Juan G Alzate - Google Scholar Citations

Cited by

	All	Since 2015
Citations	2199	1964
h-index	18	18
i10-index	23	22

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20112012201320142015201620172018201920208 22 61 130 254 346 436 434 456 37

Co-authors

Kang L. WangElectrical Engineering DepartmentVerified email at ee.ucla.edu
pramey upadhyayaPurdueVerified email at purdue.edu
Jordan KatineDirector/Technologist, Western Digital Research DivisionVerified email at wdc.com
Guoqiang YuInstitute of Physics, Chinese Academy of SciencesVerified email at ucla.edu
Pedram KhaliliAssociate Professor at Northwestern UniversityVerified email at northwestern.edu
Ilya KrivorotovProfessor, University of California at IrvineVerified email at uci.edu
Sergiy CherepovHGST a Western Digital company, San Jose, CAVerified email at hgst.com
Kos Galatsis Ph.D.School of Engineering & Applied Science @ UCLAVerified email at seas.ucla.edu
Cecile GrezesCEA Saclay / UCLA EE departmentVerified email at seas.ucla.edu
Dejan MarkovicProfessor of Electrical Engineering, UCLAVerified email at ee.ucla.edu
Richard DorranceResearch Scientist at Intel LabsVerified email at intel.com
Jian ZhuTDK-Headway, HGST, UC Irvine, USTCVerified email at uci.edu
Zhongming ZengVerified email at sinano.ac.cn

Juan G Alzate

Component Design Engineer, Advanced Design Team, Intel Corporation

Verified email at intel.com

Nanotechnology Semiconductor and Novel Devices


Title	Cited by	Year
Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields G Yu, P Upadhyaya, Y Fan, JG Alzate, W Jiang, KL Wong, S Takei, ... Nature nanotechnology 9 (7), 548, 2014	408	2014
Low-power non-volatile spintronic memory: STT-RAM and beyond KL Wang, JG Alzate, PK Amiri Journal of Physics D: Applied Physics 46 (7), 074003, 2013	378	2013
Voltage-induced ferromagnetic resonance in magnetic tunnel junctions J Zhu, JA Katine, GE Rowlands, YJ Chen, Z Duan, JG Alzate, ... Physical review letters 108 (19), 197203, 2012	224	2012
Electric-field-induced spin wave generation using multiferroic magnetoelectric cells S Cherepov, P Khalili Amiri, JG Alzate, K Wong, M Lewis, P Upadhyaya, ... Applied Physics Letters 104 (8), 082403, 2014	141	2014
Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product C Grezes, F Ebrahimi, JG Alzate, X Cai, JA Katine, J Langer, B Ocker, ... Applied Physics Letters 108 (1), 012403, 2016	109	2016
Magnetization switching through spin-Hall-effect-induced chiral domain wall propagation G Yu, P Upadhyaya, KL Wong, W Jiang, JG Alzate, J Tang, PK Amiri, ... Physical Review B 89 (10), 104421, 2014	100	2014
Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers GE Rowlands, T Rahman, JA Katine, J Langer, A Lyle, H Zhao, JG Alzate, ... Applied Physics Letters 98 (10), 102509, 2011	90	2011
Electric-field-controlled magnetoelectric RAM: progress, challenges, and scaling PK Amiri, JG Alzate, XQ Cai, F Ebrahimi, Q Hu, K Wong, C Grèzes, H Lee, ... IEEE Transactions on Magnetics 51 (11), 1-7, 2015	89	2015
Temperature dependence of the voltage-controlled perpendicular anisotropy in nanoscale MgO\| CoFeB\| Ta magnetic tunnel junctions JG Alzate, P Khalili Amiri, G Yu, P Upadhyaya, JA Katine, J Langer, ... Applied physics letters 104 (11), 112410, 2014	87	2014
Voltage-induced switching of nanoscale magnetic tunnel junctions JG Alzate, PK Amiri, P Upadhyaya, SS Cherepov, J Zhu, M Lewis, ... 2012 International Electron Devices Meeting, 29.5. 1-29.5. 4, 2012	84	2012
Voltage-controlled magnetic memory element with canted magnetization KL Wang, PK Amiri, JG Alzate US Patent 9,036,407, 2015	78	2015
Effect of the oxide layer on current-induced spin-orbit torques in Hf\|CoFeB\|MgO and Hf\|CoFeB\|TaO_x structures M Akyol, JG Alzate, G Yu, P Upadhyaya, KL Wong, A Ekicibil, ... Applied Physics Letters 106 (3), 032406, 2015	54	2015
Current-induced spin-orbit torque switching of perpendicularly magnetized Hf\|CoFeB\|MgO and Hf\|CoFeB\|TaO_x structures M Akyol, G Yu, JG Alzate, P Upadhyaya, X Li, KL Wong, A Ekicibil, ... Applied Physics Letters 106 (16), 162409, 2015	48	2015
Design of a Fast and Low-Power Sense Amplifier and Writing Circuit for High-Speed MRAM H Lee, JG Alzate, R Dorrance, X Cai, D Markovic, P Khalili Amiri, K Wang IEEE Transactions on Magnetism, 2014	46	2014
Diode-MTJ crossbar memory cell using voltage-induced unipolar switching for high-density MRAM R Dorrance, JG Alzate, SS Cherepov, P Upadhyaya, IN Krivorotov, ... IEEE electron device letters 34 (6), 753-755, 2013	44	2013
Electric-field-induced thermally assisted switching of monodomain magnetic bits P Khalili Amiri, P Upadhyaya, JG Alzate, KL Wang Journal of Applied Physics 113 (1), 013912, 2013	41	2013
MRAM as embedded non-volatile memory solution for 22FFL FinFET technology O Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ... 2018 IEEE International Electron Devices Meeting (IEDM), 18.1. 1-18.1. 4, 2018	33	2018
Electric field control and effect of Pd capping on magnetocrystalline anisotropy in FePd thin films: A first-principles study PV Ong, N Kioussis, PK Amiri, JG Alzate, KL Wang, GP Carman, J Hu, ... Physical Review B 89 (9), 094422, 2014	27	2014
In-plane magnetic field effect on switching voltage and thermal stability in electric-field-controlled perpendicular magnetic tunnel junctions C Grezes, A Rojas Rozas, F Ebrahimi, JG Alzate, X Cai, JA Katine, ... AIP Advances 6 (7), 075014, 2016	17	2016
Fast and low-power sense amplifier and writing circuit for high-speed MRAM KL Wang, PK Amiri, H Lee, JG Alzate US Patent 9,672,886, 2017	16	2017

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