Data storage: review of Heusler compounds Z Bai, LEI Shen, G Han, YP Feng Spin 2 (04), 1230006, 2012 | 107 | 2012 |
Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices K Aryana, JT Gaskins, J Nag, DA Stewart, Z Bai, S Mukhopadhyay, ... Nature communications 12 (1), 774, 2021 | 102 | 2021 |
Magnetic and transport properties of Mn3− xGa/MgO/Mn3− xGa magnetic tunnel junctions: A first-principles study Z Bai, Y Cai, L Shen, M Yang, V Ko, G Han, Y Feng Applied Physics Letters 100 (2), 2012 | 66 | 2012 |
Constructing metallic nanoroads on a MoS 2 monolayer via hydrogenation Y Cai, Z Bai, H Pan, YP Feng, BI Yakobson, YW Zhang Nanoscale 6 (3), 1691-1697, 2014 | 60 | 2014 |
Transition metal atoms pathways on rutile TiO2 (110) surface: Distribution of Ti3+ states and evidence of enhanced peripheral charge accumulation Y Cai, Z Bai, S Chintalapati, Q Zeng, YP Feng The Journal of chemical physics 138 (15), 2013 | 54 | 2013 |
Efficient spin injection into graphene through a tunnel barrier: overcoming the spin-conductance mismatch Q Wu, L Shen, Z Bai, M Zeng, M Yang, Z Huang, YP Feng Physical Review Applied 2 (4), 044008, 2014 | 53 | 2014 |
Magnetocrystalline anisotropy and its electric-field-assisted switching of Heusler-compound-based perpendicular magnetic tunnel junctions Z Bai, L Shen, Y Cai, Q Wu, M Zeng, G Han, YP Feng New Journal of Physics 16 (10), 103033, 2014 | 51 | 2014 |
Boron diffusion induced symmetry reduction and scattering in CoFeB/MgO/CoFeB magnetic tunnel junctions Z Bai, L Shen, Q Wu, M Zeng, JS Wang, G Han, YP Feng Physical Review B—Condensed Matter and Materials Physics 87 (1), 014114, 2013 | 48 | 2013 |
Transport properties of high-performance all-Heusler Co2CrSi/Cu2CrAl/Co2CrSi giant magnetoresistance device ZQ Bai, YH Lu, L Shen, V Ko, GC Han, YP Feng Journal of Applied Physics 111 (9), 2012 | 45 | 2012 |
Strain-Engineered Surface Transport in Si (001): Complete Isolation of the Surface<? format?> State via Tensile Strain M Zhou, Z Liu, Z Wang, Z Bai, Y Feng, MG Lagally, F Liu Physical Review Letters 111 (24), 246801, 2013 | 32 | 2013 |
Systematic study of ferroelectric, interfacial, oxidative, and doping effects on conductance of Pt/BaTiO/Pt ferroelectic tunnel junctions L Shen, T Zhou, Z Bai, M Zeng, JQ Goh, Z Yuan, G Han, B Liu, YP Feng Physical Review B—Condensed Matter and Materials Physics 85 (6), 064105, 2012 | 28 | 2012 |
High-performance giant-magnetoresistance junctions based on the all-Heusler architecture with matched energy bands and Fermi surfaces Z Bai, Y Cai, L Shen, G Han, Y Feng Applied Physics Letters 102 (15), 2013 | 21 | 2013 |
Stark effect and nonlinear impedance of the asymmetric Ag-CO-Ag junction: An optical rectenna HY He, ST Pi, ZQ Bai, M Banik, VA Apkarian, RQ Wu The Journal of Physical Chemistry C 120 (37), 20914-20921, 2016 | 16 | 2016 |
First-principles study of the effect of BiGa heteroantisites in GaAs: Bi alloy D Li, M Yang, S Zhao, Y Cai, Y Lu, Z Bai, Y Feng Computational materials science 63, 178-181, 2012 | 15 | 2012 |
Effect of interfacial strain on spin injection and spin polarization of Co2CrAl/NaNbO3/Co2CrAl magnetic tunneling junction Y Cai, Z Bai, M Yang, YP Feng Europhysics Letters 99 (3), 37001, 2012 | 15 | 2012 |
Phase change memory device with reduced read disturb and method of making the same M Grobis, BAI Zhaoqiang, W Parkinson US Patent 10,622,063, 2020 | 11 | 2020 |
Threshold switch for memory F Nardi, MC Wu, T Minvielle, BAI Zhaoqiang US Patent 10,943,952, 2021 | 7 | 2021 |
Phase change memory device with crystallization template and method of making the same BAI Zhaoqiang, M Apodaca, M Grobis, MNA Tran, NL Robertson, ... US Patent 10,868,245, 2020 | 7 | 2020 |
Set/reset methods for crystallization improvement in phase change memories BAI Zhaoqiang, MD Apodaca, MK Grobis, MNA Tran, NL Robertson, ... US Patent 10,839,897, 2020 | 5 | 2020 |
Heat-assisted magnetic recording (HAMR) medium with improved corrosion resistance H Yuan, PC Dorsey, F Zong, SA Pirzada, AJ Bourez, BAI Zhaoqiang US Patent 10,650,854, 2020 | 3 | 2020 |