| Gate driver design for 1.7 kV SiC MOSFET module with Rogowski current sensor for shortcircuit protection J Wang, Z Shen, C DiMarino, R Burgos, D Boroyevich 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 516-523, 2016 | 136 | 2016 |
| Design of a high-bandwidth Rogowski current sensor for gate-drive shortcircuit protection of 1.7 kV SiC MOSFET power modules J Wang, Z Shen, R Burgos, D Boroyevich 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015 | 104 | 2015 |
| Integrated switch current sensor for shortcircuit protection and current control of 1.7-kV SiC MOSFET modules J Wang, Z Shen, R Burgos, D Boroyevich 2016 IEEE Energy Conversion Congress and Exposition (ECCE), 1-7, 2016 | 94 | 2016 |
| Comparison and discussion on shortcircuit protections for silicon-carbide MOSFET modules: desaturation versus Rogowski switch-current sensor S Mocevic, J Wang, R Burgos, D Boroyevich, M Jaksic, C Stancu, ... IEEE Transactions on Industry Applications, 2020 | 93 | 2020 |
| Switching-cycle state-space modeling and control of the modular multilevel converter J Wang, R Burgos, D Boroyevich IEEE Journal of Emerging and Selected Topics in Power Electronics 2 (4 …, 2014 | 89 | 2014 |
| Development of a compact 750 kVA three-phase NPC three-level universal inverter module with specifically designed busbar J Wang, B Yang, J Zhao, Y Deng, X He, X Zhixin 2010 IEEE Applied Power Electronics Conference and Exposition (APEC), 1266-1271, 2010 | 81 | 2010 |
| High-scalability enhanced gate drivers for SiC MOSFET modules with transient immunity beyond 100 V/ns J Wang, S Mocevic, R Burgos, D Boroyevich IEEE Transactions on Power Electronics 35 (10), 10180-10199, 2020 | 76 | 2020 |
| A survey on the modular multilevel converters—Modeling, modulation and controls J Wang, R Burgos, D Boroyevich 2013 IEEE Energy Conversion Congress and Exposition, 3984-3991, 2013 | 76 | 2013 |
| Design and testing of 1 kV H-bridge power electronics building block based on 1.7 kV SiC MOSFET module J Wang, R Burgos, D Boroyevich, Z Liu 2018 International Power Electronics Conference (IPEC-Niigata 2018-ECCE Asia …, 2018 | 75 | 2018 |
| Characterization and evaluation of the state-of-the-art 3.3-kV 400-A SiC MOSFETs A Marzoughi, J Wang, R Burgos, D Boroyevich IEEE Transactions on Industrial Electronics 64 (10), 8247-8257, 2017 | 66 | 2017 |
| Design, analysis, and discussion of short circuit and overload gate-driver dual-protection scheme for 1.2-kV, 400-A SiC MOSFET modules K Sun, J Wang, R Burgos, D Boroyevich IEEE Transactions on Power Electronics, 2019 | 63 | 2019 |
| Busbar design for SiC-based H-bridge PEBB using 1.7 kV, 400 A SiC MOSFETs operating at 100 kHz NR Mehrabadi, I Cvetkovic, J Wang, R Burgos, D Boroyevich 2016 IEEE Energy Conversion Congress and Exposition (ECCE), 1-7, 2016 | 61 | 2016 |
| Power-cell design and assessment methodology based on a high-current 10 kV SiC MOSFET half-bridge module S Mocevic, J Yu, Y Xu, J Stewart, J Wang, I Cvetkovic, D Dong, R Burgos, ... IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020 | 60 | 2020 |
| High-density current-transformer based gate-drive power supply with reinforced isolation for 10 kV SiC MOSFET modules J Hu, J Wang, R Burgos, B Wen, D Boroyevich IEEE Journal of Emerging and Selected Topics in Power Electronics, 2019 | 60 | 2019 |
| Comparison between desaturation sensing and Rogowski coil current sensing for shortcircuit protection of 1.2 kV, 300 A SiC MOSFET module S Mocevic, J Wang, R Burgos, D Boroyevich, C Stancu, M Jaksic, ... 2018 IEEE Applied Power Electronics Conference and Exposition (APEC), 2666-2672, 2018 | 60 | 2018 |
| DC circuit breakers: A technology development status survey S Zheng, R Kheirollahi, J Pan, L Xue, J Wang, F Lu IEEE Transactions on Smart Grid, 2021 | 51 | 2021 |
| Power electronics building block (PEBB) design based on 1.7 kV SiC MOSFET Modules J Wang, Z Shen, I Cvetkovic, NR Mehrabadi, A Marzoughi, S Ohn, J Yu, ... 2017 IEEE Electric Ship Technologies Symposium (ESTS), 612-619, 2017 | 51 | 2017 |
| Design of a 10 kV SiC MOSFET-based high-density, high-efficiency, modular medium-voltage power converter S Mocevic, J Yu, B Fan, K Sun, Y Xu, J Stewart, Y Rong, H Song, ... IEnergy 1 (1), 100-113, 2022 | 50 | 2022 |
| A high-speed gate driver with PCB-embedded Rogowski switch-current sensor for a 10 kV, 240 A, SiC MOSFET module J Wang, S Mocevic, Y Xu, C DiMarino, R Burgos, D Boroyevich 2018 IEEE Energy Conversion Congress and Exposition (ECCE), 5489-5494, 2018 | 38 | 2018 |
| Gate-driver integrated junction temperature estimation of SiC MOSFET modules S Mocevic, V Mitrovic, J Wang, R Burgos, D Boroyevich IEEE Journal of Emerging and Selected Topics in Power Electronics, 2021 | 37 | 2021 |
Rolando BurgosProfessor at Virginia Tech, Center for Power Electronics Systems (CPES)Verified email at vt.edu
