Olivier Thomas
Olivier Thomas
Professeur Aix Marseille Université CNRS IM2NP
Verified email at - Homepage
Cited by
Cited by
Advances, challenges and opportunities in 3D CMOS sequential integration
P Batude, M Vinet, B Previtali, C Tabone, C Xu, J Mazurier, O Weber, ...
2011 International Electron Devices Meeting, 7.3. 1-7.3. 4, 2011
Advances in 3D CMOS sequential integration
P Batude, M Vinet, A Pouydebasque, C Le Royer, B Previtali, C Tabone, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
Planar Fully depleted SOI technology: A Powerful architecture for the 20nm node and beyond
O Faynot, F Andrieu, O Weber, C Fenouillet-Béranger, P Perreau, ...
2010 International Electron Devices Meeting, 3.2. 1-3.2. 4, 2010
3D monolithic integration: Technological challenges and electrical results
M Vinet, P Batude, C Tabone, B Previtali, C LeRoyer, A Pouydebasque, ...
Microelectronic Engineering 88 (4), 331-335, 2011
CELONCEL: Effective design technique for 3-D monolithic integration targeting high performance integrated circuits
S Bobba, A Chakraborty, O Thomas, P Batude, T Ernst, O Faynot, DZ Pan, ...
16th Asia and South Pacific Design Automation Conference (ASP-DAC 2011), 336-343, 2011
UV-visible spectrophotometry of water and wastewater
O Thomas, C Burgess
Elsevier, 2017
Demonstration of low temperature 3D sequential FDSOI integration down to 50 nm gate length
P Batude, M Vinet, C Xu, B Previtali, C Tabone, C Le Royer, L Sanchez, ...
2011 Symposium on VLSI Technology-Digest of Technical Papers, 158-159, 2011
Performance analysis of 3-D monolithic integrated circuits
S Bobba, A Chakraborty, O Thomas, P Batude, VF Pavlidis, G De Micheli
2010 IEEE International 3D Systems Integration Conference (3DIC), 1-4, 2010
First-principles study of the structural, electronic, vibrational, and elastic properties of orthorhombic NiSi
D Connétable, O Thomas
Physical review B 79 (9), 094101, 2009
Circuit with transistors integrated in three dimensions and having a dynamically adjustable threshold voltage VT
P Batude, L Clavelier, MA Jaud, O Thomas, M Vinet
US Patent 8,183,630, 2012
Multi- UTBB FDSOI Device Architectures for Low-Power CMOS Circuit
JP Noel, O Thomas, MA Jaud, O Weber, T Poiroux, C Fenouillet-Beranger, ...
IEEE Transactions on Electron Devices 58 (8), 2473-2482, 2011
SRAM memory cell having transistors integrated at several levels and the threshold voltage VT of which is dynamically adjustable
O Thomas, P Batude, A Pouydebasque, M Vinet
US Patent 8,013,399, 2011
Germanium on Insulator and new 3D architectures opportunities for integration
M Vinet, C Le Royer, P Batude, JF Damlencourt, JM Hartmann, L Hutin, ...
International Journal of Nanotechnology 7 (4-8), 304-319, 2010
Interplay between anisotropic strain relaxation and uniaxial interface magnetic anisotropy in epitaxial Fe films on (001) GaAs
O Thomas, Q Shen, P Schieffer, N Tournerie, B Lépine
Physical Review Letters 90 (1), 017205, 2003
Molybdenum disilicide: Crystal growth, thermal expansion and resistivity
O Thomas, JP Senateur, R Madar, O Laborde, E Rosencher
Solid state communications 55 (7), 629-632, 1985
Electrical and optical properties of silicide single crystals and thin films
F Nava, KN Tu, O Thomas, JP Senateur, R Madar, A Borghesi, G Guizzetti, ...
Materials Science Reports 9 (4-5), 141-200, 1993
Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond
F Andrieu, O Weber, J Mazurier, O Thomas, JP Noel, ...
2010 Symposium on VLSI Technology, 57-58, 2010
Resistive memories for ultra-low-power embedded computing design
E Vianello, O Thomas, G Molas, O Turkyilmaz, N Jovanovic, D Garbin, ...
2014 IEEE International Electron Devices Meeting 6, 1-6.3, 2014
Diffusion of Sb, Ga, Ge, and (As) in TiSi2
P Gas, G Scilla, A Michel, FK LeGoues, O Thomas, FM d’Heurle
Journal of Applied Physics 63 (11), 5335-5345, 1988
Effect of Co, Pt, and Au additions on the stability and epitaxy of films on (111)Si
D Mangelinck, P Gas, JM Gay, B Pichaud, O Thomas
Journal of Applied Physics 84 (5), 2583-2590, 1998
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