Dimitri Linten
Dimitri Linten
Verified email at imec.be
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Cited by
Cited by
Year
Design issues and considerations for low-cost 3-D TSV IC technology
G Van der Plas, P Limaye, I Loi, A Mercha, H Oprins, C Torregiani, S Thijs, ...
IEEE Journal of Solid-State Circuits 46 (1), 293-307, 2010
3672010
Vertical Si-Nanowire-Type Tunneling FETs With Low Subthreshold Swing () at Room Temperature
R Gandhi, Z Chen, N Singh, K Banerjee, S Lee
IEEE Electron Device Letters 32 (4), 437-439, 2011
3462011
Design methodology for MuGFET ESD protection devices
S Thijs, D Linten, DE Trémouilles
US Patent 7,923,266, 2011
1962011
A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS
D Linten, S Thijs, MI Natarajan, P Wambacq, W Jeamsaksiri, J Ramos, ...
IEEE Journal of Solid-State Circuits 40 (7), 1434-1442, 2005
1752005
A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS
D Linten, S Thijs, MI Natarajan, P Wambacq, W Jeamsaksiri, J Ramos, ...
IEEE Journal of Solid-State Circuits 40 (7), 1434-1442, 2005
1752005
Planar Bulk MOSFETs Versus FinFETs: An Analog/RF Perspective
V Subramanian, B Parvais, J Borremans, A Mercha, D Linten, P Wambacq, ...
IEEE Transactions on Electron Devices 53 (12), 3071-3079, 2006
1552006
Low-power 5 GHz LNA and VCO in 90 nm RF CMOS
D Linten, L Aspemyr, W Jeamsaksiri, J Ramos, A Mercha, S Jenei, S Thijs, ...
2004 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No …, 2004
1172004
An ESD-protected DC-to-6GHz 9.7 mW LNA in 90nm digital CMOS
J Borremans, P Wambacq, D Linten
2007 IEEE International Solid-State Circuits Conference. Digest of Technical …, 2007
952007
Comphy—A compact-physics framework for unified modeling of BTI
G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ...
Microelectronics Reliability 85, 49-65, 2018
862018
Laser-and heavy ion-induced charge collection in bulk FinFETs
F El-Mamouni, EX Zhang, ND Pate, N Hooten, RD Schrimpf, RA Reed, ...
IEEE Transactions on Nuclear Science 58 (6), 2563-2569, 2011
672011
Causes and consequences of the stochastic aspect of filamentary RRAM
R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, B Govoreanu, ...
Microelectronic Engineering 147, 171-175, 2015
622015
Device and circuit-level analog performance trade-offs: a comparative study of planar bulk FETs versus FinFETs
V Subramaniana, B Parvais, J Borremans, A Mercha, D Linten, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
532005
Thin-film as enabling passive integration technology for RF SoC and SiP
G Carchon, X Sun, G Posada, D Linten, E Beyne
ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State …, 2005
502005
Heavy-ion-induced current transients in bulk and SOI FinFETs
F El-Mamouni, EX Zhang, DR Ball, B Sierawski, MP King, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 59 (6), 2674-2681, 2012
482012
2A. 2 Calibrated Wafer-Level HBM Measurements for Quasi-Static and Transient Device Analysis
M Scholz, D Linten, S Thijs, G Groseneken, D Tremouilles, M Sawada, ...
ELECTRICAL OVERSTRESS ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS 29, 89, 2007
482007
Integration of a 90nm RF CMOS technology (200GHz f/sub max/-150GHz f/sub T/NMOS) demonstrated on a 5GHz LNA
W Jeamsaksiri, A Mercha, J Ramos, D Linten, S Thijs, S Jenei, ...
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 100-101, 2004
482004
The potential of FinFETs for analog and RF circuit applications
P Wambacq, B Verbruggen, K Scheir, J Borremans, M Dehan, D Linten, ...
IEEE Transactions on Circuits and Systems I: Regular Papers 54 (11), 2541-2551, 2007
472007
4A. 1 T-Diodes-A Novel Plug-and-Play Wideband RF Circuit ESD Protection Methodology
D Linten, M Dehan, M Scholz, S Thijs, G Groesenken, J Borromans, ...
ELECTRICAL OVERSTRESS ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS 29, 242, 2007
472007
The Impact of X-Ray and Proton Irradiation on -Based Bipolar Resistive Memories
JS Bi, ZS Han, EX Zhang, MW McCurdy, RA Reed, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 60 (6), 4540-4546, 2013
462013
Geometry dependence of total-dose effects in bulk FinFETs
I Chatterjee, EX Zhang, BL Bhuva, RA Reed, ML Alles, NN Mahatme, ...
IEEE Transactions on Nuclear Science 61 (6), 2951-2958, 2014
452014
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