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Fares BENISSAD
Fares BENISSAD
Doctorant en physique, université de Bejaia
Verified email at univ-bejaia.dz
Title
Cited by
Cited by
Year
Electronic and Magnetic Properties of Transition‐Metal‐Doped ScN for Spintronics Applications
F Benissad, A Houari
physica status solidi (b) 258 (2), 2000241, 2021
32021
Theoretical Study of Ternary CoSP Semiconductor: A Candidate for Photovoltaic Applications
A Houari, F Benissad
Advanced Theory and Simulations 2 (10), 1900111, 2019
12019
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Articles 1–2