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Antoine Descoeudres
Antoine Descoeudres
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Title
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Cited by
Year
High-efficiency silicon heterojunction solar cells: A review
S De Wolf, A Descoeudres, ZC Holman, C Ballif
green 2 (1), 7-24, 2012
10222012
Current losses at the front of silicon heterojunction solar cells
ZC Holman, A Descoeudres, L Barraud, FZ Fernandez, JP Seif, S De Wolf, ...
IEEE Journal of Photovoltaics 2 (1), 7-15, 2012
6302012
Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions
S Essig, C Allebé, T Remo, JF Geisz, MA Steiner, K Horowitz, L Barraud, ...
Nature Energy 2 (9), 1-9, 2017
5392017
Infrared light management in high-efficiency silicon heterojunction and rear-passivated solar cells
ZC Holman, M Filipič, A Descoeudres, S De Wolf, F Smole, M Topič, ...
Journal of Applied Physics 113 (1), 2013
3592013
Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment
A Descoeudres, L Barraud, S De Wolf, B Strahm, D Lachenal, C Guérin, ...
Applied Physics Letters 99 (12), 2011
3232011
Damage at hydrogenated amorphous/crystalline silicon interfaces by indium tin oxide overlayer sputtering
B Demaurex, S De Wolf, A Descoeudres, Z Charles Holman, C Ballif
Applied Physics Letters 101 (17), 2012
2772012
> 21% efficient silicon heterojunction solar cells on n-and p-type wafers compared
A Descoeudres, ZC Holman, L Barraud, S Morel, S De Wolf, C Ballif
IEEE Journal of Photovoltaics 3 (1), 83-89, 2012
2602012
Hydrogen-doped indium oxide/indium tin oxide bilayers for high-efficiency silicon heterojunction solar cells
L Barraud, ZC Holman, N Badel, P Reiss, A Descoeudres, C Battaglia, ...
Solar Energy Materials and Solar Cells 115, 151-156, 2013
2022013
Amorphous silicon oxide window layers for high-efficiency silicon heterojunction solar cells
J Peter Seif, A Descoeudres, M Filipič, F Smole, M Topič, ...
Journal of Applied Physics 115 (2), 2014
1632014
Realization of GaInP/Si dual-junction solar cells with 29.8% 1-sun efficiency
S Essig, MA Steiner, C Allebé, JF Geisz, B Paviet-Salomon, S Ward, ...
IEEE Journal of Photovoltaics 6 (4), 1012-1019, 2016
1532016
Characterization of electrical discharge machining plasmas
A Descoeudres
EPFL, 2006
1492006
Investigation of the dc vacuum breakdown mechanism
A Descoeudres, Y Levinsen, S Calatroni, M Taborelli, W Wuensch
Physical Review Special Topics-Accelerators and Beams 12 (9), 092001, 2009
1382009
Silicon heterojunction solar cells with copper-plated grid electrodes: status and comparison with silver thick-film techniques
J Geissbühler, S De Wolf, A Faes, N Badel, Q Jeangros, A Tomasi, ...
IEEE Journal of Photovoltaics 4 (4), 1055-1062, 2014
1302014
The silane depletion fraction as an indicator for the amorphous/crystalline silicon interface passivation quality
A Descoeudres, L Barraud, R Bartlome, G Choong, S De Wolf, F Zicarelli, ...
Applied Physics Letters 97 (18), 2010
1282010
Optical emission spectroscopy of electrical discharge machining plasma
A Descoeudres, C Hollenstein, R Demellayer, G Wälder
Journal of materials processing technology 149 (1), 184-190, 2004
1282004
Optical emission spectroscopy of electrical discharge machining plasma
A Descoeudres, C Hollenstein, R Demellayer, G Wälder
Journal of Physics D: Applied Physics 37 (6), 875, 2004
1282004
Record infrared internal quantum efficiency in silicon heterojunction solar cells with dielectric/metal rear reflectors
ZC Holman, A Descoeudres, S De Wolf, C Ballif
IEEE Journal of Photovoltaics 3 (4), 1243-1249, 2013
1192013
Simple processing of back-contacted silicon heterojunction solar cells using selective-area crystalline growth
A Tomasi, B Paviet-Salomon, Q Jeangros, J Haschke, G Christmann, ...
Nature Energy 2 (5), 1-8, 2017
1142017
Time-resolved imaging and spatially-resolved spectroscopy of electrical discharge machining plasma
A Descoeudres, C Hollenstein, G Wälder, R Perez
Journal of physics D: Applied physics 38 (22), 4066, 2005
1102005
Very fast light-induced degradation of a-Si: H/c-Si (100) interfaces
S De Wolf, B Demaurex, A Descoeudres, C Ballif
Physical Review B 83 (23), 233301, 2011
1042011
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