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Ming-Wei Lin
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Atomic Defects in Monolayer Titanium Carbide (Ti3C2Tx) MXene
X Sang, Y Xie, MW Lin, M Alhabeb, KL Van Aken, Y Gogotsi, PRC Kent, ...
ACS nano 10 (10), 9193-9200, 2016
10332016
Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating
MM Perera, MW Lin, HJ Chuang, BP Chamlagain, C Wang, X Tan, ...
ACS nano 7 (5), 4449-4458, 2013
4102013
Interlayer Coupling in Twisted WSe2/WS2 Bilayer Heterostructures Revealed by Optical Spectroscopy
K Wang, B Huang, M Tian, F Ceballos, MW Lin, M Mahjouri-Samani, ...
ACS nano 10 (7), 6612-6622, 2016
3202016
Controlled vapor phase growth of single crystalline, two-dimensional GaSe crystals with high photoresponse
X Li, MW Lin, AA Puretzky, JC Idrobo, C Ma, M Chi, M Yoon, CM Rouleau, ...
Scientific reports 4 (1), 5497, 2014
3072014
Ultrathin nanosheets of CrSiTe 3: a semiconducting two-dimensional ferromagnetic material
MW Lin, HL Zhuang, J Yan, TZ Ward, AA Puretzky, CM Rouleau, Z Gai, ...
Journal of Materials Chemistry C 4 (2), 315-322, 2016
3012016
Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy
X Li, MW Lin, J Lin, B Huang, AA Puretzky, C Ma, K Wang, W Zhou, ...
Science Advances 2 (4), e1501882, 2016
2972016
Strong spin-lattice coupling in CrSiTe3
LD Casto, AJ Clune, MO Yokosuk, JL Musfeldt, TJ Williams, HL Zhuang, ...
APL materials 3 (4), 2015
2672015
Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors
M Mahjouri-Samani, MW Lin, K Wang, AR Lupini, J Lee, L Basile, ...
Nature communications 6 (1), 7749, 2015
2602015
Method to improve planarity of electroplated copper
SW Chou, MH Tsai, MW Lin
US Patent 7,064,068, 2006
2032006
Thickness-dependent charge transport in few-layer MoS2 field-effect transistors
MW Lin, II Kravchenko, J Fowlkes, X Li, AA Puretzky, CM Rouleau, ...
Nanotechnology 27 (16), 165203, 2016
1912016
Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with polymer electrolyte
MW Lin, L Liu, Q Lan, X Tan, KS Dhindsa, P Zeng, VM Naik, MMC Cheng, ...
Journal of Physics D: Applied Physics 45 (34), 345102, 2012
1912012
Tailoring Vacancies Far Beyond Intrinsic Levels Changes the Carrier Type and Optical Response in Monolayer MoSe2−x Crystals
M Mahjouri-Samani, L Liang, A Oyedele, YS Kim, M Tian, N Cross, ...
Nano letters 16 (8), 5213-5220, 2016
1652016
Van der Waals epitaxial growth of two-dimensional single-crystalline GaSe domains on graphene
X Li, L Basile, B Huang, C Ma, J Lee, IV Vlassiouk, AA Puretzky, MW Lin, ...
ACS nano 9 (8), 8078-8088, 2015
1462015
Nanoforging Single Layer MoSe2 Through Defect Engineering with Focused Helium Ion Beams
V Iberi, L Liang, AV Ievlev, MG Stanford, MW Lin, X Li, M Mahjouri-Samani, ...
Scientific reports 6 (1), 30481, 2016
1272016
Room-temperature high on/off ratio in suspended graphene nanoribbon field-effect transistors
MW Lin, C Ling, Y Zhang, HJ Yoon, MMC Cheng, LA Agapito, N Kioussis, ...
Nanotechnology 22 (26), 265201, 2011
1182011
Full electroresistance modulation in a mixed-phase metallic alloy
ZQ Liu, L Li, Z Gai, JD Clarkson, SL Hsu, AT Wong, LS Fan, MW Lin, ...
Physical review letters 116 (9), 097203, 2016
1072016
Isoelectronic Tungsten Doping in Monolayer MoSe2 for Carrier Type Modulation
X Li, MW Lin, L Basile, SM Hus, AA Puretzky, J Lee, YC Kuo, LY Chang, ...
Advanced Materials 28 (37), 8240-8247, 2016
1062016
Beaming light from a subwavelength metal slit surrounded by dielectric surface gratings
DZ Lin, CK Chang, YC Chen, DL Yang, MW Lin, JT Yeh, JM Liu, CH Kuan, ...
Optics Express 14 (8), 3503-3511, 2006
1062006
Edge effects on the pH response of graphene nanoribbon field effect transistors
X Tan, HJ Chuang, MW Lin, Z Zhou, MMC Cheng
The Journal of Physical Chemistry C 117 (51), 27155-27160, 2013
652013
Electrically reversible cracks in an intermetallic film controlled by an electric field
ZQ Liu, JH Liu, MD Biegalski, JM Hu, SL Shang, Y Ji, JM Wang, SL Hsu, ...
Nature communications 9 (1), 41, 2018
622018
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