Juan G Alzate
Juan G Alzate
Component Design Engineer, Advanced Design Team, Intel Corporation
Verified email at intel.com
TitleCited byYear
Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields
G Yu, P Upadhyaya, Y Fan, JG Alzate, W Jiang, KL Wong, S Takei, ...
Nature nanotechnology 9 (7), 548, 2014
Low-power non-volatile spintronic memory: STT-RAM and beyond
KL Wang, JG Alzate, PK Amiri
Journal of Physics D: Applied Physics 46 (7), 074003, 2013
Voltage-induced ferromagnetic resonance in magnetic tunnel junctions
J Zhu, JA Katine, GE Rowlands, YJ Chen, Z Duan, JG Alzate, ...
Physical review letters 108 (19), 197203, 2012
Electric-field-induced spin wave generation using multiferroic magnetoelectric cells
S Cherepov, P Khalili Amiri, JG Alzate, K Wong, M Lewis, P Upadhyaya, ...
Applied Physics Letters 104 (8), 082403, 2014
Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product
C Grezes, F Ebrahimi, JG Alzate, X Cai, JA Katine, J Langer, B Ocker, ...
Applied Physics Letters 108 (1), 012403, 2016
Magnetization switching through spin-Hall-effect-induced chiral domain wall propagation
G Yu, P Upadhyaya, KL Wong, W Jiang, JG Alzate, J Tang, PK Amiri, ...
Physical Review B 89 (10), 104421, 2014
Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers
GE Rowlands, T Rahman, JA Katine, J Langer, A Lyle, H Zhao, JG Alzate, ...
Applied Physics Letters 98 (10), 102509, 2011
Electric-field-controlled magnetoelectric RAM: progress, challenges, and scaling
PK Amiri, JG Alzate, XQ Cai, F Ebrahimi, Q Hu, K Wong, C Grèzes, H Lee, ...
IEEE Transactions on Magnetics 51 (11), 1-7, 2015
Temperature dependence of the voltage-controlled perpendicular anisotropy in nanoscale MgO| CoFeB| Ta magnetic tunnel junctions
JG Alzate, P Khalili Amiri, G Yu, P Upadhyaya, JA Katine, J Langer, ...
Applied physics letters 104 (11), 112410, 2014
Voltage-induced switching of nanoscale magnetic tunnel junctions
JG Alzate, PK Amiri, P Upadhyaya, SS Cherepov, J Zhu, M Lewis, ...
2012 International Electron Devices Meeting, 29.5. 1-29.5. 4, 2012
Voltage-controlled magnetic memory element with canted magnetization
KL Wang, PK Amiri, JG Alzate
US Patent 9,036,407, 2015
Effect of the oxide layer on current-induced spin-orbit torques in Hf|CoFeB|MgO and Hf|CoFeB|TaOx structures
M Akyol, JG Alzate, G Yu, P Upadhyaya, KL Wong, A Ekicibil, ...
Applied Physics Letters 106 (3), 032406, 2015
Current-induced spin-orbit torque switching of perpendicularly magnetized Hf|CoFeB|MgO and Hf|CoFeB|TaOx structures
M Akyol, G Yu, JG Alzate, P Upadhyaya, X Li, KL Wong, A Ekicibil, ...
Applied Physics Letters 106 (16), 162409, 2015
Design of a Fast and Low-Power Sense Amplifier and Writing Circuit for High-Speed MRAM
H Lee, JG Alzate, R Dorrance, X Cai, D Markovic, P Khalili Amiri, K Wang
IEEE Transactions on Magnetism, 2014
Diode-MTJ crossbar memory cell using voltage-induced unipolar switching for high-density MRAM
R Dorrance, JG Alzate, SS Cherepov, P Upadhyaya, IN Krivorotov, ...
IEEE electron device letters 34 (6), 753-755, 2013
Electric-field-induced thermally assisted switching of monodomain magnetic bits
P Khalili Amiri, P Upadhyaya, JG Alzate, KL Wang
Journal of Applied Physics 113 (1), 013912, 2013
MRAM as embedded non-volatile memory solution for 22FFL FinFET technology
O Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ...
2018 IEEE International Electron Devices Meeting (IEDM), 18.1. 1-18.1. 4, 2018
Electric field control and effect of Pd capping on magnetocrystalline anisotropy in FePd thin films: A first-principles study
PV Ong, N Kioussis, PK Amiri, JG Alzate, KL Wang, GP Carman, J Hu, ...
Physical Review B 89 (9), 094422, 2014
In-plane magnetic field effect on switching voltage and thermal stability in electric-field-controlled perpendicular magnetic tunnel junctions
C Grezes, A Rojas Rozas, F Ebrahimi, JG Alzate, X Cai, JA Katine, ...
AIP Advances 6 (7), 075014, 2016
Fast and low-power sense amplifier and writing circuit for high-speed MRAM
KL Wang, PK Amiri, H Lee, JG Alzate
US Patent 9,672,886, 2017
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