| Anomalous resistance hysteresis in oxide ReRAM: Oxygen evolution and reincorporation revealed by in situ TEM D Cooper, C Baeumer, N Bernier, A Marchewka, C La Torre, ... Advanced materials 29 (23), 1700212, 2017 | 148 | 2017 |
| Strain measurement at the nanoscale: Comparison between convergent beam electron diffraction, nano-beam electron diffraction, high resolution imaging and dark field electron … A Béché, JL Rouvière, JP Barnes, D Cooper Ultramicroscopy 131, 10-23, 2013 | 131 | 2013 |
| Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE G Tourbot, C Bougerol, A Grenier, M Den Hertog, D Sam-Giao, D Cooper, ... Nanotechnology 22 (7), 075601, 2011 | 125 | 2011 |
| Improved strain precision with high spatial resolution using nanobeam precession electron diffraction JL Rouviere, A Béché, Y Martin, T Denneulin, D Cooper Applied Physics Letters 103 (24), 241913, 2013 | 111 | 2013 |
| Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope D Cooper, T Denneulin, N Bernier, A Béché, JL Rouviere Micron 80, 145-165, 2016 | 105 | 2016 |
| Strain-induced performance enhancement of trigate and omega-gate nanowire FETs scaled down to 10-nm width R Coquand, M Casse, S Barraud, D Cooper, V Maffini-Alvaro, ... IEEE transactions on electron devices 60 (2), 727-732, 2012 | 87 | 2012 |
| Vertically stacked-nanowires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain S Barraud, V Lapras, MP Samson, L Gaben, L Grenouillet, ... 2016 IEEE International Electron Devices Meeting (IEDM), 17.6. 1-17.6. 4, 2016 | 84 | 2016 |
| Mapping active dopants in single silicon nanowires using off-axis electron holography MI Den Hertog, H Schmid, D Cooper, JL Rouviere, MT Björk, H Riel, ... Nano letters 9 (11), 3837-3843, 2009 | 83 | 2009 |
| Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations C Nail, G Molas, P Blaise, G Piccolboni, B Sklenard, C Cagli, M Bernard, ... 2016 IEEE International Electron Devices Meeting (IEDM), 4.5. 1-4.5. 4, 2016 | 82 | 2016 |
| Medium resolution off-axis electron holography with millivolt sensitivity D Cooper, R Truche, P Rivallin, JM Hartmann, F Laugier, F Bertin, ... Applied Physics Letters 91 (14), 143501, 2007 | 78 | 2007 |
| Strained tunnel FETs with record ION: first demonstration of ETSOI TFETs with SiGe channel and RSD A Villalon, C Le Royer, M Cassé, D Cooper, B Prévitali, C Tabone, ... 2012 Symposium on VLSI technology (VLSIT), 49-50, 2012 | 76 | 2012 |
| Growth and structural properties of step-graded, high Sn content GeSn layers on Ge J Aubin, JM Hartmann, A Gassenq, JL Rouviere, E Robin, V Delaye, ... Semiconductor Science and Technology 32 (9), 094006, 2017 | 70 | 2017 |
| 3D analysis of advanced nano-devices using electron and atom probe tomography A Grenier, S Duguay, JP Barnes, R Serra, G Haberfehlner, D Cooper, ... Ultramicroscopy 136, 185-192, 2014 | 66 | 2014 |
| Dark field electron holography for quantitative strain measurements with nanometer-scale spatial resolution D Cooper, JP Barnes, JM Hartmann, A Béché, JL Rouviere Applied Physics Letters 95 (5), 053501, 2009 | 66 | 2009 |
| Improvement in electron holographic phase images of focused-ion-beam-milled GaAs and Si junctions by in situ annealing D Cooper, AC Twitchett, PK Somodi, PA Midgley, RE Dunin-Borkowski, ... Applied physics letters 88 (6), 063510, 2006 | 63 | 2006 |
| Dopant profiling of focused ion beam milled semiconductors using off-axis electron holography; reducing artifacts, extending detection limits and reducing the effects of … D Cooper, C Ailliot, JP Barnes, JM Hartmann, P Salles, G Benassayag, ... Ultramicroscopy 110 (5), 383-389, 2010 | 62 | 2010 |
| Dark field electron holography for strain measurement A Béché, JL Rouvière, JP Barnes, D Cooper Ultramicroscopy 111 (3), 227-238, 2011 | 61 | 2011 |
| Strain evolution during the silicidation of nanometer-scale SiGe semiconductor devices studied by dark field electron holography D Cooper, A Béché, JM Hartmann, V Carron, JL Rouvière Applied Physics Letters 96 (11), 113508, 2010 | 49 | 2010 |
| Strain mapping for the semiconductor industry by dark-field electron holography and nanobeam electron diffraction with nm resolution D Cooper, A Béché, JM Hartmann, V Carron, JL Rouvière Semiconductor science and technology 25 (9), 095012, 2010 | 44 | 2010 |
| Combining 2 nm spatial resolution and 0.02% precision for deformation mapping of semiconductor specimens in a transmission electron microscope by precession electron diffraction D Cooper, N Bernier, JL Rouvière Nano letters 15 (8), 5289-5294, 2015 | 37 | 2015 |
Armand BéchéEMATVerified email at uantwerpen.be
