Yi Tong
Yi Tong
University of Califoria, Santa Barbara / National University of Singapore / Singapore University of
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Electrical and Interfacial Characterization of Atomic Layer Deposited High-Gate Dielectrics on GaAs for Advanced CMOS Devices
GK Dalapati, Y Tong, WY Loh, HK Mun, BJ Cho
IEEE Transactions on electron devices 54 (8), 1831-1837, 2007
Investigation and manipulation of different analog behaviors of memristor as electronic synapse for neuromorphic applications
C Wang, W He, Y Tong, R Zhao
Scientific reports 6 (1), 22970, 2016
Impact of interfacial layer control using Gd2O3 in HfO2 gate dielectric on GaAs
GK Dalapati, Y Tong, WY Loh, HK Mun, BJ Cho
Applied physics letters 90 (18), 2007
Realization of artificial neuron using MXene bi-directional threshold switching memristors
Y Chen, Y Wang, Y Luo, X Liu, Y Wang, F Gao, J Xu, E Hu, S Samanta, ...
IEEE Electron Device Letters 40 (10), 1686-1689, 2019
Memristive devices with highly repeatable analog states boosted by graphene quantum dots
C Wang, W He, Y Tong, Y Zhang, K Huang, L Song, S Zhong, ...
Small 13 (20), 1603435, 2017
Resistance switching characteristics and mechanisms of MXene/SiO2 structure-based memristor
X Lian, X Shen, M Zhang, J Xu, F Gao, X Wan, E Hu, Y Guo, J Zhao, ...
Applied Physics Letters 115 (6), 2019
Selenium segregation for effective Schottky barrier height reduction in NiGe/n–Ge contacts
Y Tong, B Liu, PSY Lim, YC Yeo
IEEE electron device letters 33 (6), 773-775, 2012
Formation of new MXene film using spinning coating method with DMSO solution and its application in advanced memristive device
M Zhang, Y Wang, F Gao, Y Wang, X Shen, N He, J Zhu, Y Chen, X Wan, ...
Ceramics International 45 (15), 19467-19472, 2019
In-memory logic operations and neuromorphic computing in non-volatile random access memory
QF Ou, BS Xiong, L Yu, J Wen, L Wang, Y Tong
Materials 13 (16), 3532, 2020
Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs
L Wang, G Han, S Su, Q Zhou, Y Yang, P Guo, W Wang, Y Tong, PSY Lim, ...
Electrochemical and Solid-State Letters 15 (6), H179, 2012
Ohmic Contact Formation on N-TypeUsing Selenium or Sulfur Implant and Segregation
Y Tong, G Han, B Liu, Y Yang, L Wang, W Wang, YC Yeo
IEEE transactions on electron devices 60 (2), 746-752, 2013
Electrical Properties and Biological Synaptic Simulation of Ag/MXene/SiO2/Pt RRAM Devices
X Lian, X Shen, J Fu, Z Gao, X Wan, X Liu, E Hu, J Xu, Y Tong
Electronics 9 (12), 2098, 2020
Germanium–TinJunction Formed Using Phosphorus Ion Implant and 400Rapid Thermal Anneal
L Wang, S Su, W Wang, Y Yang, Y Tong, B Liu, P Guo, X Gong, G Zhang, ...
IEEE electron device letters 33 (11), 1529-1531, 2012
Demonstration of 2D MXene memristor: Stability, conduction mechanism, and synaptic plasticity
N He, X Liu, F Gao, Q Zhang, M Zhang, Y Wang, X Shen, X Wan, X Lian, ...
Materials Letters 266, 127413, 2020
V₂C-Based Memristor for Applications of Low Power Electronic Synapse
N He, Q Zhang, L Tao, X Chen, Q Qin, X Liu, X Lian, X Wan, E Hu, J Xu, ...
IEEE Electron Device Letters 42 (3), 319-322, 2021
Artificial Neurons Based on Ag/V2C/W Threshold Switching Memristors
Y Wang, X Chen, D Shen, M Zhang, X Chen, X Chen, W Shao, H Gu, J Xu, ...
Nanomaterials 11 (11), 2860, 2021
High-Performance Germanium-Gate MuGFET With Schottky-Barrier Nickel Germanide Source/Drain and Low-Temperature Disilane-Passivated Gate Stack
B Liu, X Gong, G Han, PSY Lim, Y Tong, Q Zhou, Y Yang, N Daval, ...
IEEE electron device letters 33 (10), 1336-1338, 2012
Degradable and dissolvable thin-film materials for the applications of new-generation environmental-friendly electronic devices
X Liu, M Shi, Y Luo, L Zhou, ZR Loh, ZJ Oon, X Lian, X Wan, FBL Chong, ...
Applied Sciences 10 (4), 1320, 2020
Manipulation of the electrical behaviors of Cu/MXene/SiO2/W memristor
Y Wang, X Liu, Y Chen, W Xu, D Liang, F Gao, M Zhang, S Samanta, ...
Applied Physics Express 12 (10), 106504, 2019
Towards an universal artificial synapse using MXene-PZT based ferroelectric memristor
M Zhang, Q Qin, X Chen, R Tang, A Han, S Yao, R Dan, Q Wang, Y Wang, ...
Ceramics International 48 (11), 16263-16272, 2022
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