sapphire substrates K Mergenthaler, V Gottschalch, J Bauer, H Paetzelt, G Wagner Journal of Crystal Growth 310 (23), 5134-5138, 2008 | 5 | 2008 |
| Calculation of hole concentrations in Zn doped GaAs nanowires J Johansson, M Ghasemi, S Sivakumar, K Mergenthaler, AR Persson, ... Nanomaterials 10 (12), 2524, 2020 | 2 | 2020 |
| Photon upconversion in degenerately sulfur doped InP nanowires K Mergenthaler, S Lehmann, J Wallentin, W Zhang, MT Borgström, ... Nanoscale 7 (48), 20503-20509, 2015 | 1 | 2015 |
| Photon Upconversion in Heavily Doped Semiconductors K Mergenthaler Lund University, 2016 | | 2016 |
