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Qi Xie
Qi Xie
Principal Scientist at ASM Corporate R&D
Verified email at fudan.edu.cn
Title
Cited by
Cited by
Year
System and method for gas-phase sulfur passivation of a semiconductor surface
F Tang, ME Givens, Q Xie, P Raisanen
US Patent 9,558,931, 2017
4542017
Semiconductor structure and device and methods of forming same using selective epitaxial process
Q Xie, V Machkaoutsan, JW Maes
US Patent 9,240,412, 2016
4282016
Selective deposition of aluminum and nitrogen containing material
H Wang, Q Xie, D Longrie, JW Maes, D De Roest, J Hsieh, C Zhu, ...
US Patent 10,566,185, 2020
4212020
Method for forming metal chalcogenide thin films on a semiconductor device
F Tang, ME Givens, JH Woodruff, Q Xie, JW Maes
US Patent 9,711,396, 2017
3722017
Semiconductor structure and device formed using selective epitaxial process
Q Xie, V Machkaoutsan, JW Maes
US Patent 10,361,201, 2019
3712019
System and method for gas-phase passivation of a semiconductor surface
F Tang, ME Givens, Q Xie, P Raisanen
US Patent 9,905,492, 2018
3702018
Sulfur-containing thin films
SP Haukka, F Tang, M Givens, JW Maes, Q Xie
US Patent 9,245,742, 2016
3682016
System and method for gas-phase passivation of a semiconductor surface
F Tang, ME Givens, Q Xie, X Jiang, P Raisanen, P Calka
US Patent 9,911,676, 2018
3672018
Sulfur-containing thin films
SP Haukka, F Tang, M Givens, JW Maes, Q Xie
US Patent 9,478,419, 2016
3672016
Methods for forming a semiconductor device and related semiconductor device structures
Q Xie, ME Givens, P Raisanen, JW Maes
US Patent 10,643,904, 2020
3642020
Methods for semiconductor passivation by nitridation
Q Xie, F Tang, M Givens, P Raisanen, JW Maes
US Patent 9,711,350, 2017
3612017
Process for depositing electrode with high effective work function
V Machkaoutsan, JW Maes, Q Xie
US Patent 9,136,180, 2015
3612015
Implementing atomic layer deposition for gate dielectrics
F Tang, X Jiang, Q Xie, ME Givens, JW Maes, J Chen
US Patent App. 15/286,503, 2017
3582017
Source/drain performance through conformal solid state doping
Q Xie, D De Roest, J Woodruff, ME Givens, JW Maes, T Blanquart
US Patent 10,032,628, 2018
3572018
Method for passivating a surface of a semiconductor and related systems
X Jiang, F Tang, Q Xie, P Calka, SH Jung, ME Givens
US Patent 10,410,943, 2019
3552019
Method of forming a germanium oxynitride film
F Tang, Q Xie, JW Maes, X Jiang, ME Givens
US Patent 10,367,080, 2019
3552019
Deposition of charge trapping layers
P Calka, Q Xie, D Pierreux, B Jongbloed
US Patent 11,532,757, 2022
3542022
Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
B Zope, K Shrestha, S Swaminathan, C Zhu, HTA Jussila, Q Xie
US Patent 11,295,980, 2022
3172022
Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2O
Q Xie, YL Jiang, C Detavernier, D Deduytsche, RL Van Meirhaeghe, ...
Journal of applied physics 102 (8), 2007
3172007
Method for forming a semiconductor device structure comprising a gate fill metal
Q Xie, C Zhu, K Shrestha, P Calka, O Madia, JW Maes, ME Givens
US Patent 10,607,895, 2020
3142020
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