Juan G Alzate
Juan G Alzate
Component Design Engineer, Advanced Design Team, Intel Corporation
Verified email at intel.com
Cited by
Cited by
Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields
G Yu, P Upadhyaya, Y Fan, JG Alzate, W Jiang, KL Wong, S Takei, ...
Nature nanotechnology 9 (7), 548, 2014
Low-power non-volatile spintronic memory: STT-RAM and beyond
KL Wang, JG Alzate, PK Amiri
Journal of Physics D: Applied Physics 46 (7), 074003, 2013
Voltage-induced ferromagnetic resonance in magnetic tunnel junctions
J Zhu, JA Katine, GE Rowlands, YJ Chen, Z Duan, JG Alzate, ...
Physical review letters 108 (19), 197203, 2012
Electric-field-induced spin wave generation using multiferroic magnetoelectric cells
S Cherepov, P Khalili Amiri, JG Alzate, K Wong, M Lewis, P Upadhyaya, ...
Applied Physics Letters 104 (8), 082403, 2014
Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product
C Grezes, F Ebrahimi, JG Alzate, X Cai, JA Katine, J Langer, B Ocker, ...
Applied Physics Letters 108 (1), 012403, 2016
Magnetization switching through spin-Hall-effect-induced chiral domain wall propagation
G Yu, P Upadhyaya, KL Wong, W Jiang, JG Alzate, J Tang, PK Amiri, ...
Physical Review B 89 (10), 104421, 2014
Voltage-controlled magnetic memory element with canted magnetization
KL Wang, PK Amiri, JG Alzate
US Patent 9,036,407, 2015
Temperature dependence of the voltage-controlled perpendicular anisotropy in nanoscale MgO| CoFeB| Ta magnetic tunnel junctions
JG Alzate, P Khalili Amiri, G Yu, P Upadhyaya, JA Katine, J Langer, ...
Applied physics letters 104 (11), 112410, 2014
Electric-field-controlled magnetoelectric RAM: progress, challenges, and scaling
PK Amiri, JG Alzate, XQ Cai, F Ebrahimi, Q Hu, K Wong, C Grzes, H Lee, ...
IEEE Transactions on Magnetics 51 (11), 1-7, 2015
Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers
GE Rowlands, T Rahman, JA Katine, J Langer, A Lyle, H Zhao, JG Alzate, ...
Applied Physics Letters 98 (10), 102509, 2011
Voltage-induced switching of nanoscale magnetic tunnel junctions
JG Alzate, PK Amiri, P Upadhyaya, SS Cherepov, J Zhu, M Lewis, ...
2012 International Electron Devices Meeting, 29.5. 1-29.5. 4, 2012
MRAM as embedded non-volatile memory solution for 22FFL FinFET technology
O Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ...
2018 IEEE International Electron Devices Meeting (IEDM), 18.1. 1-18.1. 4, 2018
Effect of the oxide layer on current-induced spin-orbit torques in Hf|CoFeB|MgO and Hf|CoFeB|TaOx structures
M Akyol, JG Alzate, G Yu, P Upadhyaya, KL Wong, A Ekicibil, ...
Applied Physics Letters 106 (3), 032406, 2015
Current-induced spin-orbit torque switching of perpendicularly magnetized Hf|CoFeB|MgO and Hf|CoFeB|TaOx structures
M Akyol, G Yu, JG Alzate, P Upadhyaya, X Li, KL Wong, A Ekicibil, ...
Applied Physics Letters 106 (16), 162409, 2015
Design of a Fast and Low-Power Sense Amplifier and Writing Circuit for High-Speed MRAM
H Lee, JG Alzate, R Dorrance, X Cai, D Markovic, P Khalili Amiri, K Wang
IEEE Transactions on Magnetism, 2014
Diode-MTJ crossbar memory cell using voltage-induced unipolar switching for high-density MRAM
R Dorrance, JG Alzate, SS Cherepov, P Upadhyaya, IN Krivorotov, ...
IEEE Electron Device Letters 34 (6), 753-755, 2013
13.3 a 7mb stt-mram in 22ffl finfet technology with 4ns read sensing time at 0.9 v using write-verify-write scheme and offset-cancellation sensing technique
L Wei, JG Alzate, U Arslan, J Brockman, N Das, K Fischer, T Ghani, ...
2019 IEEE International Solid-State Circuits Conference-(ISSCC), 214-216, 2019
Electric-field-induced thermally assisted switching of monodomain magnetic bits
P Khalili Amiri, P Upadhyaya, JG Alzate, KL Wang
Journal of Applied Physics 113 (1), 013912, 2013
Electric field control and effect of Pd capping on magnetocrystalline anisotropy in FePd thin films: A first-principles study
PV Ong, N Kioussis, PK Amiri, JG Alzate, KL Wang, GP Carman, J Hu, ...
Physical Review B 89 (9), 094422, 2014
13.2 A 3.6Mb 10.1Mb/mm2 Embedded Non-Volatile ReRAM Macro in 22nm FinFET Technology with Adaptive Forming/Set/Reset Schemes Yielding Down to 0.5V…
P Jain, U Arslan, M Sekhar, BC Lin, L Wei, T Sahu, J Alzate-vinasco, ...
2019 IEEE International Solid-State Circuits Conference-(ISSCC), 212-214, 2019
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