System and method for gas-phase sulfur passivation of a semiconductor surface F Tang, ME Givens, Q Xie, P Raisanen US Patent 9,558,931, 2017 | 454 | 2017 |
Semiconductor structure and device and methods of forming same using selective epitaxial process Q Xie, V Machkaoutsan, JW Maes US Patent 9,240,412, 2016 | 428 | 2016 |
Selective deposition of aluminum and nitrogen containing material H Wang, Q Xie, D Longrie, JW Maes, D De Roest, J Hsieh, C Zhu, ... US Patent 10,566,185, 2020 | 421 | 2020 |
Method for forming metal chalcogenide thin films on a semiconductor device F Tang, ME Givens, JH Woodruff, Q Xie, JW Maes US Patent 9,711,396, 2017 | 372 | 2017 |
Semiconductor structure and device formed using selective epitaxial process Q Xie, V Machkaoutsan, JW Maes US Patent 10,361,201, 2019 | 371 | 2019 |
System and method for gas-phase passivation of a semiconductor surface F Tang, ME Givens, Q Xie, P Raisanen US Patent 9,905,492, 2018 | 370 | 2018 |
Sulfur-containing thin films SP Haukka, F Tang, M Givens, JW Maes, Q Xie US Patent 9,245,742, 2016 | 368 | 2016 |
System and method for gas-phase passivation of a semiconductor surface F Tang, ME Givens, Q Xie, X Jiang, P Raisanen, P Calka US Patent 9,911,676, 2018 | 367 | 2018 |
Sulfur-containing thin films SP Haukka, F Tang, M Givens, JW Maes, Q Xie US Patent 9,478,419, 2016 | 367 | 2016 |
Methods for forming a semiconductor device and related semiconductor device structures Q Xie, ME Givens, P Raisanen, JW Maes US Patent 10,643,904, 2020 | 364 | 2020 |
Methods for semiconductor passivation by nitridation Q Xie, F Tang, M Givens, P Raisanen, JW Maes US Patent 9,711,350, 2017 | 361 | 2017 |
Process for depositing electrode with high effective work function V Machkaoutsan, JW Maes, Q Xie US Patent 9,136,180, 2015 | 361 | 2015 |
Implementing atomic layer deposition for gate dielectrics F Tang, X Jiang, Q Xie, ME Givens, JW Maes, J Chen US Patent App. 15/286,503, 2017 | 358 | 2017 |
Source/drain performance through conformal solid state doping Q Xie, D De Roest, J Woodruff, ME Givens, JW Maes, T Blanquart US Patent 10,032,628, 2018 | 357 | 2018 |
Method for passivating a surface of a semiconductor and related systems X Jiang, F Tang, Q Xie, P Calka, SH Jung, ME Givens US Patent 10,410,943, 2019 | 355 | 2019 |
Method of forming a germanium oxynitride film F Tang, Q Xie, JW Maes, X Jiang, ME Givens US Patent 10,367,080, 2019 | 355 | 2019 |
Deposition of charge trapping layers P Calka, Q Xie, D Pierreux, B Jongbloed US Patent 11,532,757, 2022 | 354 | 2022 |
Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures B Zope, K Shrestha, S Swaminathan, C Zhu, HTA Jussila, Q Xie US Patent 11,295,980, 2022 | 317 | 2022 |
Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2O Q Xie, YL Jiang, C Detavernier, D Deduytsche, RL Van Meirhaeghe, ... Journal of applied physics 102 (8), 2007 | 317 | 2007 |
Method for forming a semiconductor device structure comprising a gate fill metal Q Xie, C Zhu, K Shrestha, P Calka, O Madia, JW Maes, ME Givens US Patent 10,607,895, 2020 | 314 | 2020 |