| New High Temperature Superconducting Oxides. (La1−xSrx)2CuO4−δ and (La1−xCax)2CuO4−δ K Kishio, K Kitazawa, S Kanbe, I Yasuda, N Sugii, H Takagi, S Uchida, ... Chemistry Letters 16 (2), 429-432, 1987 | 233 | 1987 |
| Insulated-gate field-effect transistor, method of fabricating same, and semiconductor device employing same N Sugii, K Ohnishi, K Washio US Patent 6,936,875, 2005 | 157 | 2005 |
| LocalVariability and Scalability in Silicon-on-Thin-BOX (SOTB) CMOS With Small Random-Dopant Fluctuation N Sugii, R Tsuchiya, T Ishigaki, Y Morita, H Yoshimoto, S Kimura IEEE Transactions on Electron Devices 57 (4), 835-845, 2010 | 116 | 2010 |
| Performance enhancement of strained-Si MOSFETs fabricated on a chemical-mechanical-polished SiGe substrate N Sugii, D Hisamoto, K Washio, N Yokoyama, S Kimura IEEE Transactions on Electron Devices 49 (12), 2237-2243, 2002 | 110 | 2002 |
| Impact of parameter variations and random dopant fluctuations on short-channel fully depleted SOI MOSFETs with extremely thin BOX T Ohtou, N Sugii, T Hiramoto IEEE electron device letters 28 (8), 740-742, 2007 | 98 | 2007 |
| Semiconductor device, semiconductor circuit module and manufacturing method of the same K Oda, N Sugii, M Miura, I Suzumura, K Washio US Patent 7,095,043, 2006 | 98 | 2006 |
| Method of producing semiconductor device and semiconductor substrate N Sugii, S Yamaguchi, K Washio US Patent 6,723,541, 2004 | 97 | 2004 |
| Solid-phase crystallization of alloy layers S Yamaguchi, N Sugii, SK Park, K Nakagawa, M Miyao Journal of Applied Physics 89 (4), 2091-2095, 2001 | 93 | 2001 |
| Smallest Vth variability achieved by intrinsic silicon on thin BOX (SOTB) CMOS with single metal gate Y Morita, R Tsuchiya, T Ishigaki, N Sugii, T Iwamatsu, T Ipposhi, H Oda, ... 2008 Symposium on VLSI Technology, 166-167, 2008 | 90 | 2008 |
| Electro-luminescence from ultra-thin silicon S Saito, D Hisamoto, H Shimizu, H Hamamura, R Tsuchiya, Y Matsui, ... Japanese journal of applied physics 45 (7L), L679, 2006 | 89 | 2006 |
| Role of buffer layer on mobility enhancement in a strained-Si -channel metal–oxide–semiconductor field-effect transistor N Sugii, K Nakagawa, S Yamaguchi, M Miyao Applied physics letters 75 (19), 2948-2950, 1999 | 88 | 1999 |
| Thermal stability of the strained- heterostructure N Sugii Journal of Applied Physics 89 (11), 6459-6463, 2001 | 83 | 2001 |
| Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion K Kakushima, K Okamoto, M Adachi, K Tachi, P Ahmet, K Tsutsui, N Sugii, ... Solid-State Electronics 52 (9), 1280-1284, 2008 | 70 | 2008 |
| High-Tc Superconducting Oxide Solid Solutions (La1−x(Ba,Sr,Ca)x)2CuO4−δ K Kishio, K Kitazawa, N Sugii, S Kanbe, K Fueki, H Takagi, S Tanaka Chemistry Letters 16 (4), 635-638, 1987 | 67 | 1987 |
| Ultralow-voltage operation of Silicon-on-Thin-BOX (SOTB) 2Mbit SRAM down to 0.37 V utilizing adaptive back bias Y Yamamoto, H Makiyama, H Shinohara, T Iwamatsu, H Oda, ... 2013 Symposium on VLSI Circuits, T212-T213, 2013 | 62 | 2013 |
| Interface and electrical properties of La-silicate for direct contact of high-k with silicon K Kakushima, K Tachi, M Adachi, K Okamoto, S Sato, J Song, ... Solid-state electronics 54 (7), 715-719, 2010 | 62 | 2010 |
| Silicon light-emitting transistor for on-chip optical interconnection S Saito, D Hisamoto, H Shimizu, H Hamamura, R Tsuchiya, Y Matsui, ... Applied Physics Letters 89 (16), 2006 | 61 | 2006 |
| Comprehensive study on Vth variability in silicon on thin BOX (SOTB) CMOS with small random-dopant fluctuation: Finding a way to further reduce variation N Sugii, R Tsuchiya, T Ishigaki, Y Morita, H Yoshimoto, K Torii, S Kimura 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 56 | 2008 |
| EOT of 0.62 nm and high electron mobility in La-silicate/Si structure based nMOSFETs achieved by utilizing metal-inserted poly-Si stacks and annealing at high temperature T Kawanago, Y Lee, K Kakushima, P Ahmet, K Tsutsui, A Nishiyama, ... IEEE transactions on electron devices 59 (2), 269-276, 2011 | 55 | 2011 |
| Effects of low temperature annealing on the ultrathin La2O3 gate dielectric; comparison of post deposition annealing and post metallization annealing JA Ng, Y Kuroki, N Sugii, K Kakushima, SI Ohmi, K Tsutsui, T Hattori, ... Microelectronic Engineering 80, 206-209, 2005 | 55 | 2005 |
