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Satoshi Shindo
Satoshi Shindo
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Cited by
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Year
Inverse Resistance Change Cr2Ge2Te6-Based PCRAM Enabling Ultralow-Energy Amorphization
S Hatayama, Y Sutou, S Shindo, Y Saito, YH Song, D Ando, J Koike
ACS applied materials & interfaces 10 (3), 2725-2734, 2018
932018
Contact resistivity of amorphous and crystalline GeCu2Te3 to W electrode for phase change random access memory
S Shindo, Y Sutou, J Koike, Y Saito, YH Song
Materials Science in Semiconductor Processing 47, 1-6, 2016
312016
Contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material showing non-bulk resistance change
Y Shuang, Y Sutou, S Hatayama, S Shindo, YH Song, D Ando, J Koike
Applied Physics Letters 112 (18), 2018
292018
Cr-Triggered Local Structural Change in Cr2Ge2Te6 Phase Change Material
S Hatayama, Y Shuang, P Fons, Y Saito, AV Kolobov, K Kobayashi, ...
ACS applied materials & interfaces 11 (46), 43320-43329, 2019
272019
Electronic Structure of Transition-Metal Based Cu2GeTe3 Phase Change Material: Revealing the Key Role of Cu d Electrons
Y Saito, Y Sutou, P Fons, S Shindo, X Kozina, JM Skelton, AV Kolobov, ...
Chemistry of Materials 29 (17), 7440-7449, 2017
262017
Understanding the fast phase-change mechanism of tetrahedrally bonded : Comprehensive analyses of electronic structure and transport phenomena
K Kobayashi, JM Skelton, Y Saito, S Shindo, M Kobata, P Fons, ...
Physical Review B 97 (19), 195105, 2018
132018
The importance of contacts in Cu2GeTe3 phase change memory devices
S Shindo, Y Shuang, S Hatayama, Y Saito, P Fons, AV Kolobov, ...
Journal of Applied Physics 128 (16), 2020
102020
Systematic materials design for phase-change memory with small density changes for high-endurance non-volatile memory applications
Y Saito, S Hatayama, Y Shuang, S Shindo, P Fons, AV Kolobov, ...
Applied Physics Express 12 (5), 051008, 2019
102019
Molybdenum oxide-base phase change resistive switching material
Y Ogawa, S Shindo, Y Sutou, J Koike
Applied Physics Letters 111 (16), 2017
92017
XAFS analysis on amorphous and crystalline new phase change material GeCu2Te3
K Kamimura, S Hosokawa, N Happo, H Ikemoto, Y Sutou, S Shindo, ...
Journal of Optoelectronics and Advanced Materials 18 (March-April 2016), 248-253, 2016
72016
XAFS Analysis of Crystal GeCu2Te3 Phase Change Material
K Kamimura, K Kimura, S Hosokawa, N Happo, H Ikemoto, Y Sutou, ...
Zeitschrift für Physikalische Chemie 230 (3), 433-443, 2016
52016
Observation of ultrafast amorphization dynamics in GeCu2Te3 thin films using echelon-based single-shot transient absorbance spectroscopy
Y Arashida, T Suzuki, S Nara, I Katayama, Y Minami, S Shindo, Y Sutou, ...
Applied Physics Letters 119 (6), 2021
32021
Investigation of bias polarity dependence of set operation in GeCu2Te3 phase change memory
JS An, KJ Kim, CM Choi, S Shindo, Y Sutou, YH Song
Electronics Letters 54 (6), 350-351, 2018
32018
Impact of contact resistance on memory window in phase-change random access memory (PCRAM)
J An, C Choi, S Shindo, Y Sutou, Y Kwon, Y Song
Journal of Computational Electronics 15, 1570-1576, 2016
32016
Effect of surface cleaning on contact resistivity of amorphous GeCu2Te3 to a W electrode
S Shindo, Y Sutou, J Koike, Y Saito, YH Song
MRS Advances 1 (39), 2731-2736, 2016
32016
Implementation of pulse timing discriminator functionality into a GeSbTe/GeCuTe double layer structure
R Akimoto, H Handa, S Shindo, Y Sutou, M Kuwahara, M Naruse, T Saiki
Optics Express 25 (22), 26825-26831, 2017
22017
Chronological change of electrical resistance in GeCu2Te3 amorphous film induced by surface oxidation
Y Saito, S Shindo, Y Sutou, J Koike
Journal of Physics D: Applied Physics 47 (47), 475302, 2014
22014
Contact resistance change memory with N-doped Cr2Ge2Te6 phase change material
YI SHUANG, Y Sutou, S Hatayama, S Shindo, S Yunheub, D Ando, ...
JSAP Annual Meetings Extended Abstracts The 66th JSAP Spring Meeting 2019 …, 2019
2019
Cr-Triggered Local Structural Change in Cr₂Ge₂Te₆ Phase Change Material
S Hatayama, Y Shuang, P Fons, Y Saito, AV Kolobov, K Kobayashi, ...
ACS applied materials & interfaces 11 (46), 2019
2019
Ge-Cu-Te Phase Change Material for Pcram Application
Y Sutou, Y Saito, S Shindo, J Koike
Electrochemical Society Meeting Abstracts 230, 1479-1479, 2016
2016
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