| Quantifying van der Waals interactions in layered transition metal dichalcogenides from pressure-enhanced valence band splitting P Ci, Y Chen, J Kang, R Suzuki, HS Choe, J Suh, C Ko, T Park, K Shen, ... Nano letters 17 (8), 4982-4988, 2017 | 64 | 2017 |
| A stateful logic family based on a new logic primitive circuit composed of two antiparallel bipolar memristors N Xu, TG Park, HJ Kim, X Shao, KJ Yoon, TH Park, L Fang, KM Kim, ... Advanced Intelligent Systems 2 (1), 1900082, 2020 | 49 | 2020 |
| Pressurizing Field-Effect Transistors of Few-Layer MoS2 in a Diamond Anvil Cell Y Chen, F Ke, P Ci, C Ko, T Park, S Saremi, H Liu, Y Lee, J Suh, ... Nano letters 17 (1), 194-199, 2017 | 40 | 2017 |
| In‐memory stateful logic computing using memristors: gate, calculation, and application N Xu, T Park, KJ Yoon, CS Hwang physica status solidi (RRL)–Rapid Research Letters 15 (9), 2100208, 2021 | 37 | 2021 |
| Novel Selector‐Induced Current‐Limiting Effect through Asymmetry Control for High‐Density One‐Selector–One‐Resistor Crossbar Arrays Y Kim, YJ Kwon, J Kim, CH An, T Park, DE Kwon, HC Woo, HJ Kim, ... Advanced Electronic Materials 5 (7), 1800806, 2019 | 18 | 2019 |
| Multi‐Level Control of Conductive Filament Evolution and Enhanced Resistance Controllability of the Cu‐Cone Structure Embedded Conductive Bridge Random Access Memory HJ Kim, J Kim, TG Park, JH Yoon, CS Hwang Advanced Electronic Materials 8 (8), 2100209, 2022 | 8 | 2022 |
| Highly parallel stateful Boolean logic gates based on aluminum-doped self-rectifying memristors in a vertical crossbar array structure T Park, SS Kim, BJ Lee, TW Park, HJ Kim, CS Hwang Nanoscale 15 (13), 6387-6395, 2023 | 6 | 2023 |
| Training Method for Accurate Off‐Chip Training of One‐Selector‐One‐Resistor Crossbar Array with Nonlinearity and Wire Resistance J Kim, HC Woo, S Lee, BJ Lee, T Park, CS Hwang Advanced Intelligent Systems 4 (8), 2100256, 2022 | 6 | 2022 |
| Reliable Domain‐Specific Exclusive Logic Gates Using Reconfigurable Sequential Logic Based on Antiparallel Bipolar Memristors T Park, YR Kim, J Kim, J Lee, CS Hwang Advanced Intelligent Systems 4 (5), 2100267, 2022 | 5 | 2022 |
| Parallel Density‐Based Spatial Clustering with Dual‐Functional Memristive Crossbar Array S Cheong, DH Shin, SH Lee, YH Jang, T Park, J Han, SK Shim, YR Kim, ... Advanced Functional Materials 34 (8), 2309108, 2024 | 1 | 2024 |
| Reconfigurable Two-dimensional Floating Gate Field-effect Transistors for Highly Integrated In-memory Computing GH Lee, CS Hwang, JC Shin, T Park, DH Shin, HY Choi, K Watanabe, ... | | 2024 |
| Multiphase Reset Induced Reliable Dual-Mode Resistance Switching of the Ta/HfO2/RuO2 Memristor DH Shin, H Park, N Ghenzi, YR Kim, S Cheong, SK Shim, S Yim, TW Park, ... ACS Applied Materials & Interfaces, 2024 | | 2024 |
| Efficient Method for Error Detection and Correction in In‐Memory Computing Based on Reliable Ex‐Logic Gates T Park, YR Kim, DH Shin, BJ Lee, CS Hwang Advanced Intelligent Systems 5 (5), 2200341, 2023 | | 2023 |
| In-memory Computing based on Two Anti-Parallel Bipolar Memristors for Beyond von-Neumann Architecture T Park | | 2022 |
| Multi‐Level Control of Conductive Filament Evolution and Enhanced Resistance Controllability of the Cu‐Cone Structure Embedded Conductive Bridge Random Access Memory (Adv … HJ Kim, J Kim, TG Park, JH Yoon, CS Hwang Advanced Electronic Materials 8 (8), 2270041, 2022 | | 2022 |
