Bruno K Meyer
Bruno K Meyer
Justus Liebig University Giessen
Verified email at - Homepage
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Bound exciton and donor-acceptor pair recombinations in ZnO
BK Meyer, H Alves, DM Hofmann, W Kriegseis, D Forster, F Bertram, ...
Physica Status Solidi-B-Basic Research 241 (2), 231, 2004
Hydrogen: a relevant shallow donor in zinc oxide
DM Hofmann, A Hofstaetter, F Leiter, H Zhou, F Henecker, BK Meyer, ...
Physical Review Letters 88 (4), 045504, 2002
Binary copper oxide semiconductors: From materials towards devices
BK Meyer, A Polity, D Reppin, M Becker, P Hering, PJ Klar, T Sander, ...
physica status solidi (b) 249 (8), 1487-1509, 2012
Rapid‐thermal‐oxidized porous Si− The superior photoluminescent Si
V Petrova‐Koch, T Muschik, A Kux, BK Meyer, F Koch, V Lehmann
Applied physics letters 61 (8), 943-945, 1992
Nitrogen-related local vibrational modes in ZnO: N
A Kaschner, U Haboeck, M Strassburg, M Strassburg, G Kaczmarczyk, ...
Applied Physics Letters 80 (11), 1909-1911, 2002
Optical investigations of defects in Cd 1− x Zn x Te
W Stadler, DM Hofmann, HC Alt, T Muschik, BK Meyer, E Weigel, ...
Physical review B 51 (16), 10619, 1995
Rapid research notes-the oxygen vacancy as the origin of a green emission in undoped ZnO
FH Leiter, HR Alves, A Hofstaetter, DM Hofmann, BK Meyer
Physica Status Solidi-B-Basic Research 226 (1), R4, 2001
Behind the weak excitonic emission of ZnO quantum dots: core-shell structure
H Zhou, H Alves, DM Hofmann, W Kriegseis, BK Meyer, G Kaczmarczyk, ...
Applied physics letters 80 (2), 210-212, 2002
On p‐type doping in GaN—acceptor binding energies
S Fischer, C Wetzel, EE Haller, BK Meyer
Applied physics letters 67 (9), 1298-1300, 1995
Tungsten and fluorine co-doping of VO2 films
W Burkhardt, T Christmann, S Franke, W Kriegseis, D Meister, BK Meyer, ...
Thin Solid Films 402 (1-2), 226-231, 2002
Valence-band ordering and magneto-optic exciton fine structure in ZnO
WRL Lambrecht, AV Rodina, S Limpijumnong, B Segall, BK Meyer
Physical Review B 65 (7), 075207, 2002
Properties of the yellow luminescence in undoped GaN epitaxial layers
DM Hofmann, D Kovalev, G Steude, BK Meyer, A Hoffmann, L Eckey, ...
Physical Review B 52 (23), 16702, 1995
Structural properties and bandgap bowing of ZnO1− xSx thin films deposited by reactive sputtering
BK Meyer, A Polity, B Farangis, Y He, D Hasselkamp, T Krämer, C Wang
Applied physics letters 85 (21), 4929-4931, 2004
Pressure induced deep gap state of oxygen in GaN
C Wetzel, T Suski, JW Ager Iii, ER Weber, EE Haller, S Fischer, BK Meyer, ...
Physical review letters 78 (20), 3923, 1997
W-and F-doped VO2 films studied by photoelectron spectrometry
W Burkhardt, T Christmann, BK Meyer, W Niessner, D Schalch, ...
Thin solid films 345 (2), 229-235, 1999
Oxygen vacancies in ZnO
F Leiter, H Alves, D Pfisterer, NG Romanov, DM Hofmann, BK Meyer
Physica B: Condensed Matter 340, 201-204, 2003
Identification of the chlorine A center in CdTe
DM Hofmann, P Omling, HG Grimmeiss, BK Meyer, KW Benz, D Sinerius
Physical Review B 45 (11), 6247, 1992
Exciton fine structure in undoped GaN epitaxial films
D Volm, K Oettinger, T Streibl, D Kovalev, M Ben-Chorin, J Diener, ...
Physical Review B 53 (24), 16543, 1996
Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers
MR Wagner, G Callsen, JS Reparaz, JH Schulze, R Kirste, M Cobet, ...
Physical Review B—Condensed Matter and Materials Physics 84 (3), 035313, 2011
Modified compensation model of CdTe
M Fiederle, C Eiche, M Salk, R Schwarz, KW Benz, W Stadler, ...
Journal of Applied Physics 84 (12), 6689-6692, 1998
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