| Robust zero-field skyrmion formation in FeGe epitaxial thin films JC Gallagher, KY Meng, JT Brangham, HL Wang, BD Esser, DW McComb, ... Physical review letters 118 (2), 027201, 2017 | 130 | 2017 |
| Solar-cycle characteristics examined in separate hemispheres: phase, Gnevyshev gap, and length of minimum AA Norton, JC Gallagher Solar Physics 261, 193-207, 2010 | 103 | 2010 |
| GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging MJ Tadjer, TJ Anderson, MG Ancona, PE Raad, P Komarov, T Bai, ... IEEE Electron Device Letters 40 (6), 881-884, 2019 | 71 | 2019 |
| Exceptionally high magnetization of stoichiometric Y3Fe5O12 epitaxial films grown on Gd3Ga5O12 JC Gallagher, AS Yang, JT Brangham, BD Esser, SP White, MR Page, ... Applied Physics Letters 109 (7), 2016 | 52 | 2016 |
| The effect of chemical pressure on the structure and properties of A2CrOsO6 (A= Sr, Ca) ferrimagnetic double perovskite R Morrow, JR Soliz, AJ Hauser, JC Gallagher, MA Susner, MD Sumption, ... Journal of Solid State Chemistry 238, 46-52, 2016 | 48 | 2016 |
| Thickness dependence of spin Hall angle of Au grown on epitaxial films JT Brangham, KY Meng, AS Yang, JC Gallagher, BD Esser, SP White, ... Physical Review B 94 (5), 054418, 2016 | 46 | 2016 |
| Epitaxial growth of iridate pyrochlore Nd2Ir2O7 films JC Gallagher, BD Esser, R Morrow, SR Dunsiger, REA Williams, ... Scientific reports 6 (1), 22282, 2016 | 45 | 2016 |
| Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD JK Hite, TJ Anderson, LE Luna, JC Gallagher, MA Mastro, JA Freitas, ... Journal of Crystal Growth 498, 352-356, 2018 | 39 | 2018 |
| High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen MJ Tadjer, AD Koehler, JA Freitas, JC Gallagher, MC Specht, ER Glaser, ... Applied Physics Letters 113 (19), 2018 | 38 | 2018 |
| Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates MJ Tadjer, F Alema, A Osinsky, MA Mastro, N Nepal, JM Woodward, ... Journal of Physics D: Applied Physics 54 (3), 034005, 2020 | 32 | 2020 |
| Long range, non-destructive characterization of GaN substrates for power devices JC Gallagher, TJ Anderson, LE Luna, AD Koehler, JK Hite, NA Mahadik, ... Journal of Crystal Growth 506, 178-184, 2019 | 30 | 2019 |
| Room-temperature skyrmions in strain-engineered FeGe thin films S Budhathoki, A Sapkota, KM Law, S Ranjit, B Nepal, BD Hoskins, ... Physical Review B 101 (22), 220405, 2020 | 24 | 2020 |
| Effect of surface morphology on diode performance in vertical GaN Schottky diodes JK Hite, TJ Anderson, MA Mastro, LE Luna, JC Gallagher, RL Myers-Ward, ... ECS Journal of Solid State Science and Technology 6 (11), S3103, 2017 | 23 | 2017 |
| Structural and electronic properties of Si-and Sn-doped (− 201) β-Ga2O3 annealed in nitrogen and oxygen atmospheres MJ Tadjer, JA Freitas, JC Culbertson, MH Weber, ER Glaser, AL Mock, ... Journal of Physics D: Applied Physics 53 (50), 504002, 2020 | 22 | 2020 |
| p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing V Meyers, E Rocco, TJ Anderson, JC Gallagher, MA Ebrish, K Jones, ... Journal of Applied Physics 128 (8), 2020 | 22 | 2020 |
| Demonstration of CuI as a P–N heterojunction to β-Ga2O3 JC Gallagher, AD Koehler, MJ Tadjer, NA Mahadik, TJ Anderson, ... Applied Physics Express 12 (10), 104005, 2019 | 19 | 2019 |
| Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments GM Foster, A Koehler, M Ebrish, J Gallagher, T Anderson, B Noesges, ... Applied Physics Letters 117 (8), 2020 | 18 | 2020 |
| A simple edge termination design for vertical GaN PN diodes P Pandey, TM Nelson, WM Collings, MR Hontz, DG Georgiev, AD Koehler, ... IEEE Transactions on Electron Devices 69 (9), 5096-5103, 2022 | 16 | 2022 |
| Effect of surface passivation and substrate on proton irradiated AlGaN/GaN HEMT transport properties JC Gallagher, TJ Anderson, AD Koehler, NA Mahadik, A Nath, BD Weaver, ... ECS Journal of Solid State Science and Technology 6 (11), S3060, 2017 | 16 | 2017 |
| Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques JC Gallagher, MA Ebrish, MA Porter, AG Jacobs, BP Gunning, RJ Kaplar, ... Scientific Reports 12 (1), 658, 2022 | 15 | 2022 |
Travis J. AndersonNaval Research LaboratoryVerified email at nrl.navy.mil
